ON Semiconductor BC556B, BC557A, BC558B Service Manual

BC556B, BC557A, B, C,
BC558B

Amplifier Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector - Emitter Voltage

BC556
BC557
BC558

Collector - Base Voltage

BC556
BC557

BC558
Emitter - Base Voltage V
Collector Current − Continuous

Collector Current − Peak

Base Current − Peak I
Total Device Dissipation @ TA = 25°C

Derate above 25°C
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Operating and Storage Junction

Temperature Range

V

CEO

V

CBO

EBO

I

I

CM

BM

P

P

TJ, T

C

D

D

−55 to +150 °C

stg

−65

−45

−30

−80

−50

−30

−5.0 Vdc

−100

−200

−200 mAdc
625

5.0

1.5
12

Vdc

Vdc

mAdc

mW

mW/°C

W

mW/°C

TO−92

CASE 29

STYLE 17

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COLLECTOR

1

2

BASE

3

EMITTER

1

2

3

STRAIGHT LEAD

BULK PACK

MARKING DIAGRAM

1

2

3

BENT LEAD

TAPE & REEL

AMMO PACK

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 3

R

q

JA

R

q

JC

200 °C/W

83.3 °C/W

1 Publication Order Number:

BC

55xx

AYWWG

G

xx = 6B, 7A, 7B, 7C, or 8B
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

BC556B/D

BC556B, BC557A, B, C, BC558B

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

A

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

= −2.0 mAdc, IB = 0) BC556

C

Collector−Base Breakdown Voltage

= −100 mAdc) BC556

(I

C

Emitter−Base Breakdown Voltage

= −100 mAdc, IC = 0) BC556

(I

E

Collector−Emitter Leakage Current

(V

= −40 V) BC556

CES

(V

= −20 V) BC557

CES

(V

= −20 V, TA = 125°C) BC556

CES

BC557
BC558

BC557
BC558

BC557
BC558

BC558
BC557

BC558

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CES

−65

−45

−30

−80

−50

−30

−5.0

−5.0

−5.0

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−2.0

−2.0

−2.0

−

−

−

ON CHARACTERISTICS

DC Current Gain

= −10 mAdc, VCE = −5.0 V) A Series Device

(I

C

B Series Devices
C Series Devices

(IC = −2.0 mAdc, VCE = −5.0 V) BC557

A Series Device
B Series Devices
C Series Devices

(I

= −100 mAdc, VCE = −5.0 V) A Series Device

C

B Series Devices
C Series Devices

Collector−Emitter Saturation Voltage

(I

= −10 mAdc, IB = −0.5 mAdc)

C

(I

= −10 mAdc, IB = see Note 1)

C

= −100 mAdc, IB = −5.0 mAdc)

(I

C

Base−Emitter Saturation Voltage

(I

= −10 mAdc, IB = −0.5 mAdc)

C

(IC = −100 mAdc, IB = −5.0 mAdc)

Base−Emitter On Voltage

(I

= −2.0 mAdc, VCE = −5.0 Vdc)

C

= −10 mAdc, VCE = −5.0 Vdc)

(I

C

h

V

CE(sat)

V

BE(sat)

V

BE(on)

FE

−

−

−
120
120
180
420

−

−

−

−

−

−

−

−

−0.55

−

90
150
270

−
170
290
500
120
180
300

−0.075

−0.3

−0.25

−0.7

−1.0

−0.62

−0.7

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

= −10 mA, VCE = −5.0 V, f = 100 MHz) BC556

C

Output Capacitance

(V

= −10 V, IC = 0, f = 1.0 MHz)

CB

Noise Figure

(I

= −0.2 mAdc, VCE = −5.0 V, BC556

C

= 2.0 kW, f = 1.0 kHz, Df = 200 Hz) BC557

R

S

Small−Signal Current Gain

(IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC557

A Series Device
B Series Devices
C Series Devices

BC557
BC558

BC558

C

NF

h

f

T

ob

fe

−

−

−

280
320
360

− 3.0 6.0 pF

−

−

−

125
125
240
450

2.0

2.0

2.0

−

−

−

−

1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −1 1 mAdc, VCE = −1.0 V.

−

−

−

−

−

−

−

−

−

−100

−100

−100

−4.0

−4.0

−4.0

−

−

−
800
220
460
800

−

−

−

−0.3

−0.6

−0.65

−

−

−0.7

−0.82

−

−

−

10
10
10

900
260
500
900

V

V

V

nA

mA

−

V

V

V

MHz

dB

−

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2

BC556B, BC557A, B, C, BC558B

BC557/BC558

2.0

1.5

1.0

0.7

0.5

, NORMALIZED DC CURRENT GAIN

0.3

FE

h

0.2

−2.0

−1.6

−1.2

−0.8

−0.4

, COLLECTOR−EMITTER VOLTAGE (V)

CE

V

VCE = −10 V
T

= 25°C

A

−0.2

−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1

IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

TA = 25°C

−10 mA

IC = −20 mA

−0.02 −1.0

−0.1

IB, BASE CURRENT (mA)

IC = −200 mAIC = −50 mAIC =

IC = −100 mA

−100−20

V, VOLTAGE (VOLTS)

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

−1.0

−0.9

−0.8

−0.7

−0.6

−0.5

−0.4

−0.3

−0.2

−0.1

1.0

1.2

1.6

2.0

2.4

2.8

TA = 25°C

V

@ IC/IB = 10

BE(sat)

V

@ VCE = −10 V

BE(on)

V

@ IC/IB = 10

CE(sat)

0

−0.2 −0.5

−1.0

−2.0 −5.0

IC, COLLECTOR CURRENT (mAdc)

−10

Figure 2. “Saturation” and “On” Voltages

−55°C to +125°C

−0.2

−1.0

IC, COLLECTOR CURRENT (mA)

−10 −100

−20 −50

−100

10

7.0

5.0

3.0

2.0

C, CAPACITANCE (pF)

1.0

−0.4

Figure 3. Collector Saturation Region

C

ib

TA = 25°C

C

ob

−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitances

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Figure 4. Base−Emitter Temperature Coefficient

400

300

200

150

100

80

60

40

30

20

T

f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

−0.5

−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50

IC, COLLECTOR CURRENT (mAdc)

VCE = −10 V
T

= 25°C

A

Figure 6. Current−Gain − Bandwidth Product

3