ON Semiconductor NTMFS4833N Technical data

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NTMFS4833N

l

l

Power MOSFET

30 V, 191 A, Single N−Channel, SO−8 FL

Features

• Low R

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These are Pb−Free Devices*

Applications

• CPU Power Delivery

• DC−DC Converters

• Low Side Switching

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current R
(Note 1)

Power Dissipation

(Note 1)

R

q

JA

Continuous Drain
Current R
(Note 2)

Power Dissipation

(Note 2)

R

q

JA

Continuous Drain
Current R
(Note 1)

Power Dissipation

(Note 1)

R

q

JC

Pulsed Drain
Current

Operating Junction and Storage
Temperature

Source Current (Body Diode) I
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche

Energy (T

= 35 Apk, L = 1.0 mH, RG = 25 W)

I

L

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

to Minimize Conduction Losses

DS(on)

= 25°C unless otherwise stated)

J

Parameter Symbol Value Unit

DSS

GS

TA = 25°C

q

JA

q

JA

q

JC

= 25°C, VDD = 30 V, VGS = 10 V,

J

Steady

State

TA = 85°C 19
TA = 25°C P

TA = 25°C
TA = 85°C 12
TA = 25°C P

TC = 25°C
TC = 85°C 138
TC = 25°C P

TA = 25°C,

= 10 ms

t

p

I

D

D

ID

D

I

D

D

I

DM

TJ, T

STG

S

EAS 612.5 mJ

T

L

30 V

±20 V

26

2.35 W

16

0.91 W

191

125 W

288 A

−55 to
+150

104 A

260 °C

A

A

A

°C

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V

(BR)DSS

30 V

G (4)

R

MAX ID MAX

DS(ON)

2.0 mW @ 10 V

3.0 mW @ 4.5 V

D (5,6)

S (1,2,3)

N−CHANNEL MOSFET

191 A

MARKING
DIAGRAM

D

1

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

S
S
S
G

4833N

AYWWG

G

D

ORDERING INFORMATION

Device Package Shipping

NTMFS4833NT1G SO−8 FL

(Pb−Free)

NTMFS4833NT3G SO−8 FL

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

1500/Tape & Ree

5000/Tape & Ree

D

D

†

© Semiconductor Components Industries, LLC, 2006

November, 2006 − Rev. 2

1 Publication Order Number:

NTMFS4833N/D

NTMFS4833N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

R

q

JC

R

q

JA

R

q

JA

1.0

53.2

137.8

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage

Temperature Coefficient
Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS

T

DSS

GSS

VGS = 0 V, ID = 250 mA

/

J

VGS = 0 V,

V

= 24 V

DS

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage
Negative Threshold Temperature Coefficient V
Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V to

11.5 V

VGS = 4.5 V

Forward Transconductance g

FS

VDS = 15 V, ID = 15 A 30 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Total Gate Charge Q

C

ISS
OSS
RSS

G(TOT)

G(TH)

GS
GD

G(TOT)

VGS = 0 V, f = 1 MHz, VDS = 12 V

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 11.5 V, VDS = 15 V;

ID = 30 A

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t

t

d(ON)

r

d(OFF)

f

d(ON)

r

d(OFF)

f

VGS = 4.5 V, VDS = 15 V, ID = 15 A,

= 3.0 W

R

G

VGS = 11.5 V, VDS = 15 V,

= 15 A, RG = 3.0 W

I

D

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

30 V

17

TJ = 25 °C 1

TJ = 125°C 10

1.5 2.5 V

7.12 mV/°C
ID = 30 A 1.3 2.0
ID = 15 A 1.3
ID = 30 A 2.3 3.0
ID = 15 A 2.3

5600
1200

650

39 58

6.0
16
17
88

25
34
35
17
14
19
50
10

mV/°C

mA

mW

pF

nC

nC

ns

ns

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2

NTMFS4833N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter UnitMaxTypMinTest ConditionSymbol

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q

V

SD

RR

a
b
RR

VGS = 0 V,

I

= 30 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 30 A

S

PACKAGE PARASITIC VALUES

Source Inductance
Drain Inductance L
Gate Inductance L
Gate Resistance R

L

S
D
G

G

TA = 25°C

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

TJ = 25°C − 0.8 1.0

TJ = 125°C − 0.68 −

− 38 −

− 19 −

− 19 −

− 36 − nC

− 0.50 − nH

− 0.005 − nH

− 1.84 − nH

− 1.0 −

V

ns

W

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