ON Semiconductor BC856ALT1 Technical data

BC856ALT1 Series
Preferred Devices
General Purpose Transistors
PNP Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Collector-Emitter Voltage BC856
Collector-Base Voltage BC856
Emitter−Base Voltage V Collector Current − Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature TJ, T
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
= 25°C unless otherwise noted)
A
V
V
R
R
CEO
CBO
EBO
C
P
q
P
q
D
JA
D
JA
stg
BC857
BC858, BC859
BC857
BC858, BC859
−65
−45
−30
−80
−50
−30
−5.0 V
−100 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
− 55 to +150 °C
mW
mW/°C
mW
mW/°C
V
V
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COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xx M G
G
1
xx = Device Code
xx = (Refer to page 5) M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 9
See detailed ordering and shipping information in the package
ORDERING INFORMATION
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
1
Publication Order Number:
BC856ALT1/D
BC856ALT1 Series
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage BC856 Series
(IC = −10 mA) BC857 Series
BC858, BC859 Series
Collector− Emitter Breakdown Voltage BC856 Series
(IC = −10 mA, VEB = 0) BC857A, BC857B Only
BC858, BC859 Series
Collector− Base Breakdown Voltage BC856 Series
(IC = −10 mA) BC857 Series
BC858, BC859 Series
Emitter− Base Breakdown Voltage BC856 Series
(IE = −1.0 mA) BC857 Series
BC858, BC859 Series
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain BC856A, BC857A, BC858A
(IC = −10 mA, VCE = −5.0 V) BC856B, BC857B, BC858B
BC857C, BC858C
(IC = −2.0 mA, VCE = −5.0 V) BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C
Collector− Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA)
Base− Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA)
Base− Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
BC856, BC857, BC858 Series BC859 Series
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
f
C
NF
FE
T
ob
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
125 220 420
−0.6
90 150 270
180 290 520
−0.7
−0.9
−15
−4.0
250 475 800
−0.3
−0.65
−0.75
−0.82
nA mA
100 MHz
4.5 pF
dB
10
4.0
V
V
V
V
V
V
V
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2
BC856ALT1 Series
BC857/BC858/BC859
, NORMALIZED DC CURRENT GAIN
FE
h
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
2.0
VCE = −10 V
1.5 TA = 25°C
1.0
0.7
0.5
0.3
0.2
−0.2
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
−2.0
−1.6
−1.2
−0.8
−10 mA
−0.4
−0.02 −1.0
IC = −20 mA
−0.1
IB, BASE CURRENT (mA)
TA = 25°C
IC = −200 mAIC = −50 mAIC =
IC = −100 mA
−100−20
V, VOLTAGE (VOLTS)
, TEMPERATURE COEFFICIENT (mV/ C)°θ
VB
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
1.0
1.2
1.6
2.0
2.4
2.8
TA = 25°C
V
@ IC/IB = 10
BE(sat)
V
@ VCE = −10 V
BE(on)
V
@ IC/IB = 10
CE(sat)
0
−0.2 −0.5
−1.0
−2.0 −5.0
IC, COLLECTOR CURRENT (mAdc)
−10
Figure 2. “Saturation” and “On” Voltages
−55°C to +125°C
−0.2
−1.0
IC, COLLECTOR CURRENT (mA)
−10 −100
−20 −50
−100
C, CAPACITANCE (pF)
Figure 3. Collector Saturation Region
10
C
7.0
5.0
3.0
2.0
1.0
−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40
−0.4
VR, REVERSE VOLTAGE (VOLTS)
ib
TA = 25°C
C
ob
Figure 5. Capacitances
400
300
200
150
100
80
60
40
30
20
T
f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
−0.5
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3
Figure 4. Base−Emitter Temperature Coefficient
VCE = −10 V TA = 25°C
−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current−Gain − Bandwidth Product
t
VCE = −5.0 V TA = 25°C
2.0
1.0
0.5
, DC CURRENT GAIN (NORMALIZED)
0.2
FE
h
−0.1 −1.0 −10 −200−0.2
−2.0
−5.0
IC, COLLECTOR CURRENT (mA)
−20
−50
BC856ALT1 Series
BC856
−100
−1.0
TJ = 25°C
−0.8
−0.6
−0.4
V, VOLTAGE (VOLTS)
−0.2
0
−0.2 −1.0 −10 −200
V
@ IC/IB = 10
BE(sat)
VBE @ VCE = −5.0 V
V
@ IC/IB = 10
CE(sat)
−0.5 −2.0 −5.0 −20 −50 −100
IC, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
−2.0
−1.6
IC =
−10 mA
−1.2
−0.8
−0.4
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
V
T
= 25°C
J
−0.02 −1.0 −100−20−0.1
−20 mA
−0.05 −0.2 −0.5 −2.0 −5.0
IB, BASE CURRENT (mA)
−50 mA
−100 mA
Figure 9. Collector Saturation Region
40
20
10
8.0
6.0
C, CAPACITANCE (pF)
4.0
2.0
−0.1 −0.2 −1.0 −50
−0.5 −5.0 −20
VR, REVERSE VOLTAGE (VOLTS)
C
ib
C
ob
−2.0 −10
TJ = 25°C
−200 mA
−100
Figure 8. “On” Voltage
−1.0
−1.4
−1.8
−2.2
−2.6
, TEMPERATURE COEFFICIENT (mV/ C)°θ
VB
−3.0
qVB for V
BE
−0.2 −2.0 −10 −200−1.0
−0.5 −5.0 −20 −50 −100
IC, COLLECTOR CURRENT (mA)
−55°C to 125°C
Figure 10. Base−Emitter Temperature Coefficien
VCE = −5.0 V
500
200
100
50
20
T
f, CURRENT−GAIN − BANDWIDTH PRODUCT
−1.0 −10
IC, COLLECTOR CURRENT (mA)
−100
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
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4
1.0
of n.
e
or re
k)
or
e
ns
0.7 D = 0.5
0.5
0.2
0.3
0.2
0.1
0.07
0.05
r(t), TRANSIENT THERMAL
0.03
RESISTANCE (NORMALIZED)
0.02
0.01
0.1
0.05
SINGLE PULSE
SINGLE PULSE
2.0 5.01.00.50.20.1
BC856ALT1 Series
P
(pk)
t
DUTY CYCLE, D = t1/t
20 5010 200 500100 1.0k 2.0k 5.0k 10k
t, TIME (ms)
Figure 13. Thermal Response
Z
(t) = r(t) R
q
JC
R
q
JC
Z
q
JA
R
q
1
t
2
2
JA
D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T
J(pk)
q
− TC = P
q
(pk)
JC
JA
1
R
= 83.3°C/W MAX
(t) = r(t) R
= 200°C/W MAX
(t)
q
JC
−200
−100
−50
TA = 25°C
T
J
1 s
= 25°C
3 ms
The safe operating area curves indicate IC−VCE limits the transistor that must be observed for reliable operatio Collector load lines for specific circuits must fall below th limits indicated by the applicable curve.
The data of Figure 14 is based upon T
= 150°C; TC
J(pk)
TA is variable depending upon conditions. Pulse curves a valid for duty cycles to 10% provided T may be calculated from the data in Figure 13. At high case ambient temperatures, thermal limitations will reduce th power that can be handled to values less than the limitatio imposed by the secondary breakdown.
, COLLECTOR CURRENT (mA)
−5.0
C
I
−2.0
−10
−1.0
BC558, BC559
BC557 BC556
BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
−5.0 −10 −30 −45 −65 −100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
ORDERING INFORMATION
Device Marking Package Shipping
BC856ALT1 BC856ALT1G SOT−23
BC856ALT3 SOT−23 BC856ALT3G SOT−23
BC856BLT1 BC856BLT1G SOT−23
BC856BLT3 SOT−23 BC856BLT3G SOT−23
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3A
3B
SOT−23
3,000 / Tape & Reel
(Pb−Free)
10,000 / Tape & Reel
(Pb−Free)
SOT−23
3,000 / Tape & Reel
(Pb−Free)
10,000 / Tape & Reel
(Pb−Free)
150°C. T
J(pk)
J(p
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5
BC856ALT1 Series
ORDERING INFORMATION
Device Shipping
BC857ALT1 BC857ALT1G SOT−23
BC857BLT1 BC857BLT1G SOT−23
BC857BLT3 SOT−23 BC857BLT3G SOT−23
BC857CLT1 BC857CLT1G SOT−23
BC858ALT1 BC858ALT1G SOT−23
BC858BLT1 BC858BLT1G SOT−23
BC858BLT3 BC858BLT3G SOT−23
BC858CLT1 SOT−23 BC858CLT1G SOT−23
BC858CLT3 SOT−23 BC858CLT3G SOT−23
BC859BLT1 BC859BLT1G SOT−23
BC859BLT3 SOT−23 BC859BLT3G SOT−23
BC859CLT1 BC859CLT1G SOT−23
BC859CLT3 SOT−23 BC859CLT3G SOT−23
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3E
3F
3G
3J
3K
3L
4B
4C
PackageMarking
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
(Pb−Free)
(Pb−Free)
SOT−23
(Pb−Free)
(Pb−Free)
SOT−23
(Pb−Free)
(Pb−Free)
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
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6
BC856ALT1 Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AM
D
H
SEE VIEW C
E
0.25
3
E
12
b
e
q
A
L
A1
L1
VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004
L1
H
E
STYLE 6:
PIN 1. BASE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.029
2.10 2.40 2.64 0.083 0.094 0.104
2. EMITTER
3. COLLECTOR
INCHES
NOM MAX
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
mm
ǒ
inches
Ǔ
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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BC856ALT1/D
7
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