ON Semiconductor BDX53B, BDX54B, BDX54C, BDX53C Service Manual

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

Plastic Medium-Power Complementary Silicon Transistors

These devices are designed for general-purpose amplifier and

low-speed switching applications.

Features

•High DC Current Gain -

hFE = 2500 (Typ) @ IC = 4.0 Adc

•Collector Emitter Sustaining Voltage - @ 100 mAdc

CEO(sus)

•Low Collector-Emitter Saturation Voltage -

CE(sat)

•Monolithic Construction with Built-In Base-Emitter Shunt Resistors

•Pb-Free Packages are Available*

= 80 Vdc (Min) - BDX53B, 54B = 100 Vdc (Min) - BDX53C, 54C

= 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc

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DARLINGTON

8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80-100 VOLTS, 65 WATTS

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

BDX53B, BDX54B

BDX53C, BDX54C

Collector-Base Voltage

BDX53B, BDX54B

BDX53C, BDX54C

Emitter-Base Voltage

Collector Current - Continuous

- Peak

Base Current

Total Device Dissipation @ TC = 25°C Derate above 25°C

Operating and Storage Junction Temperature Range

Symbol

CEO

TJ, T

stg

Value

100

5.0

8.0 12

0.2

0.48

-65 to +150

Unit

Vdc

Adc

W/°C

°C

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Symbol

Max

1.92

Unit

°C/W

TO-220AB

CASE 221A

STYLE 1

MARKING DIAGRAM

& PIN ASSIGNMENT

Collector

BDX5xyG

AY WW

Base

Collector

BDX5xy = Device Code

x = 3 or 4

y = B or C A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package

3 Emitter

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 13

1 Publication Order Number:

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 6 of this data sheet.

BDX53B/D

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

TAT

4.0

3.0

2.0

, POWER DISSIPATION (WATTS)

1.0

20 40 80 100 120 160

0 60 140

T, TEMPERATURE (°C)

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0) BDX53B, BDX54B

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0) BDX53B, BDX54B (VCE = 50 Vdc, IB = 0) BDX53C, BDX54C

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0) BDX53B, BDX54B (VCB = 100 Vdc, IE = 0) BDX53C, BDX54C

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 3.0 Adc, VCE = 3.0 Vdc)

Collector-Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 12 mAdc)

Base-Emitter Saturation Voltage

(IC = 3.0 Adc, IC = 12 mA)

DYNAMIC CHARACTERISTICS

Small-Signal Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDX53B, 53C

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

= 25°C unless otherwise noted)

BDX53C, BDX54C

BDX54B, 54C

Symbol

CEO(sus)

CEO

CBO

CE(sat)

BE(sat)

Min

100

750

4.0

Max

0.5

0.2

2.0

4.0

2.5

300 200

Unit

Vdc

mAdc

Vdc

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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA

APPROX

+8.0 V

APPROX

-12 V

25 ms

tr, tf v 10 ns DUTY CYCLE = 1.0%

[ 8.0 k [ 120

+4.0 V

for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities

Figure 2. Switching Time Test Circuit

1.0

0.7 D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

r(t) EFFECTIVE TRANSIENT

0.03

0.02

THERMAL RESISTANCE (NORMALIZED)

0.01

0.2

0.1

0.05

0.02

SINGLE PULSE

0.01

0.02

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

0.03 0.3 3.0 30 300

-30 V

TUT

SCOPE

t, TIME OR PULSE WIDTH (ms)

5.0

3.0

2.0

1.0

0.7

0.5

t, TIME (s)μ

0.3

0.2 VCC = 30 V

IC/IB = 250

0.1

IB1 = I

0.07

TJ = 25°C

0.05

0.1

(pk)

DUTY CYCLE, D = t1/t

0.2 0.3 0.7 3.0 10

td @ V

0.5 2.0 7.0

= 0 V

BE(off)

1.0 5.0

IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

(t) = r(t) R

SINGLE

PULSE

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

J(pk)

= 1.92°C/W

- TC = P

(pk)

(t)

5.0

2.0

1.0

0.5

0.2 CURVES APPLY BELOW RATED V

, COLLECTOR CURRENT (AMP)

0.1

TJ = 150°C BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED

0.05

0.02

1.0

2.0 503.0 5.0 7.0

5.0 ms

1.0 ms dc

CEO

BDX53B, BDX54B

BDX53C, BDX54C

10 20 100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active-Region Safe Operating Area

Figure 4. Thermal Response

500 ms

100 ms

a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC -V limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the

30 70

limitations imposed by second breakdown.

There are two limitations on the power handling ability of

The data of Figure 5 is based on T

t 150°C. T

J(pk)

may be calculated from the data in

J(pk)

= 150°C; TC is

J(pk)

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