NXP PDTD123YK, PDTD123YS, PDTD123YT Schematic [ru]

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PDTD123Y series

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Rev. 02 — 16 November 2009 Product data sheet

1. Product profile

1.1 General description

500 mA NPN Resistor-Equipped Transistors (RET) family.

Table 1. Product overview

Type number Package PNP complement

PDTD123YK SOT346 SC-59A TO -236 PDTB123YK PDTD123YS PDTD123YT SOT23 - TO-236AB PDTB123YT

NXP JEITA JEDEC

[1]

SOT54 SC-43A TO-92 PDTB123YS

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

 Built-in bias resistors  Reduces component count  Simplifies circuit design  Reduces pick and place costs  500 mA output current capability  ±10 % resistor ratio tolerance

1.3 Applications

 Digital application in automotive and

industrial segment

 Cost saving alternative for BC817 series

in digital applications

 Controlling IC inputs  Switching loads

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ R2/R1 bias resistor ratio 4.1 4.55 5

collector-emitter voltage open base - - 50 V output current (DC) - - 500 mA

NXP Semiconductors

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Symbol

SOT54

1 input (base) 2 output (collector) 3 GND (emitter)

SOT54A

1 input (base) 2 output (collector) 3 GND (emitter)

PDTD123Y series

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

001aab34

1 2 3

006aaa145

1 2

006aaa145

SOT54 variant

1 input (base) 2 output (collector) 3 GND (emitter)

SOT23, SOT346

1 input (base) 2 GND (emitter) 3 output (collector)

1 2 3

001aab44

006aaa14

006aaa145

sym007

Product data sheet Rev. 02 — 16 November 2009 2 of 10

NXP Semiconductors

3. Ordering information

Table 4. Ordering information

Type number Package

PDTD123YK SC-59A plastic surface mounted package; 3 leads SOT346 PDTD123YS

[1]

PDTD123YT - plastic surface mounted package; 3 leads SOT23

[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4. Marking

Table 5. Marking codes

Type number Marking code

PDTD123YK E7 PDTD123YS D123YS PDTD123YT *7X

PDTD123Y series

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Name Description Version

SC-43A plastic single-ended leaded (through hole) package;

3 leads

[1]

SOT54

[1] * = -: made in Hong Kong

* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CEO

EBO

tot

stg

amb

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

collector-base voltage open emitter - 50 V collector-emitter voltage open base - 50 V emitter-base voltage open collector - 5 V input voltage

positive - +12 V

negative - −5V output current (DC) - 500 mA total power dissipation T

amb

≤ 25 °C

[1]

SOT346 - 250 mW

SOT54 - 500 mW

SOT23 - 250 mW storage temperature −65 +150 °C junction temperature - 150 °C ambient temperature −65 +150 °C

Product data sheet Rev. 02 — 16 November 2009 3 of 10

NXP Semiconductors

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

thermal resistance from junction to ambient

SOT346 - - 500 K/W SOT54 - - 250 K/W SOT23 - - 500 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7. Characteristics

Table 8. Characteristics

=25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

CBO

CEO

EBO

CEsat

I(off)

I(on)

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ R2/R1 bias resistor ratio 4.1 4.55 5 C

collector-base cut-off current

collector-emitter cut-off current

emitter-base cut-off current

DC current gain VCE=5V; IC=50mA 70 - collector-emitter

saturation voltage off-state input voltage VCE=5V; IC=100μA0.40.61V on-state input voltage VCE=0.3V; IC=20mA 0.5 1 1.4 V

collector capacitance VCB=10V; IE=ie=0A;

PDTD123Y series

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

in free air

VCB=40V; IE= 0 A - - 100 nA

=50V; IE= 0 A - - 100 nA

VCE=50V; IB=0A - - 0.5 μA

VEB=5V; IC=0A - - 0.65 mA

IC=50mA; IB=2.5mA - - 0.3 V

f=1MHz

[1]

-7-pF

Product data sheet Rev. 02 — 16 November 2009 4 of 10

NXP Semiconductors

PDTD123Y series

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

006aaa322

IC (mA)

(1) (2) (3)

−1

110

VCE = 5 V (1) T (2) T (3) T

= 100 °C

amb

= 25 °C

amb

= −40 °C

amb

Fig 1. DC current gain as a function of collector

current; typical values

−1

CEsat

(V)

(1)

(2)

(3)

−2

110

= 20

C/IB

(1) T (2) T (3) T

= 100 °C

amb

= 25 °C

amb

= −40 °C

amb

006aaa323

IC (mA)

Fig 2. Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa324

IC (mA)

I(on)

(V)

−1

(1)

(2)

(3)

110

VCE = 0.3 V (1) T (2) T (3) T

= −40 °C

amb

= 25 °C

amb

= 100 °C

amb

Fig 3. On-state input voltage as a function of

collector current; typical values

IC (mA)

006aaa325

101

I(off)

(V)

−1

(1) T (2) T (3) T

−1

= 5 V

CE amb amb amb

(1)

(2)

(3)

= −40 °C = 25 °C = 100 °C

Fig 4. Off-state input voltage as a function of

collector current; typical values

Product data sheet Rev. 02 — 16 November 2009 5 of 10

NXP Semiconductors

8. Package outline

PDTD123Y series

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

1.3

1.0

0.26

0.10

4.2

3.6

0.48

0.40

4.8

4.4

5.2

5.0

04-11-11Dimensions in mm

14.5

12.7

1.27

3.0

2.5

3.1

2.7

1.7

1.3

1.9

0.50

0.35

0.6

0.2

Fig 5. Package outline SOT346 (SC-59A/TO-236) Fig 6. Package outline SOT54 (SC-43A/TO-92)

0.45

0.38

0.48

0.40

1 2

1.27

4.2

3.6

4.8

4.4

3 max

0.45

0.38

0.48

0.40

5.08

2.54

4.2

3.6

4.8

4.4

2.5

max

0.45

0.38

1.27

2.54

04-11-16Dimensions in mm

2.54

5.2

5.0

14.5

12.7

5.2

5.0

04-06-28Dimensions in mm

14.5

12.7

05-01-10Dimensions in mm

Fig 7. Package outline SOT54A Fig 8. Package outline SOT54 variant

2.5

2.1

3.0

2.8

0.45

0.15

1.4

1.2

0.48

1.9

0.38

1.1

0.9

0.15

0.09

04-11-04Dimensions in mm

Fig 9. Package outline SOT23 (TO-236AB)

Product data sheet Rev. 02 — 16 November 2009 6 of 10

NXP Semiconductors

9. Packing information

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PDTD123YK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135 PDTD123YS SOT54 bulk, straight leads - -412 -

PDTD123YT SOT23 4 mm pitch, 8 mm tape and reel -215 - -235

[1] For further information and the availability of packing methods, see Section 12.

PDTD123Y series

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

[1]

3000 5000 10000

SOT54A tape and reel, wide pitch - - -116

tape ammopack, wide pitch - - -126

SOT54 variant bulk, delta pinning - -112 -

Product data sheet Rev. 02 — 16 November 2009 7 of 10

NXP Semiconductors

PDTD123Y series

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PDTD123Y_SER_2 20091116 Product data sheet - PDTD123Y_SER_1 Modifications:

PDTD123Y_SER_1 20050412 Product data sheet - -

• This data sheet was changed to reflect the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical content.

• Table 3 “Pinning”: updated

Product data sheet Rev. 02 — 16 November 2009 8 of 10

NXP Semiconductors

PDTD123Y series

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

11. Legal information

11.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains dat a from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

, including those pertaining to warranty,

11.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 02 — 16 November 2009 9 of 10

NXP Semiconductors

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

13. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Packing information . . . . . . . . . . . . . . . . . . . . . 7

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

13 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

PDTD123Y series

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 16 November 2009

Document identifier: PDTD123Y_SER_2

NXP PDTD123YK, PDTD123YS, PDTD123YT Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual

1. Product profile

1.1 General description

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

8. Package outline

9. Packing information

10. Revision history

11. Legal information

11.1 Data sheet status

11.2 Definitions

11.3 Disclaimers

11.4 Trademarks

12. Contact information

13. Contents