ON Semiconductor BC847BPDW1T1 Datasheet

BC846BPDW1T1,
BC847BPDW1T1,
BC847CPDW1T1,
BC848BPDW1T1,
BC848CPDW1T1

Dual General Purpose
Transistors

NPN/PNP Duals

These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.

• Device Marking:

BC846BPDW1T1 = BB
BC847BPDW1T1 = 13F
BC847CPDW1T1 = 13G
BC848BPDW1T1 = 13K
BC848CPDW1T1 = 13L

MAXIMUM RATINGS – NPN

Rating Symbol BC846 BC847 BC848 Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current —

Continuous

CEO
CBO
EBO

I

C

65 45 30 V
80 50 30 V

6.0 6.0 5.0 V

100 100 100 mAdc

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(3)

Q

1

(4) (5) (6)

6

5

4

1

2

3

SOT–363/SC–88

CASE 419B

STYLE 1

DEVICE MARKING

(1)(2)

Q

2

MAXIMUM RATINGS – PNP

Rating Symbol BC846 BC847 BC848 Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current —

Continuous

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

Per Device
FR–5 Board
TA = 25°C
Derate Above 25°C

Thermal Resistance,

Junction to Ambient

Junction and Storage

T emperature Range

1. FR–5 = 1.0 x 0.75 x 0.062 in

 Semiconductor Components Industries, LLC, 2000

March, 2000 – Rev . 0

(1)

CEO
CBO
EBO

I

C

TJ, T

–65 –45 –30 V
–80 –50 –30 V

–5.0 –5.0 –5.0 V

–100 –100 –100 mAdc

P

D

R

q

JA

stg

380
250

3.0

328 °C/W

–55 to +150 °C

See Table

ORDERING INFORMATION

Device Package Shipping

BC846BPDW1T1 SOT–363

mW

mW/°C

1 Publication Order Number:

BC847BPDW1T1 SOT–363 3000 Units/Reel
BC847CPDW1T1 SOT–363 3000 Units/Reel
BC848BPDW1T1 SOT–363 3000 Units/Reel
BC848CPDW1T1 SOT–363 3000 Units/Reel

3000 Units/Reel

BC846BPDW1T1/D

BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

BC848CPDW1T1

ELECTRICAL CHARACTERISTICS (NPN) (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

= 10 mA) BC846 Series

(I

C

Collector–Emitter Breakdown Voltage

= 10 µA, VEB = 0) BC846 Series

(I

C

Collector–Base Breakdown Voltage

(I

= 10 mA) BC846 Series

C

Emitter–Base Breakdown Voltage

= 1.0 mA) BC846 Series

(I

E

Collector Cutoff Current (VCB = 30 V)

(V

= 30 V, TA = 150°C)

CB

ON CHARACTERISTICS

DC Current Gain

(I

= 10 µA, VCE = 5.0 V) BC846B, BC847B, BC848B

C

BC847C, BC848C

BC847 Series
BC848 Series

BC847 Series
BC848 Series

BC847 Series
BC848 Series

BC847 Series
BC848 Series

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

h

FE

65
45
30

80
50
30

80
50
30

6.0

6.0

5.0
—

—

—
—

—
—
—

—
—
—

—
—
—

—
—
—

—
—

150
270

—
—
—

—
—
—

—
—
—

—
—
—

15

5.0

—
—

V

V

V

V

nA
µA

—

= 2.0 mA, VCE = 5.0 V) BC846B, BC847B, BC848B

(I

C

BC847C, BC848C

Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector–Emitter Saturation Voltage (I

= 100 mA, IB = 5.0 mA)

C

Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base–Emitter Saturation Voltage (I

= 100 mA, IB = 5.0 mA)

C

Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base–Emitter Voltage (I

= 10 mA, VCE = 5.0 V)

C

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(I

= 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

C

Output Capacitance (VCB = 10 V, f = 1.0 MHz) C
Noise Figure (IC = 0.2 mA,

V

= 5.0 Vdc, RS = 2.0 kΩ, BC846B, BC847B, BC848B

CE

f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C

V

CE(sat)

V

BE(sat)

V

BE(on)

NF

f

T

obo

200
420

—
—

—
—

580

—

290
520

—
—

0.7

0.9

660

—

475
800

0.25

0.6
—

—

700
770

V

V

mV

100 — — MHz

— — 4.5 pF

dB
—
—

—
—

10

4.0

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2

BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

BC848CPDW1T1

ELECTRICAL CHARACTERISTICS (PNP) (T

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

= –10 mA) BC846 Series

(I

C

BC847 Series
BC848 Series

Collector–Emitter Breakdown Voltage

= –10 µA, VEB = 0) BC846 Series

(I

C

BC847 Series
BC848 Series

Collector–Base Breakdown Voltage

(I

= –10 mA) BC846 Series

C

BC847 Series
BC848 Series

Emitter–Base Breakdown Voltage

= –1.0 mA) BC846 Series

(I

E

BC847 Series
BC848 Series

Collector Cutoff Current (VCB = –30 V)

Collector Cutoff Current (V

= –30 V, TA = 150°C)

CB

ON CHARACTERISTICS

DC Current Gain

(I

= –10 µA, VCE = –5.0 V) BC846B, BC847B, BC848B

C

BC847C, BC848C

= 25°C unless otherwise noted)

A

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

h

FE

–65
–45
–30

–80
–50
–30

–80
–50
–30

–5.0
–5.0
–5.0

—
—

—
—

—
—
—

—
—
—

—
—
—

—
—
—

—
—

150
270

—
—
—

—
—
—

—
—
—

—
—
—

–15

–4.0

—
—

V

V

V

V

nA
µA

—

= –2.0 mA, VCE = –5.0 V) BC846B, BC847B, BC848B

(I

C

BC847C, BC848C

Collector–Emitter Saturation Voltage

(I

= –10 mA, IB = –0.5 mA)

C

= –100 mA, IB = –5.0 mA)

(I

C

Base–Emitter Saturation Voltage

(I

= –10 mA, IB = –0.5 mA)

C

(I

= –100 mA, IB = –5.0 mA)

C

Base–Emitter On Voltage

(I

= –2.0 mA, VCE = –5.0 V)

C

= –10 mA, VCE = –5.0 V)

(I

C

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(I

= –10 mA, VCE = –5.0 Vdc, f = 100 MHz)

C

Output Capacitance

(V

= –10 V, f = 1.0 MHz)

CB

Noise Figure

(I

= –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ,

C

f = 1.0 kHz, BW = 200 Hz)

V

CE(sat)

V

BE(sat)

V

BE(on)

C

200
420

—
—

—
—

–0.6

—

f

T

ob

100 — — MHz

— — 4.5 pF

290
520

—
—

–0.7
–0.9

—
—

475
800

–0.3

–0.65

—
—

–0.75
–0.82

NF — — 10 dB

V

V

V

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BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

2.0

1.0

h

,

I

C

C

I

V

,

C

C

I

V

V

BC848CPDW1T1

TYPICAL NPN CHARACTERISTICS

N

1.5

1.0

URRENT GA

0.8

0.6

ZED D

0.4

NORMAL

0.3

FE

0.2

0.2 0.5 1.0 10 20

2.0 5.0

IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

2.0

)

1.6

OLTAGE (

1.2

TTER

0.8

TOR–EM

OLLE

0.4

CE

0.02 1.0

IC =

10 mA

Figure 3. Collector Saturation Region

IC = 50 mA IC = 100 mA

IC =

20 mA

0.1
IB, BASE CURRENT (mA)

VCE = 10 V
T

= 25°C

A

50

IC = 200 mA

100

10020

200

TA = 25°C

0.9

V, VOLTAGE (VOLTS)

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1
0

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 10 V

BE(on)

V

@ IC/IB = 10

CE(sat)

0.2 0.5 1.0 10 20
IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

1.0
–55°C to +125°CTA = 25°C

1.2

1.6

2.0

2.4

2.8

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

0.2 1.0
IC, COLLECTOR CURRENT (mA)

10 100

Figure 4. Base–Emitter T emperature Coefficient

50

307.05.03.00.70.30.1

10070

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