PDTD113ZT
NPN 500 mA, 50 V resistor-equipped transistor;
R1 = 1 kΩ, R2 = 10 kΩ
Rev. 02 — 23 March 2009 Product data sheet
1. Product profile
1.1 General description
NPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-Mounted
Device (SMD) plastic package.
PNP complement: PDTB113ZT.
1.2 Features
n Built-in bias resistors n Reduces component count
n Simplifies circuit design n Reduces pick and place costs
n 500 mA output current capability n ±10 % resistor ratio tolerance
1.3 Applications
n Digital application in automotive and
industrial segments
n Controlling IC inputs n Switching loads
n Cost-savingalternative forBC817 series
in digital applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
O
R1 bias resistor 1 (input) 0.7 1 1.3 kΩ
R2/R1 bias resistor ratio 9 10 11
collector-emitter voltage open base - - 50 V
output current - - 500 mA
NXP Semiconductors
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 input (base)
2 GND (emitter)
3 output (collector)
3. Ordering information
Table 3. Ordering information
Type number Package
PDTD113ZT - plastic surface-mounted package; 3 leads SOT23
PDTD113ZT
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
3
R1
1
12
Name Description Version
R2
sym007
3
2
4. Marking
Table 4. Marking codes
Type number Marking code
PDTD113ZT *7V
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
V
I
I
O
[1]
collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 5 V
input voltage
positive - +10 V
negative - −5V
output current - 500 mA
PDTD113ZT_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 23 March 2009 2 of 9
NXP Semiconductors
PDTD113ZT
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
total power dissipation T
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Characteristics
T
=25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1 bias resistor1 (input) 0.7 1 1.3 kΩ
R2/R1 bias resistor ratio 9 10 11
C
c
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain VCE=5V; IC=50mA 70 - collector-emitter
saturation voltage
off-state input voltage VCE=5V; IC= 100 µA 0.3 0.6 1 V
on-state input voltage VCE= 0.3 V; IC= 20 mA 0.4 0.8 1.4 V
collector capacitance VCB=10V; IE=ie=0A;
…continued
≤ 25 °C
amb
in free air
[1]
- 250 mW
[1]
- - 500 K/W
VCB=40V; IE= 0 A - - 100 nA
=50V; IE= 0 A - - 100 nA
V
CB
VCE=50V; IB= 0 A - - 0.5 µA
VEB=5V; IC= 0 A - - 0.8 mA
IC= 50 mA; IB= 2.5 mA - - 0.3 V
-7-pF
f = 100 MHz
PDTD113ZT_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 23 March 2009 3 of 9
NXP Semiconductors
PDTD113ZT
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
10
006aaa314
2
IC (mA)
(1)
(2)
(3)
3
10
3
10
h
FE
2
10
10
1
−1
10
110
VCE=5V
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C
=25°C
= −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−1
10
V
CEsat
(V)
−2
10
110
10
006aaa315
(1)
(2)
(3)
2
10
IC (mA)
IC/IB=20
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C
=25°C
= −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
3
10
006aaa316
2
IC (mA)
10
V
I(on)
(V)
1
−1
10
−1
10
(1)
(2)
(3)
110
VCE= 0.3 V
(1) T
(2) T
(3) T
amb
amb
amb
= −40 °C
=25°C
= 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
IC (mA)
006aaa317
101
1
V
I(off)
(V)
−1
10
3
10
−1
10
(1)
(2)
(3)
VCE=5V
(1) T
(2) T
(3) T
amb
amb
amb
= −40 °C
=25°C
= 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PDTD113ZT_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 23 March 2009 4 of 9
NXP Semiconductors
8. Package outline
PDTD113ZT
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
Fig 5. Package outline SOT23 (TO-236AB)
9. Packing information
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
PDTD113ZT SOT23 4 mm pitch, 8 mm tape and reel -215 -235
2.5
2.1
3.0
2.8
3
0.45
0.15
1.4
1.2
12
0.48
1.9
0.38
1.1
0.9
0.15
0.09
[1]
04-11-04Dimensions in mm
3000 10000
[1] For further information and the availability of packing methods, seeSection 13.
PDTD113ZT_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 23 March 2009 5 of 9
NXP Semiconductors
10. Soldering
PDTD113ZT
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
3.3
2.9
1.9
solder lands
3
1.7
0.7
(3×)
0.5
(3×)
0.6
(3×)
1
0.6
(3×)
Fig 6. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
2
Dimensions in mm
solder resist
solder paste
occupied area
sot023_fr
solder lands
4.6
2.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
solder resist
occupied area
sot023_fw
Fig 7. Wave soldering footprint SOT23 (TO-236AB)
PDTD113ZT_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 23 March 2009 6 of 9
NXP Semiconductors
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
PDTD113ZT
11. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTD113ZT_2 20090323 Product data sheet - PDTD113Z_SER_1
Modifications:
PDTD113Z_SER_1 20050405 Product data sheet - -
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type numbers PDTD113ZK and PDTD113ZS removed
• Table 5 “Limiting values”: typo for maximum value of V
positive corrected
I
• Section 10 “Soldering”: added
• Section 12 “Legal information”: updated
PDTD113ZT_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 23 March 2009 7 of 9
NXP Semiconductors
12. Legal information
12.1 Data sheet status
PDTD113ZT
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in thisdocument may have changed sincethis document was published andmay differin case ofmultiple devices.The latest productstatus
information is available on the Internet at URL
[1][2]
Product status
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product type number(s)and title. Ashortdatasheet is intended
for quickreference only and should notbe relied upon to contain detailedand
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXPSemiconductorsdoes not give anyrepresentations or
warranties, expressed or implied, as tothe accuracy or completeness ofsuch
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right tomake
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This documentsupersedes and replaces all information suppliedprior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
[3]
http://www.nxp.com.
Definition
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134) may cause permanent
damage tothedevice. Limiting valuesare stress ratings onlyand operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercialsale,as published
at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of anylicenseunder any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
12.4 Trademarks
Notice: Allreferenced brands,productnames, service namesand trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PDTD113ZT_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 23 March 2009 8 of 9
NXP Semiconductors
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 5
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Contact information. . . . . . . . . . . . . . . . . . . . . . 8
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
PDTD113ZT
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 March 2009
Document identifier: PDTD113ZT_2
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