NXP PDZ10B, PDZ11B, PDZ12B, PDZ13B, PDZ15B Schematic [ru]

DATA SH EET

DISCRETE SEMICONDUCTORS

PDZ-B series

Voltage regulator diodes

Product data sheet
Supersedes data of 2002 Feb 18

2004 Mar 22

NXP Semiconductors Product data sheet

Top view

Voltage regulator diodes PDZ-B series

FEATURES

• Total power dissipation: max. 400 mW

• Small plastic package suitable for surface mounted

design

PINNING

PIN DESCRIPTION

1 cathode
2 anode

• Wide variety of voltage ranges: nominal 2.4 to 36 V
range)

(E24

• Tolerance approximately ±2%.

handbook, halfpage

12

APPLICATIONS

• General voltage regulation.

The marking bar indicates the cathode.

MAM387

DESCRIPTION

Fig.1 Simplified outline (SOD323; SC-76) and

Low-power general purpose voltage regulator diodes in a

symbol.

small plastic SMD SOD323 (SC-76) package.

MARKING

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

PDZ2.4B Z0 PDZ5.1B Z8 PDZ11B ZG PDZ24B ZQ
PDZ2.7B Z1 PDZ5.6B Z9 PDZ12B ZH PDZ27B ZR
PDZ3.0B Z2 PDZ6.2B ZA PDZ13B ZJ PDZ30B ZS
PDZ3.3B Z3 PDZ6.8B ZB PDZ15B ZK PDZ33B ZT
PDZ3.6B Z4 PDZ7.5B ZC PDZ16B ZL PDZ36B ZU
PDZ3.9B Z5 PDZ8.2B ZD PDZ18B ZM
PDZ4.3B Z6 PDZ9.1B ZE PDZ20B ZN
PDZ4.7B Z7 PDZ10B ZF PDZ22B ZP

MARKING

CODE

ORDERING INFORMATION

TYPE

NUMBER

PDZ2.4B to

NAME DESCRIPTION VERSION

− plastic surface mounted package; 2 leads SOD323

PACKAGE

PDZ36B

2004 Mar 22 2

NXP Semiconductors Product data sheet

Voltage regulator diodes PDZ-B series

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

F

I

ZSM

P

tot

T

stg

T

j

Note

1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.

THERMAL CHARACTERISTICS

continuous forward current − 200 mA
non-repetitive peak reverse current tp = 100 μs; square wave;

T

= 25 °C prior to surge

amb

total power dissipation T

= 25 °C; note 1;

amb

− 400 mW

see Table 2

see Fig.2
storage temperature −65 +150 °C
junction temperature − 150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th(j-s)
th(j-a)

thermal resistance from junction to soldering point 130 K/W
thermal resistance from junction to ambient note 1 340 K/W

Note

1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.

2004 Mar 22 3

NXP Semiconductors Product data sheet

Voltage regulator diodes PDZ-B series

CHARACTERISTICS
Table 1 Total series

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

I

R

forward voltage IF = 10 mA; see Fig.3 0.9 V

IF = 100 mA; see Fig.3 1.1 V
reverse current

PDZ2.4B VR = 1 V 50 μA
PDZ2.7B VR = 1 V 20 μA
PDZ3.0B VR = 1 V 10 μA
PDZ3.3B VR = 1 V 5 μA
PDZ3.6B VR = 1 V 5 μA
PDZ3.9B VR = 1 V 3 μA
PDZ4.3B VR = 1 V 3 μA
PDZ4.7B VR = 1 V 2 μA
PDZ5.1B VR = 1.5 V 2 μA
PDZ5.6B VR = 2.5 V 1 μA
PDZ6.2B VR = 3 V 500 nA
PDZ6.8B VR = 3.5 V 500 nA
PDZ7.5B VR = 4 V 500 nA
PDZ8.2B VR = 5 V 500 nA
PDZ9.1B VR = 6 V 500 nA
PDZ10B VR = 7 V 100 nA
PDZ11B VR = 8 V 100 nA
PDZ12B VR = 9 V 100 nA
PDZ13B VR = 10 V 100 nA
PDZ15B VR = 11 V 50 nA
PDZ16B VR = 12 V 50 nA
PDZ18B VR = 13 V 50 nA
PDZ20B VR = 15 V 50 nA
PDZ22B VR = 17 V 50 nA
PDZ24B VR = 19 V 50 nA
PDZ27B VR = 21 V 50 nA
PDZ30B VR = 23 V 50 nA
PDZ33B VR = 25 V 50 nA
PDZ36B VR = 27 V 50 nA

2004 Mar 22 4

2004 Mar 22 5

Table 2 Per type
Tj = 25 °C unless otherwise specified.

NXP Semiconductors Product data sheet

Voltage regulator diodes PDZ-B series

TYPE

NUMBER

WORKING VOLTAGE

(V)

V

Z

IZ = 5 mA

at

MIN. MAX. MAX.

DIFFERENTIAL RESISTANCE

r

(Ω)

dif

at IZ

(mA)

MAX.

at IZ

(mA)

TEMP. COEFF.

(mV/K)

S

Z

at

IZ = 5 mA

(see Figs 4 and 5)

TYP. MAX. MAX.

DIODE CAP.

(pF) at

C

d

f

= 1 MHz;

= 0

V

R

NON-REPETITIVE PEAK

REVERSE CURRENT

(A) at tp = 100 μs;

I

ZSM

= 25 °C

T

amb

PDZ2.4B 2.43 2.63 1 000 0.5 100 5 −1.6 450 8.0
PDZ2.7B 2.69 2.91 1 000 0.5 100 5 −2.0 440 8.0
PDZ3.0B 2.85 3.07 1 000 0.5 95 5 −2.1 425 8.0
PDZ3.3B 3.32 3.53 1 000 0.5 95 5 −2.4 410 8.0
PDZ3.6B 3.60 3.85 500 1.0 90 5 −2.4 390 8.0
PDZ3.9B 3.89 4.16 500 1.0 90 5 −2.5 370 8.0
PDZ4.3B 4.17 4.48 600 1.0 90 5 −2.5 350 8.0
PDZ4.7B 4.55 4.75 600 1.0 90 5 −1.4 325 8.0
PDZ5.1B 4.96 5.20 250 0.5 60 5 0.3 300 5.5
PDZ5.6B 5.48 5.73 100 0.5 50 5 1.9 275 5.5
PDZ6.2B 6.06 6.33 80 0.5 50 5 2.7 250 5.5
PDZ6.8B 6.65 6.93 60 0.5 40 5 3.4 215 5.5
PDZ7.5B 7.28 7.60 60 0.5 10 5 4.0 170 3.5
PDZ8.2B 8.02 8.36 60 0.5 10 5 4.6 150 3.5
PDZ9.1B 8.85 9.23 60 0.5 10 5 5.5 120 3.5
PDZ10B 9.77 10.21 60 0.5 10 5 6.4 110 3.5
PDZ11B 10.78 11.22 60 0.5 10 5 7.4 108 3.0
PDZ12B 11.74 12.24 80 0.5 10 5 8.4 105 3.0
PDZ13B 12.91 13.49 80 0.5 10 5 9.4 103 2.5
PDZ15B 14.34 14.98 80 0.5 15 5 11.4 99 2.0
PDZ16B 15.85 16.51 80 0.5 20 5 12.4 97 1.5
PDZ18B 17.56 18.35 80 0.5 20 5 14.4 93 1.5
PDZ20B 19.52 20.39 100 0.5 20 5 16.4 88 1.5
PDZ22B 21.54 22.47 100 0.5 25 5 18.4 84 1.3
PDZ24B 23.72 24.78 120 0.5 30 5 20.4 80 1.3
PDZ27B 26.19 27.53 150 0.5 40 5 23.4 73 1.0
PDZ30B 29.19 30.69 200 0.5 40 5 26.6 66 1.0
PDZ33B 32.15 33.79 250 0.5 40 5 29.7 60 0.9
PDZ36B 35.07 36.87 300 0.5 60 5 33.0 59 0.8

NXP Semiconductors Product data sheet

Voltage regulator diodes PDZ-B series

GRAPHICAL DATA

500

handbook, halfpage

P

tot

(mW)

400

300

200

100

0

0 50 100 200

150

T

amb

Fig.2 Power derating curve.

MBK245

(°C)

300

handbook, halfpage

I

F

(mA)

200

100

0

0.6 1

Tj = 25 °C.

0.8

MBG781

VF (V)

Fig.3 Forward current as a function of forward

voltage; typical values.

handbook, halfpage

0

S

Z

(mV/K)

−1

−2

−3

060

PDZ2.4B to PDZ4.3B.

T

= 25 °C to 150 °C.

j

4.3

20 40

MGL273

3.9

3.6

3.3

3.0

2.4

2.7

IZ (mA)

Fig.4 Temperature coefficient as a function of

working current; typical values.

10

handbook, halfpage

S

Z

(mV/K)

5

0

−5
02016

PDZ4.7B to PDZ12B.
T

= 25 °C to 150 °C.

j

12
11

10

9.1

8.2

7.5

6.8

4812

6.2

5.6

5.1

4.7

MGL274

IZ (mA)

Fig.5 Temperature coefficient as a function of

working current; typical values.

2004 Mar 22 6

NXP Semiconductors Product data sheet

3

P

Voltage regulator diodes PDZ-B series

PACKAGE OUTLINE

lastic surface-mounted package; 2 leads

D

A

E

X

M

H

D

vA

SOD32

Q

21

(1)

01

DIMENSIONS (mm are the original dimensions)

A

1

b

UNIT

A

max

1.1

mm 0.05

0.8

Note

1. The marking bar indicates the cathode

OUTLINE
VERSION

SOD323 SC-76

c D E H

p

0.40

0.25

1.8

0.25

0.10

IEC JEDEC JEITA

1.6

1.35

1.15

D

2.7

2.3

REFERENCES

L

0.45

0.15

b

p

scale

Q

0.25

0.15

v

0.2

p

A

A

2 mm

1

L

detail X

EUROPEAN

PROJECTION

p

c

ISSUE DATE

03-12-17

06-03-16

2004 Mar 22 7

NXP Semiconductors Product data sheet

Voltage regulator diodes PDZ-B series

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product spe cific ation.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

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use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

2004 Mar 22 8

60134) may cause permanent damage to

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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Printed in The Netherlands R76/05/pp9 Date of release: 2004 Mar 22 Document order number: 9397 750 12615