ON Semiconductor BC337-D Service Manual
BC337, BC337-25,
BC337-40
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
CEO
CBO
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
45 Vdc
50 Vdc
5.0 Vdc
800 mAdc
625
5.0
1.5
12
−55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 17
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COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 7
1 Publication Order Number:
BC33
7−xx
AYWW G
G
BC337−xx = Device Code
(Refer to page 4)
A = Assembly Location
Y = Year
WW = Work Week
G =Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
BC337/D
BC337, BC337−25, BC337−40
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector −Emitter Breakdown Voltage
(IC = 100 mA, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 10 mA, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V) BC337
(IC = 300 mA, VCE = 1.0 V)
Base−Emitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
BC337−25
BC337−40
Symbol Min Ty p Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
V
BE(on)
V
CE(sat)
C
f
FE
ob
T
45 − − Vdc
50 − − Vdc
5.0 − − Vdc
− − 100 nAdc
− − 100 nAdc
− − 100 nAdc
100
160
250
60
−
−
−
−
630
400
630
−
− − 1.2 Vdc
− − 0.7 Vdc
− 15 − pF
− 210 − MHz
−
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
THERMAL RESISTANCE
0.03
0.02
r(t), NORMALIZED EFFECTIVE TRANSIENT
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0.05
0.02
D = 0.5
0.2
0.1
0.01
SINGLE PULSE
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
qJC(t) = (t) q
JC
qJC = 100°C/W MAX
q
(t) = r(t) q
JA
JA
qJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
2
PULSE TRAIN SHOWN
READ TIME AT t
T
− TC = P
J(pk)
(pk) qJC
t, TIME (SECONDS)
Figure 1. Thermal Response
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2
1
(t)
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