BC327, BC327−16,
BC327−25, BC327−40
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector− Emitter Voltage V
Collector− Base Voltage V
Collector− Emitter Voltage V
Collector Current − Continuous I
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Operating and Storage Junction
Temperature Range
CEO
CES
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
−45 Vdc
−50 Vdc
−5.0 Vdc
−800 mAdc
625
5.0
1.5
12
−55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 17
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COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
1 Publication Order Number:
BC
xx
AYWW G
G
BCxx = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
BC327/D
BC327, BC327−16, BC327−25, BC327−40
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage
(IC = −10 mA, IB = 0)
Collector− Emitter Breakdown Voltage
(IC = −100 mA, IE = 0)
Emitter− Base Breakdown Voltage
(IE = −10 mA, IC = 0)
Collector Cutoff Current
(VCB = −30 V, IE = 0)
Collector Cutoff Current
(VCE = −45 V, VBE = 0)
Emitter Cutoff Current
(VEB = −4.0 V, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V) BC327
BC327−16
BC327−25
BC327−40
(IC = −300 mA, VCE = −1.0 V)
Base−Emitter On Voltage
(IC = −300 mA, VCE = −1.0 V)
Collector− Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = −10 V, IE = 0, f = 1.0 MHz)
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
V
BE(on)
V
CE(sat)
C
f
FE
T
−45 − −
Vdc
Vdc
−50 − −
−5.0 − − Vdc
nAdc
− − −100
nAdc
− − −100
− − −100 nAdc
−
100
100
160
250
40
−
−
−
−
−
630
250
400
630
−
− − −1.2 Vdc
− − −0.7 Vdc
ob
− 11 − pF
− 260 − MHz
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
THERMAL RESISTANCE
0.03
0.02
r(t), NORMALIZED EFFECTIVE TRANSIENT
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0.05
0.02
D = 0.5
0.2
0.1
0.01
SINGLE PULSE
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
q
(t) = (t) q
JC
q
JC
q
(t) = r(t) q
JA
q
= 375°C/W MAX
JA
D CURVES APPLY FOR
POWER
2
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
JC
= 100°C/W MAX
JA
− TC = P
1
(pk) qJC
t, TIME (SECONDS)
Figure 1. Thermal Response
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2
(t)
BC327, BC327−16, BC327−25, BC327−40
S
−1000
1.0 ms1.0 s
dc
T
= 25°C
C
−100
, COLLECTOR CURRENT (mA)
C
I
dc
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−10
(APPLIES BELOW RATED V
CEO
)
VCE, COLLECTOR−EMITTER VOLTAGE
Figure 2. Active Region − Safe Operating Area
−1.0
−0.8
−0.6
TJ = 135°C
100 ms
TJ = 25°C
IC =
−500 mA
1000
VCE = −1.0 V
TA = 25°C
100
, DC CURRENT GAIN
FE
h
−100−1.0 −3.0 −10 −30
10
−1.0
−1000−0.1 −10 −100
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
−1.0
TA = 25°C
V
@ IC/IB = 10
−0.8
−0.6
BE(sat)
V
BE(on)
@ VCE = −1.0 V
−0.4
IC = −300 mA
−0.2
, COLLECTOR−EMITTER VOLTAGE (VOLT
IC = −10 mA
CE
V
0
−0.01 −0.1 −10 −100−1.0
IC = −100 mA
IB, BASE CURRENT (mA)
Figure 4. Saturation Region
+1.0
qVC for V
CE(sat)
−0.4
V, VOLTAGE (VOLTS)
−0.2
V
@ IC/IB = 10
CE(sat)
0
−1.0 −10 −1000−100
IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
100
0
C
ib
C, CAPACITANCE (pF)
1.0
10
C
ob
−0.1 −1.0−1.0 −10 −100 −1000
−10 −100
VR, REVERSE VOLTAGE (VOLTS)
−1.0
qVB for V
−2.0
, TEMPERATURE COEFFICIENTS (mV/C)°θ
V
BE
IC, COLLECTOR CURRENT
Figure 6. Temperature Coefficients
Figure 7. Capacitances
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3
BC327, BC327−16, BC327−25, BC327−40
ORDERING INFORMATION
Device Order Number Specific Device Marking Package Type Shipping
BC327G 7 TO−92 Straight Lead
(Pb−Free)
BC327RL1G 327 TO−92 Bent Lead
(Pb−Free)
BC327−025G 327 TO−92 Straight Lead
(Pb−Free)
BC327−25RL1G 7−25 TO−92 Bent Lead
(Pb−Free)
BC327−25ZL1G 32725 TO−92 Bent Lead
(Pb−Free)
BC327−40ZL1 7−40 TO−92 Bent Lead 2000 / Tape & Ammo Box
BC327−40ZL1G 7−40 TO−92 Bent Lead
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
5000 Units / Bulk
2000 / Tape & Reel
5000 Units / Bulk
2000 / Tape & Reel
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
†
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4
BC327, BC327−16, BC327−25, BC327−40
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
SEATING
PLANE
R
T
SEATING
PLANE
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
K
XX
H
V
1
G
C
N
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
MILLIMETERSINCHES
N
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
K
XX
G
D
J
V
1
C
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 −−−
N 2.04 2.66
P 1.50 4.00
R 2.93 −−−
V 3.43 −−−
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BC327/D
5
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