ON Semiconductor 2N5302-D Service Manual
2N5302
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High−Power NPN Silicon
Transistor
High−power NPN silicon transistors are for use in power amplifier
and switching circuits applications.
Features
• Low Collector−Emitter Saturation Voltage −
V
= 0.75 Vdc (Max) @ IC = 10 Adc
CE(sat)
• Pb−Free Package is Available*
MAXIMUM RATINGS (Note 1) (T
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Collector Current − Continuous (Note 2)
Base Current
Total Device Dissipation @ TC = 25_C
ООООООООО
Derate above 25_C
Operating and Storage Junction
Temperature Range
ООООООООО
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Case−to−Ambient
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
= 25°C unless otherwise noted)
J
Symbol
V
CEO
V
CB
I
C
I
B
P
D
ÎÎ
TJ, T
ÎÎ
Symbol
q
JC
q
CA
stg
Value
60
60
30
7.5
200
ÎÎ
1.14
–65 to +200
ÎÎ
Max
0.875
34
Unit
Î
W/_C
Î
Unit
_C/W
_C/W
Vdc
Vdc
Adc
Adc
W
_C
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30 AMPERES
POWER TRANSISTOR
NPN SILICON
60 VOLTS, 200 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
T
T
C
A
200
8.0
150
6.0
4.0
2.0
, POWER DISSIPATION (WATTS)
D
P
100
50
0
0
0 20 40 60 80 100 120 140 160 180 200
T
C
T
A
TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006− Rev. 2
2N5302G
AYYWW
MEX
2N5302 = Device Code
G = Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Origin
ORDERING INFORMATION
Device Package Shipping
2N5302 TO−204 100 Units/Tray
2N5302G TO−204
(Pb−Free)
1 Publication Order Number:
100 Units/Tray
2N5302/D
2N5302
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ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector−Emitter Sustaining Voltage (Note 4)
(IC = 200 mAdc, IB = 0)
ООООООООООООООООООО
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
ООООООООООООООООООО
(VCE = 60 Vdc, V
EB(off)
= 1.5 Vdc)
Collector Cutoff Current
(VCE = 60 Vdc, V
ООООООООООООООООООО
= 1.5 Vdc, TC = 150_C)
EB(off)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 4)
*(IC = 1.0 Adc, VCE = 2.0 Vdc)
ООООООООООООООООООО
*(IC = 15 Adc, VCE = 2.0 Vdc)
*(IC = 30 Adc, VCE = 4.0 Vdc)
ООООООООООООООООООО
*Collector−Emitter Saturation Voltage (Note 4)
(IC = 10 Adc, IB = 1.0 Adc)
ООООООООООООООООООО
(IC = 20 Adc, IB = 2.0 Adc)2
(IC = 30 Adc, IB = 6.0 Adc)
ООООООООООООООООООО
*Base Emitter Saturation Voltage (Note 4)
(IC = 10 Adc, IB = 1.0 Adc)
ООООООООООООООООООО
(IC = 15 Adc, IB = 1.5 Adc)
(IC = 20 Adc, IB = 2.0 Adc)
ООООООООООООООООООО
*Base−Emitter On Voltage (Note 4)
(IC = 15 Adc, VCE = 2.0 Vdc)
(IC = 30 Adc, VCE = 4.0 Vdc)
ООООООООООООООООООО
DYNAMIC CHARACTERISTICS (Note 3)
Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Small−Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS (Note 3)
Rise Time
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
ООООООООООООООО
ООООООООООООООО
3. Indicates JEDEC Registered Data.
4. Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
V
CEO(sus)
ÎÎÎ
I
CEO
I
CEX
ÎÎÎ
I
CEX
ÎÎÎ
I
CBO
I
EBO
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
ÎÎÎ
ÎÎÎ
V
BE(sat)
ÎÎÎ
ÎÎÎ
V
BE(on)
ÎÎÎ
f
T
h
fe
t
r
t
s
t
f
Min
60
ÎÎ
−
ÎÎ
−
−
ÎÎ
−
−
40
ÎÎ
15
ÎÎ
5.0
−
ÎÎ
−
−
ÎÎ
−
ÎÎ
−
−
ÎÎ
−
−
ÎÎ
2.0
40
Max
Unit
Vdc
−
Î
ÎÎ
mAdc
5.0
mAdc
Î
1.0
ÎÎ
mAdc
10
Î
ÎÎ
mAdc
1.0
5.0
mAdc
−
−
Î
Î
60
ÎÎ
ÎÎ
−
Vdc
0.75
Î
Î
2.0
3.0
ÎÎ
ÎÎ
Vdc
1.7
Î
Î
1.8
2.5
ÎÎ
ÎÎ
Vdc
1.7
3.0
Î
−
−
−
ÎÎ
−
−
1.0
2.0
1.0
MHz
−
ms
ms
ms
+11 V
−2.0 V
INPUT PULSE
tr ≤ 20 ns
PW = 10 to 100 ms
DUTY CYCLE = 2.0%
Figure 2. Turn−On time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
V
CC
+30 V
3.0
10
TO
SCOPE
tr ≤ 20 ns
+11 V
−9.0 V
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2
INPUT PULSE
tr ≤ 20 ns
PW = 10 to 100 ms
DUTY CYCLE = 2.0%
0
10
D
VBB = 7.0 V
Figure 3. Turn−Off time
V
CC
+30 V
3.0
TO
SCOPE
tr ≤ 20 ns
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