Panasonic 2SD1350A, 2SD1350 Datasheet

Transistor

2SD1350, 2SD1350A

Silicon NPN triple diffusion planer type

For high breakdown voltage switching

Features

■

●

High collector to base voltage V

●

High collector to emitter voltage V

●

Large collector power dissipation PC.

●

Low collector to emitter saturation voltage V

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1350
2SD1350A
2SD1350

2SD1350A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

Turn-on time

Fall time

Storage time

Symbol

2SD1350
2SD1350A
2SD1350
2SD1350A

2SD1350
2SD1350A
2SD1350
2SD1350A
2SD1350
2SD1350A

V

V

V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

*

CBO

Symbol

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

V

BE(sat)

f

T

C

ob

t

on

t

f

t

stg

.

.

CEO

Ratings

–55 ~ +150

.

CE(sat)

400
600
400
500

5
1

500

1

150

IC = 100µA, IE = 0

IC = 500µA, IB = 0

IE = 100µA, IC = 0
VCE = 5V, IC = 30mA
IC = 250mA, IB = 50mA
IC = 250mA, IB = 50mA
VCB = 30V, IE = –20mA, f = 200MHz
VCB = 30V, IE = 0, f = 1MHz
VCC = 200V, IC = 100mA
IB1 = 10mA, IB2 = –10mA
VCC = 200V, IC = 100mA
IB1 = 10mA, IB2 = –10mA
VCC = 200V, IC = 100mA
IB1 = 10mA, IB2 = –10mA

Unit

V

V

V
A

mA

W
˚C
˚C

Conditions

6.9±0.1

1.5

1.5 R0.9

0.4

R0.9

R0.7

1.0±0.1

0.85

0.55±0.1 0.45±0.05

2.5 2.5

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

min

400
600
400
500

5

30

*

*

2.5±0.1

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

typ

max

1.5

1.5

55

0.4

1.0

0.7

1.0

3.6

4.0

*

Pulse measurement

7

Unit: mm

1.0

1.0

4.1±0.2 4.5±0.1

Unit

V

V

V

V
V

MHz

pF

µs

µs

µs

1

Transistor

2SD1350, 2SD1350A

PC — Ta IC — V

1.6

)

1.4

W

(

C

1.2

1.0

0.8

0.6

0.4

0.2

Collector power dissipation P

0

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

Ta=–25˚C

1 10 100 10003 30 300

C

IC/IB=5

25˚C

75˚C

Collector current IC (mA

V

CE

120

100

)

mA

(

80

C

60

40

Collector current I

20

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

120

FE

100

80

60

40

20

Forward current transfer ratio h

0

1 10 100 10003 30 300

)

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

=1.0mA

I

B

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

C

VCE=5V

)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

1 10 100 10003 30 300

)

Collector current IC (mA

60

)

50

MHz

(

T

40

30

20

10

Transition frequency f

0

– 0.001

– 0.003

Emitter current IE (A

CE(sat)

fT — I

– 0.01

— I

E

– 0.03

C

IC/IB=5

Ta=75˚C

25˚C

–25˚C

)

VCB=30V
Ta=25˚C

– 0.1 –1

– 0.3

)

)
pF

(

Cob — V

30

25

ob

20

15

10

5

CB

Collector output capacitance C

0

10 30 100 300 1000

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)