NTE NTE553 Datasheet

NTE553

Schottky Barrier Diode

Description:

The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF
switching applications.

Absolute Maximum Ratings:

Reverse Voltage, V
Forward Current, I
Power Dissipation, P

R

F

D

Operating Temperature Range, T
Storage Temperature range, T

Electrical Characteristics:

Parameter

(TA = +25°C unless otherwise specified)

opr

stg

(TA = +25°C unless otherwise specified)

Symbol Test Conditions Min Typ Max Unit

Reverse Breakdown Voltage V
Reverse Leakage Current I
Forward Voltage V
Diode Capacitance C
Series Resistance R
Series Inductance L

(BR)R

R

F
T
S

S

–35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–20° to + 60°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–45° to + 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IR = –10µA –35 – – V
VR = –25V – – –0.1 µA
IF = 10mA – – 1.0 V
VR = –6V, f = 1MH

Z

IF = 2mA, f = 100MH
f = 250MH

Z

Z

– – 1.2 pf
– – 1.2 Ω
– 3 – nH

1.000
(25.4)

Min

.200 (5.08)

Max

.090 (2.28) Dia Max.022 (0.509) Dia Max

Color Band Denotes Cathode