OKI MSM514260E-60JS, MSM514260E-60TS-K, MSM514260E-70JS, MSM514260E-70TS-K Datasheet
Semiconductor
This version:Aug.2000
MSM514260E
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM514260E is a 262,144-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology.
The MSM514260E achieves high integration, high-speed operation, and low-power consumption because Oki
manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM514260E
is available in a 40-pin plastic SOJ, 44/40-pin plastic TSOP.
FEATURES
• 262,144-word × 16-bit configuration
• Single 5V power supply, ±10% tolerance
• Input : TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 512 cycles/8 ms
• Fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Package options:
40-pin 400mil plastic SOJ (SOJ40-P-400-1.27) (Product : MSM514260E-xxJS)
44/40-pin 400mil plastic TSOP (TSOPII44/40-P-400-0.80-K) (Product : MSM514260E-xxTS-K)
xx : indicates speed rank.
PRODUCT FAMILY
Family
MSM514260E
Access Time (Max.) Power Dissipation
t
RAC
60ns 30ns 15ns 15ns 110ns 633mW
70ns 35ns 20ns 20ns 130ns 578mW
t
AA
t
CAC
t
OEA
Cycle Time
(Min.)
Operating (Max.) Standby (Max.)
5.5mW
1/14
PIN CONFIGRATION (TOP VIEW)
40-Pin Plastic SOJ
(K Type)
WE
WE
MSM514260E
1
V
CC
2
DQ1
3
DQ2
4
DQ3
5
DQ4
6
V
CC
7
DQ5
8
DQ6
9
DQ7
10
DQ8
11
NC
12
NC
13
14
RAS
15
NC
16
A0
17
A1
18
A2
19
A3
20 21
V
CC
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
V
SS
DQ16
DQ15
DQ14
DQ13
V
SS
DQ12
DQ11
DQ10
DQ9
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
V
SS
1
V
CC
2
DQ1
3
DQ2
4
DQ3
5
DQ4
6
V
CC
7
DQ5
8
DQ6
9
DQ7
10
DQ8
NC1413
NC
15
16
RAS
17
NC
18
A0
19
A1
20
A2
21
A3
22 23
V
CC
44/40-Pin Plastic TSOP
44
43
42
41
40
39
38
37
36
35
32
31
30
28
27
26
25
24
V
SS
DQ16
DQ15
DQ14
DQ13
V
SS
DQ12
DQ11
DQ10
DQ9
NC
LCAS
UCAS
OE29
A8
A7
A6
A5
A4
V
SS
Pin Name Function
A0 − A8
RAS
LCAS
UCAS
Lower Byte Column Address Strobe
Upper Byte Column Address Strobe
Address Input
Row Address Strobe
DQ1 - DQ16 Data Input/Data Output
OE
WE
V
V
CC
SS
Output Enable
Write Enable
Power Supply (5V)
Ground (0V)
NC No Connection
Note : The same power supply voltage must be provided to every VCC pin, and the same
GND voltage level must be provided to every VSS pin.
2/14
BLOCK DIAGRAM
A0 - A8
8888888168
16
999
9
Column
Internal
Counter
Row
Buffers
DQ1 - DQ8
DQ9 - DQ16
OEWERAS
LCAS
UCAS
VCCV
Timing
Generator
I/O
Controller
I/O
Controller
MSM514260E
Output
Buffers
Address
Buffers
Address
Address
SS
FUNCTION TABLE
Input Pin DQ Pin
RAS LCAS UCAS WE OE
Refresh
Control Clock
Row
Deco-
ders
On Chip
VBB Generator
Word
Drivers
Column Decoders
Sense Amplifiers
Memory
Cells
I/O
Selector
DQ1-DQ8 DQ9-DQ16
Input
Buffers
Input
Buffers
Output
Buffers
Function Mode
H * * * * High-Z High-Z Standby
L H H * * High-Z High-Z Refresh
L L H H L
L H L H L High-Z
L L L H L
L L H L H
L H L L H Don’t Care
L L L L H
D
D
OUT
OUT
D
D
IN
IN
High-Z Lower Byte Read
D
D
OUT
OUT
Upper Byte Read
Word Read
Don’t Care Lower Byte Write
D
IN
D
IN
Upper Byte Write
Word Write
L L L H H High-Z High-Z
* : “H” or “L”
3/14
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter Symbol Rating Unit
MSM514260E
Voltage on Any Pin Relative to V
Voltage VCC supply Relative to V
SS
SS
VIN, V
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
*: Ta = 25°C
Recommended Operating Conditions
Parameter Symbol Min. Typ. Max. Unit
V
Power Supply Voltage
Input High Voltage
Input Low Voltage
V
V
V
CC
SS
IH
IL
OUT
V
CC
I
OS
P
D*
T
opr
T
stg
−0.5 to VCC + 0.5
−0.5 to 7.0
50 mA
1 W
0 to 70 °C
−55 to 150
(Ta = 0°C to 70°C)
4.5 5.0 5.5 V
0 0 0 V
2.4
−0.5
*2
V
CC
*1
+ 0.5
0.8 V
V
V
°C
V
Notes: *1. The input voltage is VCC + 2.0V when the pulse width is less than 20ns (the pulse width is with
respect to the point at which VCC is applied).
*2. The input voltage is VSS − 2.0V when the pulse width is less than 20ns (the pulse width respect to
the point at which VSS is applied).
Capacitance
(VCC = 5V ± 10%, Ta = 25°C, f=1MHz)
Parameter Symbol Typ. Max. Unit
Input Capacitance (A0 – A8)
Input Capacitance
(RAS, LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 – DQ16)
C
C
C
IN1
IN2
I/O
5 pF
7 pF
7 pF
4/14
DC Characteristics
MSM514260E
(VCC = 5V ± 10%, Ta = 0°C to 70°C)
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Average Power Supply Current
(Operating)
Power Supply Current
(Standby)
Average Power Supply Current
(RAS-only Refresh)
Symbol
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
Condition
IOH = −5.0mA
IOL = 4.2mA
0V ≤ VI ≤ 6.5V ;
All other pins not
under test = 0V
DQ disable
0V ≤ VO ≤ VCC
RAS, CAS cycling,
tRC = Min.
RAS, CAS = V
IH
RAS, CAS ≥
VCC – 0.2V
RAS cycling,
CAS = VIH,
tRC = Min.
MSM514260
E-60
Min.
Max
2.4 V
CC
MSM514260
E-70
Min.
2.4 V
Max
CC
0 0.4 0 0.4 V
−10
−10
10
10
115
2
1
115
−10
−10
10
10
105 mA 1,2
2
1
105 mA 1,2
Unit Note
V
µA
µA
mA 1
Power Supply Current
(Standby)
I
CC5
CAS = VIL,
DQ = enable
RAS = VIH,
Average Power Supply Current
(CAS before RAS Refresh)
I
CC6
RAS = cycling,
CAS before RAS
RAS = VIL,
Average Power Supply Current
(Fast Page Mode)
I
CC7
CAS cycling,
tPC = Min.
Notes: 1. ICC Max. is specified as ICC for output open condition.
2. The address can be changed once or less while RAS = VIL.
3. The address can be changed once or less while CAS = VIH.
5
115
115
5 mA 1
105 mA 1,2
105 mA 1,3
5/14
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