NSC LF347MWC, LF347M, LF347N, LF347MX Datasheet

LF147/LF347
Wide Bandwidth Quad JFET Input Operational Amplifiers

General Description

The LF147 is a low cost, high speed quad JFET input opera­tional amplifier with an internally trimmed input offset voltage
(BI-FET II

™

technology). The device requires a low supply
current and yet maintains a large gain bandwidth product
and a fast slew rate. In addition, well matched high voltage
JFET input devices provide very low input bias and offset
currents. The LF147 is pin compatible with the standard
LM148. This feature allows designers to immediately up­grade the overall performance of existing LF148 and LM124
designs.

The LF147 may be used in applications such as high speed
integrators, fast D/A converters, sample-and-hold circuits
and many other circuits requiring low input offset voltage,
low input bias current, high input impedance, high slew rate
and wide bandwidth. The device has low noise and offset
voltage drift.

Features

n Internally trimmed offset voltage: 5 mV max
n Low input bias current: 50 pA
n Low input noise current:

n Wide gain bandwidth: 4 MHz
n High slew rate: 13 V/µs
n Low supply current: 7.2 mA
n High input impedance: 10

12

Ω

n Low total harmonic distortion A

V

=

10,:

<

0.02

%

R

L

=

10k, V

O

=

20 Vp-p, BW=20 Hz−20 kHz

n Low 1/f noise corner: 50 Hz
n Fast settling time to 0.01%:2µs

Simplified Schematic Connection Diagram

BI-FET II™is a trademarkof National Semiconductor Corporation.

1

⁄4Quad

DS005647-13

Dual-In-Line Package

DS005647-1

Note 1: Available per SMD#8102306, JM38510/11906.

Top View

Order Number LF147J, LF347M, LF347BN,

LF347N or LF147J/883 (Note 1)

See NS Package Number J14A, M14A or N14A

May 1999

LF147/LF347 Wide Bandwidth Quad JFET Input Operational Amplifiers

© 1999 National Semiconductor Corporation DS005647 www.national.com

Absolute Maximum Ratings (Note 2)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

LF147 LF347B/LF347

Supply Voltage

±

22V

±

18V

Differential Input Voltage

±

38V

±

30V

Input Voltage Range

±

19V

±

15V

(Note 3)

Output Short Circuit Continuous Continuous

Duration (Note 4)

Power Dissipation 900 mW 1000 mW

(Notes 5, 11)

T

j

max 150˚C 150˚C

θ

jA

Ceramic DIP (J) Package 70˚C/W
Plastic DIP (N) Package 75˚C/W
Surface Mount Narrow (M) 100˚C/W

LF147 LF347B/LF347

Surface Mount Wide (WM) 85˚C/W

Operating Temperature (Note 6) (Note 6)

Range

Storage Temperature

Range −65˚C≤T

A

≤150˚C

Lead Temperature

(Soldering, 10 sec.) 260˚C 260˚C

Soldering Information

Dual-In-Line Package

Soldering (10 seconds) 260˚C

Small Outline Package

Vapor Phase (60 seconds) 215˚C
Infrared (15 seconds) 220˚C

See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.

ESD Tolerance (Note 12) 900V

DC Electrical Characteristics (Note 7)

Symbol Parameter Conditions LF147 LF347B LF347 Units

Min Typ Max Min Typ Max Min Typ Max

V

OS

Input Offset Voltage R

S

=

10 kΩ,T

A

=

25˚C 1 5 3 5 5 10 mV

Over Temperature 8 7 13 mV

∆V

OS

/∆T Average TC of Input Offset R

S

=

10 kΩ 10 10 10 µV/˚C

Voltage

I

OS

Input Offset Current T

j

=

25˚C, (Notes 7, 8) 25 100 25 100 25 100 pA

Over Temperature 25 4 4 nA

I

B

Input Bias Current T

j

=

25˚C, (Notes 7, 8) 50 200 50 200 50 200 pA

Over Temperature 50 8 8 nA

R

IN

Input Resistance T

j

=

25˚C 10

12

10

12

10

12

Ω

A

VOL

Large Signal Voltage Gain V

S

=

±

15V, T

A

=

25˚C 50 100 50 100 25 100 V/mV

V

O

=

±

10V, R

L

=

2kΩ

Over Temperature 25 25 15 V/mV

V

O

Output Voltage Swing V

S

=

±

15V, R

L

=

10 kΩ

±12±

13.5

±12±

13.5

±12±

13.5 V

V

CM

Input Common-Mode Voltage V

S

=

±

15V

±

11 +15

±

11 +15

±

11 +15 V

Range −12 −12 −12 V

CMRR Common-Mode Rejection Ratio R

S

≤10 kΩ 80 100 80 100 70 100 dB
PSRR Supply Voltage Rejection Ratio (Note 9) 80 100 80 100 70 100 dB
I

S

Supply Current 7.2 11 7.2 11 7.2 11 mA

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AC Electrical Characteristics (Note 7)

Symbol Parameter Conditions LF147 LF347B LF347 Units

Min Typ Max Min Typ Max Min Typ Max

Amplifier to Amplifier Coupling T

A

=

25˚C, −120 −120 −120 dB
f=1 Hz−20 kHz
(Input Referred)

SR Slew Rate V

S

=

±

15V, T

A

=

25˚C 8 13 8 13 8 13 V/µs

GBW Gain-Bandwidth Product V

S

=

±

15V, T

A

=

25˚C 2.2 4 2.2 4 2.2 4 MHz

e

n

Equivalent Input Noise Voltage T

A

=

25˚C, R

S

=

100Ω,202020

f

=

1000 Hz

i

n

Equivalent Input Noise Current T

j

=

25˚C, f=1000 Hz 0.01 0.01 0.01

Note 2: Absolute MaximumRatings indicate limits beyond which damage to the device may occur.Operating Ratingsindicate conditionsfor whichthe deviceis func­tional, but do not guarantee specific performance limits.

Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4: Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction

temperature will be exceeded.
Note 5: For operating at elevated temperature, these devices must be derated based on a thermal resistance of θ

jA

.

Note 6: The LF147 is available in the military temperature range −55˚C≤T

A

≤125˚C, while the LF347B and the LF347 are available in the commercial temperature

range 0˚C≤T

A

≤70˚C. Junction temperature can rise to Tjmax=150˚C.

Note 7: Unless otherwisespecified the specifications apply over the full temperature range and forV

S

=

±

20V for the LF147 and forV

S

=

±

15V for the LF347B/LF347.

V

OS,IB

, and IOSare measured at V

CM

=

0.

Note 8: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T

j

. Due to limited pro­duction test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient tem­perature as a result of internal power dissipation, P

D.Tj

=

T

A+θjAPD

where θjAis the thermal resistance from junction to ambient. Use of a heat sink is recommended

if input bias current is to be kept to a minimum.
Note 9: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from

V

S

=

±

5V to±15V for the LF347 and LF347B and from V

S

=

±

20V to±5V for the LF147.

Note 10: Refer to RETS147X for LF147D and LF147J military specifications.
Note 11: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate out-

side guaranteed limits.
Note 12: Human body model, 1.5 kΩ in series with 100 pF.

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Typical Performance Characteristics

Input Bias Current

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Input Bias Current

DS005647-15

Supply Current

DS005647-16

Positive Common-Mode
Input Voltage Limit

DS005647-17

Negative Common-Mode
Input Voltage Limit

DS005647-18

Positive Current Limit

DS005647-19

Negative Current Limit

DS005647-20

Output Voltage Swing

DS005647-21

Output Voltage Swing

DS005647-22

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