ON Semiconductor BC327-D Service Manual

BC327, BC327−16,
BC327−25, BC327−40

Amplifier Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector− Emitter Voltage V
Collector− Base Voltage V
Collector− Emitter Voltage V
Collector Current − Continuous I
Total Power Dissipation @ TA = 25°C

Derate above TA = 25°C

Total Power Dissipation @ TA = 25°C

Derate above TA = 25°C

Operating and Storage Junction
Temperature Range

CEO
CES
EBO

P

P

TJ, T

C

D

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

R

q

JA

R

q

JC

−45 Vdc

−50 Vdc

−5.0 Vdc

−800 mAdc
625

5.0

1.5
12

−55 to +150 °C

200 °C/W

83.3 °C/W

mW

mW/°C

W

mW/°C

TO−92

CASE 29

STYLE 17

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COLLECTOR

1

2

BASE

3

EMITTER

1

2

3

STRAIGHT LEAD

BULK PACK

MARKING DIAGRAM

1

2

3

BENT LEAD

TAPE & REEL

AMMO PACK

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 5

1 Publication Order Number:

BC

xx

AYWW G

G

BCxx = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.

BC327/D

BC327, BC327−16, BC327−25, BC327−40

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector− Emitter Breakdown Voltage

(IC = −10 mA, IB = 0)

Collector− Emitter Breakdown Voltage

(IC = −100 mA, IE = 0)

Emitter− Base Breakdown Voltage

(IE = −10 mA, IC = 0)

Collector Cutoff Current

(VCB = −30 V, IE = 0)

Collector Cutoff Current

(VCE = −45 V, VBE = 0)

Emitter Cutoff Current

(VEB = −4.0 V, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(IC = −100 mA, VCE = −1.0 V) BC327

BC327−16
BC327−25
BC327−40

(IC = −300 mA, VCE = −1.0 V)

Base−Emitter On Voltage

(IC = −300 mA, VCE = −1.0 V)

Collector− Emitter Saturation Voltage

(IC = −500 mA, IB = −50 mA)

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = −10 V, IE = 0, f = 1.0 MHz)

Current−Gain − Bandwidth Product

(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)

V

(BR)CEO

V

(BR)CES

V

(BR)EBO

I

CBO

I

CES

I

EBO

h

V

BE(on)

V

CE(sat)

C

f

FE

T

−45 − −

Vdc

Vdc

−50 − −

−5.0 − − Vdc

nAdc

− − −100
nAdc

− − −100

− − −100 nAdc

−
100
100
160
250

40

−

−

−

−

−

630
250
400
630

−

− − −1.2 Vdc

− − −0.7 Vdc

ob

− 11 − pF

− 260 − MHz

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

THERMAL RESISTANCE

0.03

0.02

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.01

0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

0.05

0.02

D = 0.5

0.2

0.1

0.01

SINGLE PULSE

SINGLE PULSE

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

q

(t) = (t) q

JC

q

JC

q

(t) = r(t) q

JA

q

= 375°C/W MAX

JA

D CURVES APPLY FOR
POWER

2

PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

JC

= 100°C/W MAX

JA

− TC = P

1

(pk) qJC

t, TIME (SECONDS)

Figure 1. Thermal Response

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2

(t)