ON Semiconductor 2N5401-D Service Manual
2N5401
Preferred Device
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter V oltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
CEO
CBO
EBO
P
P
TJ, T
C
D
D
stg
150 Vdc
160 Vdc
5.0 Vdc
600 mAdc
625
5.0
1.5
12
−55 to +150 °C
mW
mW/°C
W
mW/°C
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COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R
Thermal Resistance, Junction−to−Case R
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
q
JA
q
JC
200 °C/W
83.3 °C/W
1
2
3
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
5401
AYWWG
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 2
1 Publication Order Number:
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
ORDERING INFORMATION
2N5401/D
2N5401
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(sat)
f
C
obo
h
NF
FE
150 −
Vdc
160
Vdc
−
Vdc
5.0 −
−
−
50
50
nAdc
− 50
−
50
60
50
−
240
−
Vdc
−
−
0.2
0.5
Vdc
−
−
T
100 300
1.0
1.0
MHz
pF
− 6.0
fe
40 200
−
dB
− 8.0
ORDERING INFORMATION
Device Package Shipping
2N5401G TO−92
5000 Unit / Bulk
(Pb−Free)
2N5401RLRAG TO−92
2000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
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2
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