Panasonic 2SD1385 Datasheet

Transistor

2SD1385

Silicon NPN triple diffusion planer type

For low-frequency output amplification

Features

■

●

High collector to base voltage V

●

High collector to emitter voltage V

●

Large collector power dissipation PC.

●

Low collector to emitter saturation voltage V

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V
V
V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

*

CBO

CEO

.

.

Ratings

400
400

5
200
100

1
150

–55 ~ +150

CE(sat)

.

Unit

V
V

V
mA
mA

W
˚C
˚C

6.9±0.1

1.5

1.5 R0.9

0.4

R0.9

R0.7

1.0±0.1

0.85

0.55±0.1 0.45±0.05

2.5 2.5

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

2.5±0.1

1.0

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

Unit: mm

1.0

4.1±0.2 4.5±0.1

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

Symbol

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

V

BE(sat)

f

T

C

ob

Conditions

IC = 100µA, IE = 0
IC = 500µA, IB = 0
IE = 100µA, IC = 0
VCE = 5V, IC = 30mA
IC = 50mA, IB = 5mA
IC = 50mA, IB = 5mA
VCB = 30V, IE = –20mA, f = 200MHz
VCB = 30V, IE = 0, f = 1MHz

min

400
400

5

30

typ40max

1.5

1.5

7

Unit

V
V
V

V
V

MHz

pF

1

Transistor

2SD1385

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

100

)
V

(

30

BE(sat)

10

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0

0 20016040 12080

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

3

1

0.1 1 10 1000.3 3 30

Ta=–25˚C

C

25˚C

75˚C

Collector current IC (mA

IC/IB=10

V

CE

120

100

)

mA

(

80

C

60

40

Collector current I

20

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

12

FE

10

8

6

4

2

Forward current transfer ratio h

0

0.1 1 10 10030. 3 20

)

25˚C

Collector current IC (mA

C

Ta=75˚C

–25˚C

Ta=25˚C

=1.0mA

I

B

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

VCE=5V

)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

)

Collector current IC (mA

60

)

50

MHz

(

T

40

30

20

10

Transition frequency f

0

– 1 –10 –100 –1000– 3 –30 –300

Emitter current IE (mA

CE(sat)

fT — I

— I

E

C

25˚C

IC/IB=10

Ta=75˚C

–25˚C

VCB=30V
Ta=25˚C

)

)

)
pF

(

Cob — V

12

10

ob

8

6

4

2

CB

Collector output capacitance C

0

10 30 100 300 1000

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)