Panasonic 2SD1350A, 2SD1350 Datasheet
Transistor
2SD1350, 2SD1350A
Silicon NPN triple diffusion planer type
For high breakdown voltage switching
Features
■
●
High collector to base voltage V
●
High collector to emitter voltage V
●
Large collector power dissipation PC.
●
Low collector to emitter saturation voltage V
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD1350
2SD1350A
2SD1350
2SD1350A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Fall time
Storage time
Symbol
2SD1350
2SD1350A
2SD1350
2SD1350A
2SD1350
2SD1350A
2SD1350
2SD1350A
2SD1350
2SD1350A
V
V
V
I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
*
CBO
Symbol
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
f
t
stg
.
.
CEO
Ratings
–55 ~ +150
.
CE(sat)
400
600
400
500
5
1
500
1
150
IC = 100µA, IE = 0
IC = 500µA, IB = 0
IE = 100µA, IC = 0
VCE = 5V, IC = 30mA
IC = 250mA, IB = 50mA
IC = 250mA, IB = 50mA
VCB = 30V, IE = –20mA, f = 200MHz
VCB = 30V, IE = 0, f = 1MHz
VCC = 200V, IC = 100mA
IB1 = 10mA, IB2 = –10mA
VCC = 200V, IC = 100mA
IB1 = 10mA, IB2 = –10mA
VCC = 200V, IC = 100mA
IB1 = 10mA, IB2 = –10mA
Unit
V
V
V
A
mA
W
˚C
˚C
Conditions
6.9±0.1
1.5
1.5 R0.9
0.4
R0.9
R0.7
1.0±0.1
0.85
0.55±0.1 0.45±0.05
2.5 2.5
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
min
400
600
400
500
5
30
*
*
2.5±0.1
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
typ
max
1.5
1.5
55
0.4
1.0
0.7
1.0
3.6
4.0
*
Pulse measurement
7
Unit: mm
1.0
1.0
4.1±0.2 4.5±0.1
Unit
V
V
V
V
V
MHz
pF
µs
µs
µs
1
Transistor
2SD1350, 2SD1350A
PC — Ta IC — V
1.6
)
1.4
W
(
C
1.2
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
0
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
BE(sat)
Ta=–25˚C
1 10 100 10003 30 300
C
IC/IB=5
25˚C
75˚C
Collector current IC (mA
V
CE
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
012108264
)
Collector to emitter voltage VCE (V
hFE — I
120
FE
100
80
60
40
20
Forward current transfer ratio h
0
1 10 100 10003 30 300
)
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
Ta=25˚C
=1.0mA
I
B
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
C
VCE=5V
)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
1 10 100 10003 30 300
)
Collector current IC (mA
60
)
50
MHz
(
T
40
30
20
10
Transition frequency f
0
– 0.001
– 0.003
Emitter current IE (A
CE(sat)
fT — I
– 0.01
— I
E
– 0.03
C
IC/IB=5
Ta=75˚C
25˚C
–25˚C
)
VCB=30V
Ta=25˚C
– 0.1 –1
– 0.3
)
)
pF
(
Cob — V
30
25
ob
20
15
10
5
CB
Collector output capacitance C
0
10 30 100 300 1000
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
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