OMNIREL OM60L60SB, OM50F60SB, OM45L120SB, OM35F120SB Datasheet
3.1 - 63
3.1
4 11 R0
High Current, High Voltage 600V And 1200V,
Up To 75 Amp IGBTs With FRED Diodes
FEATURES
• Includes Internal FRED Diode
• Rugged Package Design
• Solder Terminals
• Very Low Saturation Voltage
• Fast Switching, Low Drive Current
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced IGBT
technology combined with a package designed specifically for high efficiency, high
current applications. They are ideally suited for Hi-Rel requirements where small
size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
GENERAL CHARACTERISTICS
@ 25°C
SCHEMATIC MECHANICAL OUTLINE
OM45L120SB
OM35F120SB
OM60L60SB
OM50F60SB
C
E
G
.563
.125
TERMINAL 1
.472
2.000
.813
.125 DIA.
4 PLCS.
.166 DIA.
3 PLCS.
.250
2 PLCS.
1.500
.324
.375
±.010
.275
±.010
.375
.875
1.375
1.750
±.010
.510
.030
.515
MAX.
.050
CEG
IGBTS IN HERMETIC ISOLATED POWER
BLOCK PACKAGES
Preliminary Data Sheet
Part V
CE
I
C
Number (V) (A)
V
CE(sat)
Type
OM60L60SB 600 75 1.8 Volts Lo Sat.
OM45L120SB 1200 70 3 Volts Lo Sat.
OM50F60SB 600 75 2.7 Volts Hi Speed
OM35F120SB 1200 70 4 Volts Hi Speed
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
OM60L60SB OM45L120SB OM50F60SB OM35F120SB
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Parameters 60L60SB 45L120SB 50F60SB 35F120SB Units
V
CES
Drain Source Voltage 600 1200 600 1200 V
V
CGR
Drain Gate Voltage (RGS= 1.0 M ) 600 1200 600 1200 V
IC@ TC= 25°C Continuous Drain Current 75 70 75 70 A
IC@ TC= 90°C Continuous Drain Current 60 45 50 35 A
ICPulsed Pulsed Drain Current
1
200 180 200 140 A
PD@ TC= 25°C Max. Power Dissipation 250 250 250 250 W
PD@ TC= 100°C Max. Power Dissipation 100 100 100 100 W
Junction-To-Case Linear Derating Factor 2 2 2 2 W/°C
Junction-To-Ambient Linear Derating Factor .033 .033 .033 .033 W/°C
Tj, T
stg
Operating And Storage Temperature Range -55 to +150 -55 to +150 -55 to +150 -55 to +150 °C
Lead Temperature (1/16" from case for 10 sec.) 230 230 230 230 °C
R
thJC
Thermal Resistance (Junction-To-Case) 0.5 0.5 0.5 0.5 °C/W
R
thJA
Thermal Resistance (Junction-To-Ambient) 30 30 30 30 °C/W
Note: 1. Pulse Test: Pulse Width 300 µsec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS
(TC= 25°C unless otherwise noted)
Characteristic Test Condition Symbol Part No. Min. Max. Units
Gate Threshold Voltage VCE= VGE, ID= 250µA V
GE(th)
All 2.5 5.0 V
Gate-Emitter Leakage Current VGE= ±20 V
DC
I
GES
All ±100 nA
Off State VCE= V
DSS
x 0.8 TC= 25°C I
CES
All 200 µA
Collector-Emitter Leakage VGS= 0V TC= 125°C I
CES
All 1 mA
60L60SB 600
Collector-Emitter
V
GE
= 0V, IC= 250 µA V
CES
45L120SB 1200
Breakdown Voltage 50F60SB 600
35F120SB 1200
V
60L60SB 1.8
45L120SB 3.0
Static Collector-Emitter Voltage V
GE
= 15V, IC= I
C(100)
x 0.5 V
CE(sat)
50F60SB 2.7
35F120SB 4.0
The above data is preliminary.
Please contact factory for additional data and the dynamic and switching characteristics.
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