NSC 5962-9471801QSA, 5962-9471801QRA Datasheet

54ABT541
Octal Buffer/Line Driver with TRI-STATE

General Description

The ’ABT541 is an octal buffer and line driver with
TRI-STATE outputs designed to be employed as a memory
and address driver, clock driver, or bus-oriented transmitter/
receiver. The ’ABT541 is similar to the ’ABT244 with broad­side pinout.

Features

n Non-inverting buffers
n Output sink capability of 48 mA, source capability of

24 mA

Ordering Code

Military Package Package Description

Number

54ABT541J-QML J20A 20-Lead Ceramic Dual-In-Line
54ABT541W-QML W20A 20-Lead Cerpack
54ABT541E-QML E20A 20-Lead Ceramic Leadless Chip Carrier, Type C

n Guaranteed latchup protection
n High impedance glitch free bus loading during entire

power up and power down cycle

n Nondestructive hot insertion capability
n Flow-through pinout for ease of PC board layout
n Disable time less than enable time to avoid bus

contention

n Standard Microcircuit Drawing (SMD) 5962-9471801

®

Outputs

54ABT541 Octal Buffer/Line Driver with TRI-STATE Outputs

August 1998

Connection Diagram

Pin Assignment

DIP and Cerpack

DS100217-1

Pin Assignment

LCC

DS100217-30

TRI-STATE®is a registered trademarkof National Semiconductor Corporation.

Pin Names Description

OE
I

0–I7

O

1

0–O7

,OE

Output Enable Input (Active Low)

2

Inputs
Outputs

Truth Table

Inputs Outputs

OE

1

LLH H
HXX Z
XHX Z
LLL L

=

H

HIGH Voltage Level
L=LOW Voltage Level
X=Immaterial
Z=High Impedance

OE

2

I ABT541

© 1998 National Semiconductor Corporation DS100217 www.national.com

Absolute Maximum Ratings (Note 1)

Storage Temperature −65˚C to +150˚C
Ambient Temperature under Bias −55˚C to +125˚C
Junction Temperature under Bias

Ceramic −55˚C to +175˚C

Pin Potential to

V

CC

Ground Pin −0.5V to +7.0V
Input Voltage (Note 2) −0.5V to +7.0V
Input Current (Note 2) −30 mA to +5.0 mA
Voltage Applied to Any Output

in the Disabled or

Power-Off State −0.5V to 5.5V

in the HIGH State −0.5V to V

CC

in LOW State (Max) twice the rated I
DC Latchup Source Current −500 mA
Over Voltage Latchup (I/O) 10V

Recommended Operating
Conditions

Free Air Ambient Temperature

Military −55˚C to +125˚C
Supply Voltage

Military +4.5V to +5.5V
Minimum Input Edge Rate (∆V/∆t)

Data Input 50 mV/ns

Enable Input 20 mV/ns

Current Applied to Output

DC Electrical Characteristics

Symbol Parameter ABT541 Units V

CC

Min Typ Max

V
V
V
V

Input HIGH Voltage 2.0 V Recognized HIGH Signal

IH

Input LOW Voltage 0.8 V Recognized LOW Signal

IL

Input Clamp Diode Voltage −1.2 V Min I

CD

Output HIGH Voltage 54ABT 2.5 V Min I

OH

54ABT 2.0 V Min I
V
I

Output LOW Voltage 54ABT 0.55 V Min I

OL

Input HIGH Current 5 µA Max V

IH

5V

I

Input HIGH Current 7 µA Max V

BVI

Breakdown Test

I

Input LOW Current −5 µA Max V

IL

−5 V

V

I
I
I
I
I
I
I
I

I

Input Leakage Test 4.75 V 0.0 I

ID

Output Leakage Current 50 µA 0 − 5.5V V

OZH

Output Leakage Current −50 µA 0 − 5.5V V

OZL

Output Short-Circuit Current −100 −275 mA Max V

OS

Output High Leakage Current 50 µA Max V

CEX

Bus Drainage Test 100 µA 0.0 V

ZZ

Power Supply Current 50 µA Max All Outputs HIGH

CCH

Power Supply Current 30 mA Max All Outputs LOW

CCL

Power Supply Current 50 µA Max OE

CCZ

Additional ICC/Input Outputs Enabled 2.5 mA V

CCT

Outputs TRI-STATE 2.5 mA Max Enable Input V
Outputs TRI-STATE 50 µA Data Input V

I

CCD

Dynamic I

CC

No Load mA/ Max Outputs Open, OE

(Note 4) 0.1 MHz One Bit Toggling (Note 3),

Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions
is not implied.

Note 2: Either voltage limit or current limit is sufficient to protect inputs.
Note 3: For 8 bits toggling, I
Note 4: Guaranteed, but not tested.

CCD

<

0.8 mA/MHz.

Conditions

=

−18 mA

IN

=

−3 mA

OH

=

−24 mA

OH

=

48 mA

OL

=

2.7V (Note 4)

IN

=

V

IN

CC

=

7.0V

IN

=

0.5V (Note 4)

IN

=

0.0V

IN

=

1.9 µA

ID

All Other Pins Grounded

=

2.7V; OE

OUT

=

0.5V; OE

OUT

=

0.0V

OUT

=

V

OUT

CC

=

5.5V; All Others GND

OUT

=

V

n

CC

=

n

=

n

;

All Others at VCCor Ground

=

− 2.1V

V

I

CC

All Others at V

I

=

I

CC

=

V

CC

V

CC

or Ground

=

n

50%Duty Cycle

(mA)

OL

2.0V

2.0V

− 2.1V

− 2.1V;

GND,

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DC Electrical Characteristics

Symbol Parameter Min Max Units V

V

OLP

V

OLV

Note 5: Max number of outputs defined as (n).n−1data inputs are driven 0V to 3V. One output at LOW. Guaranteed, but not tested.

Quiet Output Maximum Dynamic V
Quiet Output Minimum Dynamic V

OL

OL

1.0 V 5.0 T

-1.45 V 5.0 T

CC

AC Electrical Characteristics

54ABT

=

T

−55˚C to +125˚C

A

Symbol Parameter V

=

4.5V–5.5V Units

CC

=

C

50 pF

L

Min Max

t

PLH

t

PHL

t

PZH

t

PZL

t

PHZ

t

PLZ

Propagation Delay 1.0 5.0 ns
Data to Outputs 1.0 5.3
Output Enable Time 1.1 7.2 ns

1.5 7.9

Output Disable Time 1.5 7.5 ns

1.5 7.9

Capacitance

Symbol Parameter Typ Units Conditions

C

IN

C

(Note 6) Output Capacitance 9.0 pF V

OUT

Note 6: C

is measured at frequency of f=1 MHz, per MIL-STD-883B, Method 3012.

OUT

Input Capacitance 5.0 pF V

=

C

L

=

A

=

A

Conditions

50 pF, R

=

L

25˚C (Note 5)
25˚C (Note 5)

=

T

25˚C

A

=

0.0V

CC

=

5.0V

CC

500Ω

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