Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 2)
Supply Voltage (V
CC−VEE
) 36V
Reference Voltage V
EE≤VR≤VCC
Logic Input Voltage VR−4.0V≤VIN≤VR+6.0V
Analog Voltage V
EE≤VA≤VCC
+6V;
V
A≤VEE
+36V
Analog Current |I
A
|<20 mA
Power Dissipation (Note 3)
Molded DIP (N Suffix) 500 mW
Cavity DIP (D Suffix) 900 mW
Operating Temperature Range
LF11201, 2 and LF11331, 2, 3 −55˚C to +125˚C
LF13201, 2 and LF13331, 2, 3 0˚C to +70˚C
Storage Temperature −65˚C to +150˚C
Soldering Information
N and D Package (10 sec.) 300˚C
SO Package:
Vapor Phase (60 sec.) 215˚C
Infrared (15 sec.) 220˚C
Electrical Characteristics (Note 4)
LF11331/2/3 LF13331/2/3
Symbol Parameter Conditions LF11201/2 LF13201/2 Units
Min Typ Max Min Typ Max
R
ON
“ON” Resistance V
A
=
0, I
D
=
1mA T
A
=
25˚C 150 200 150 250 Ω
200 300 200 350 Ω
R
ON
Match “ON” Resistance Matching T
A
=
25˚C 5 20 10 50 Ω
V
A
Analog Range
±10±
11
±10±
11 V
I
S(ON) +
Leakage Current in “ON” Condition Switch “ON,” V
S
=
V
D
=
±
10V T
A
=
25˚C 0.3 5 0.3 10 nA
I
D(ON)
3 100 3 30 nA
I
S(OFF)
Source Current in “OFF” Condition Switch “OFF,” V
S
=
+10V, T
A
=
25˚C 0.4 5 0.4 10 nA
V
D
=
−10V 3 100 3 30 nA
I
D(OFF)
Drain Current in “OFF” Condition Switch “OFF,” V
S
=
+10V, T
A
=
25˚C 0.1 5 0.1 10 nA
V
D
=
−10V 3 100 3 30 nA
V
INH
Logical “1” Input Voltage 2.0 2.0 V
V
INL
Logical “0” Input Voltage 0.8 0.8 V
I
INH
Logical “1” Input Current V
IN
=
5V T
A
=
25˚C 3.6 10
25
3.6 40
100
µA
I
INL
Logical “0” Input Current V
IN
=
0.8 T
A
=
25˚C 0.1 0.1 µA
11µA
t
ON
Delay Time “ON” V
S
=
±
10V, (
Figure 3
)T
A
=
25˚C 500 500 ns
t
OFF
Delay Time “OFF” V
S
=
±
10V, (
Figure 3
)T
A
=
25˚C 90 90 ns
t
ON−tOFF
Break-Before-Make V
S
=
±
10V, (
Figure 3
)T
A
=
25˚C 80 80 ns
C
S(OFF)
Source Capacitance Switch “OFF,” V
S
=
±
10V T
A
=
25˚C 4.0 4.0 pF
C
D(OFF)
Drain Capacitance Switch “OFF,” V
D
=
±
10V T
A
=
25˚C 3.0 3.0 pF
C
S(ON) +
Active Source and Drain Capacitance Switch “ON,” V
S
=
V
D
=
0V T
A
=
25˚C 5.0 5.0 pF
C
D(ON)
I
SO(OFF)
“OFF” Isolation (
Figure 4
), (Note 5) T
A
=
25˚C −50 −50 dB
CT Crosstalk (
Figure 4
), (Note 5) T
A
=
25˚C −65 −65 dB
SR Analog Slew Rate (Note 6) T
A
=
25˚C 50 50 V/µs
I
DIS
Disable Current (
Figure 5
), (Note 7) T
A
=
25˚C 0.4 1.0 0.6 1.5 mA
0.6 1.5 0.9 2.3 mA
I
EE
Negative Supply Current All Switches “OFF,” V
S
=
±
10V T
A
=
25˚C 3.0 5.0 4.3 7.0 mA
4.2 7.5 6.0 10.5 mA
I
R
Reference Supply Current All Switches “OFF,” V
S
=
±
10V T
A
=
25˚C 2.0 4.0 2.7 5.0 mA
2.8 6.0 3.8 7.5 mA
I
CC
Positive Supply Current All Switches “OFF,” V
S
=
±
10V T
A
=
25˚C 4.5 6.0 7.0 9.0 mA
6.3 9.0 9.8 13.5 mA
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: Refer to RETSF11201X, RETSF11331X, RETSF11332X and RETSF11333X for military specifications.
Note 3: For operating at high temperature the molded DIP products must be derated based on a +100˚C maximum junction temperature and a thermal resistance
of +150˚C/W, devices in the cavity DIP are based on a +150˚C maximum junction temperature and are derated at
±
100˚C/W.
www.national.com 2