Nokia 8890 Service Manual 03sys
PAMS Technical Documentation
NSB–6 Series Transceivers
System Module
Issue 1 06/2000 E Nokia Mobile Phones Ltd.
NSB–6
System Module
PAMS Technical Documentation
CONTENTS
Transceiver NSB–6 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Introduction 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operation Modes 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Interconnection Diagram 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
System Module 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Baseband Module 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Block Diagram 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Technical Summary 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
External and Internal Signals and Connections 10. . . . . . . . .
DC (charger) connector 10. . . . . . . . . . . . . . . . . . . . . . . . . . .
Service connector 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery connector 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SIM card connector 11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RTC backup battery 11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Distribution 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery charging 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Startup Charging 13. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Overvoltage Protection 13. . . . . . . . . . . . . . . . . . . .
Battery Removal During Charging 15. . . . . . . . . . . . . . . . . .
PWM 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Identification 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Temperature 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltage Regulators 18. . . . . . . . . . . . . . . . . . . . . . . .
Switched Mode Supply VSIM 20. . . . . . . . . . . . . . . . . . . . . .
Power Up and Power Down 20. . . . . . . . . . . . . . . . . . . . . . . . .
Power up with a charger 20. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Up With The Power Switch (PWRONX) 21. . . . . . .
Power Up by RTC 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Up by IBI 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Down 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Modes of Operation 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Acting Dead 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Active Mode 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Sleep Mode 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Charging 24. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Watchdog 24. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Audio control 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PCM serial interface 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Control 26. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MAD2 WD1 26. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Memories 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MAD memory configuration 34. . . . . . . . . . . . . . . . . . . . . . .
Memory 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Program and Data Memory 34. . . . . . . . . . . . . . . . . . . . . . .
Work Memory 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MCU Memory Requirements 34. . . . . . . . . . . . . . . . . . . . . .
MCU Memory Map 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Flash Programming 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
COBBA GJP 36. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Real Time Clock 37. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RTC backup battery charging 37. . . . . . . . . . . . . . . . . . . . . .
NSB–6
System Module
Security 37. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Baseband Testing 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Alignments 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Baseband Startup for Testing 38. . . . . . . . . . . . . . . . . . . . . .
RF Module 39. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Environmental specifications 39. . . . . . . . . . . . . . . . . . . . . . . . .
Main Technical specifications 39. . . . . . . . . . . . . . . . . . . . . . . .
Maximum Ratings 39. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Characteristics 39. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Frequency Plan 40. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC characteristics 40. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Regulators 40. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Control signals (typical current consumption in different modes) 40
Power Distribution Diagram 41. . . . . . . . . . . . . . . . . . . . . . . . . .
RF Functional Description 42. . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency synthesizer 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Receiver 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transmitter 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AGC strategy 46. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AFC function 46. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC–compensation 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Receiver characteristics 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transmitter characteristics 47. . . . . . . . . . . . . . . . . . . . . . . . . . .
Parts list of UP9 (EDMS Issue 9.2) Code: 0201362 48. . . . . . . . . .
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NSB–6
System Module
Schematic Diagrams: UP9 (Section 10 at the back of the binder)
Connection between RF and BB modules (Version 12.03 Edit 12) layout 12 A–1
Baseband Block Interconnections (Version 12.03 Edit 12) for layout 12 A–2
Circuit Diagram of Power Supply (Version 12.03 Edit 16) for layout 12 A–3
Circuit Diagram of MAD Block (Version 12.03 Edit 14) for layout 12 A–4
Circuit Diagram of CPU Block (Version 12.03 Edit 14) for layout 12 A–5
Circuit Diagram of RF Block (Version 12.03 Edit 43) for layout 12 A–6
Circuit Diagram of Audio and RFI (Version 12.03 Edit 14) for layout 12 A–7
Circuit Diagram of IR Module (Version 12.03 Edit 8) for layout 12 A–8
Circuit Diagram of UI (Version 12.03 Edition 12) for layout version 12 A–9
Layout Diagram of UP9 – Top (Version 12) A–10. . . . . . . . . . . . . . . . .
Layout Diagram of UP9 – Bottom (Version 12) A–10. . . . . . . . . . . . . .
PAMS Technical Documentation
Testpoints of UP9 – Top (Version 12) A–11. . . . . . . . . . . . . . . . . . . . . .
Testpoints of UP9 – Bottom (Version 12) A–11. . . . . . . . . . . . . . . . . . .
RF Testpoints of UP9 – Circuit Diagram (Version 12) A–12. . . . . . . .
RF Testpoints of UP9 – Layout (Version 12) A–13. . . . . . . . . . . . . . . .
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NSB–6
System Module
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NSB–6
System Module
Transceiver NSB–6
Introduction
The NSB–6 is a dual band transceiver unit designed for the GSM900 (in-
cluding EGSM) and GSM1900 networks. It is both GSM900 phase 2 power
class 4 transceiver (2W) and GSM1900 power class 1 (1W) transceiver.
The transceiver consists of System/RF module (UP9), Display module
(UX7) and assembly parts.
The transceiver has a full graphic display and the user interface is based
on a Jack style UI with two soft keys.
The NSB–6 transceiver uses internal PIFA antenna combined with ex-
tractable whip antenna.
The transceiver has a low leakage tolerant earpiece and an omnidirec-
tional microphone located to a slide, providing an excellent audio quality.
The transceiver supports a full rate, an enhanced full rate and a half rate
speech decoding.
PAMS Technical Documentation
An integrated IR link provides a connection between two NSB–6 trans-
ceivers or a transceiver and a PC (internal data), or a transceiver and a
printer.
The small SIM ( Subscriber Identity Module ) card is located underneath
the back cover of the phone.
Operation Modes
There are five different operation modes:
– power off mode
– idle mode
– active mode
– charge mode
– local mode
In the power off mode only the circuits needed for power up are supplied.
In the idle mode circuits are powered down and only sleep clock is run-
ning.
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In the active mode all the circuits are supplied with power although some
parts might be in the idle state part of the time.
The charge mode is effective in parallel with all previous modes. The
charge mode itself consists of two different states, i.e. the fast charge and
the maintenance mode.
The local mode is used for alignment and testing.
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Interconnection Diagram
NSB–6
System Module
Keyboard
module
14
LCD
module
9
64
SIM Battery
Radio
Module
2+2
2
UP9
Charger
Antenna
2
3
2
4
Slide (mic.)
IR Link
Earpiece
HF/HS
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NSB–6
System Module
System Module
Baseband Module
The baseband architecture supports a power saving function called ”sleep
mode”. This sleep mode shuts off the VCTCXO, which is used as system
clock source for both RF and baseband. During the sleep mode the sys-
tem runs from a 32 kHz crystal. The phone is waken up by a timer run-
ning from this 32 kHz clock supply. The sleeping time is determined by
some network parameters. The sleep mode is entered when both the
MCU and the DSP are in standby mode and the normal VCTCXO clock
has been switched off.
The battery charging is controlled by a PWM signal from the CCONT. The
PWM duty cycle is determined by a charging software and is fed to the
CHAPS charging switch.
PAMS Technical Documentation
Two types of chargers can be connected to the phone. Standard chargers
(two wires) provide coarse supply power, which is switched by the
CHAPS for suitable charging voltage and current. Advanced chargers
(three wires) are equipped with a control input. Three wire chargers are
treated like two wire ones.
Block Diagram
TX/RX SIGNALS
UI
COBBA SUPPLY
COBBA
RF SUPPLIES
CCONT
BB SUPPLY
PA SUPPL Y
32kHz
CLK
SLEEP CLOCK
SIM
13MHz
CLK
SYSTEM CLOCK
IR
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BASEBAND
MAD
+
MEMORIES
CHAPS
EXT. AUDIO
HS–connector
Charger
connector
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PAMS Technical Documentation
Technical Summary
The baseband module consists four ASICs; CHAPS, CCONT, COBBA–
GJP and MAD2WD1, which take care of the baseband functions of the
engine.
The baseband is running from a 2.8V power rail, which is supplied by a
power controlling ASIC CCONT. MAD2WD1 supply voltages are VBB and
VCORE (V2V), VBB feeds I/O pins so that MAD2WD1 is externally fully
compatible with old versions. VCORE feeds MAD2WD1 internal fuctions
supplyoltage; CPU, DSP and system logic. In the CCONT there are 6 in-
dividually controlled regulator outputs for RF–section and two outputs for
the baseband. In addition there is one +5V power supply output (V5V).
The CCONT contains also a SIM interface, which supports both 3V and
5V SIM–cards. A real time clock function is integrated into the CCONT,
which utilizes the same 32kHz clock supply as the sleep clock. A backup
power supply is provided for the RTC, which keeps the real time clock
running when the main battery is removed. The backup power supply is a
rechargable battery. The backup time with the battery is ten minutes mini-
mum.
NSB–6
System Module
The interface between the baseband and the RF section is mainly han-
dled by a COBBA ASIC. COBBA provides A/D and D/A conversion of the
in–phase and quadrature receive and transmit signal paths and also A/D
and D/A conversions of received and transmitted audio signals to and
from the user interface. The COBBA supplies the analog TXC and AFC
signals to RF section according to the MAD DSP digital control. Data
transmission between the COBBA and the MAD is implemented using se-
rial bus for high speed signalling and for PCM coded audio signals. Digital
speech processing is handled by the MAD ASIC. COBBA is a dual volt-
age circuit, the digital parts are running from the baseband supply VBB
and the analog parts are running from the analog supply VCOBBA.
The baseband supports both internal and external microphone inputs and
speaker outputs. Input and output signal source selection and gain control
is done by the COBBA according to control messages from the MAD.
Keypad tones, DTMF, and other audio tones are generated and encoded
by the MAD and transmitted to the COBBA for decoding. A buzzer and an
external vibra alert control signals are generated by the MAD with sepa-
rate PWM outputs.
EMC shielding is implemented using a metallized plastic frame. On the
other side the engine is shielded with PCB grounding. Heat generated by
the circuitry will be conducted out via the PCB ground planes.
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System Module
PAMS Technical Documentation
External and Internal Signals and Connections
This section describes the external electrical connection and interface lev-
els on the baseband. The electrical interface specifications are collected
into tables that covers a connector or a defined interface.
DC (charger) connector
DC (charger) connector is physically integrated in the same component
with the accessory interface connector. DC connector has both jack and
contact pads for desk stand.
Service connector
Name Parameter Min Typ Max Unit Remark
MBUS Serial clock
from the
Prommer
FBUS_RX Serial data
from the
Prommer
FBUS_TX Data ac-
knowledge to
the Prommer
GND GND 0 0 V Ground
0
2.0
0
2.0
0
2.0
logic low
logic low
logic low
logic high
logic low
logic high
0.8
2.85
0.8
2.85
0.5
2.85
V Prommer detection and Seri-
al Clock for synchronous
communication
V Receive Data from
Prommer to Baseband
V Transmit Data from Base-
band to Prommer
The service connector is used as a flash programming interface for updating (i.e. re–programming) the flash program memory and an electrical
access for services to the engine.
When the flash prommer is connected to the phone supply power is provided through the battery contacts and the phone is powered up with a
pulse given to the BTEMP line.
Battery connector
The BSI contact on the battery connector is used to detect when the battery is to be removed to be able to shut down the operations of the SIM
card before the power is lost if the battery is removed with power on. The
BSI contact disconnects earlier than the supply power contacts to give
enough time for the SIM and LCD shut down.
Name Min Typ Max Unit Notes
VBATT 3.0 3.9 4.2 V Battery voltage
BSI
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0 2.85 V Battery size indication
Phone has 100kohm pull up resistor.
SIM Card removal detection
(Treshold is 2.4V@VBB=2.8V)
68 kohm Battery indication resistor (BLB–2)
22 kohm Battery indication resistor (service battery)
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PAMS Technical Documentation
NSB–6
System Module
NotesUnitMaxTypMinName
BTEMP
BGND 0 0 V Battery ground
0 1.4 V Battery temperature indication
Phone has a 100k (+–5%) pullup resistor,
Battery package has a NTC pulldown resistor:
47k+–5%@+25C , B=4050+–3%
2.1
5 10
1.9
90 100
0 1 kohm Local mode initialization (in production)
3
20
2.85
200
V
ms
V
ms
Phone power up by battery (input)
Power up pulse width
Battery power up by phone (output)
Power up pulse width
SIM card connector
The SIM card connector is located on the engine board beside the battery
pack.
Pin Name Parameter Min Typ Max Unit Notes
4 GND GND 0 0 V Ground
3, 5 VSIM 5V SIM Card
3V SIM Card
6 DATA 5V Vin/Vout
3V Vin/Vout
2 SIMRST 5V SIM Card
3V SIM Card
4.8
2.8
4.0
0
2.8
0
4.0
2.8
5.0
3.0
”1”
”0”
”1”
”0”
”1”
”1”
5.2
3.2
VSIM
0.5
VSIM
0.5
VSIM
VSIM
V Supply voltage
V SIM data
Trise/Tfall max 1us
V SIM reset
1 SIMCLK Frequency
Trise/Tfall
3.25
25
MHz
ns
SIM clock
RTC backup battery
The RTC block in CCONT needs a power backup to keep the clock running when the phone battery is disconnected. The backup power is supplied from a rechargable polyacene battery that can keep the clock running ten minutes minimum. The backup battery is charged from the main
battery through CHAPS.
Signal Parameter Min Typ Max Unit Notes
VBACK
VBACK
Backup battery charging from CHAPS
Backup battery charging from CHAPS
Backup battery supply
to CCONT
Backup battery supply
to CCONT
3.02 3.15 3.28 V
100 200 500 uA Vout@VBAT–0.2V
2 3.28 V
80 uA
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NSB–6
System Module
Power Distribution
In normal operation the baseband is powered from the phone‘s battery.
The battery consists of one Lithium–Ion cell. An external charger can be
used for recharging the battery and supplying power to the phone.
The baseband contains parts that control power distribution to whole
phone excluding those parts that use continuous battery supply. The battery feeds power directly to the CCONT and UI (buzzer and display and
keyboard lights).
The power management circuit CHAPS provides protection against overvoltages, charger failures and pirate chargers etc. that would otherwise
cause damage to the phone.
PAMS Technical Documentation
UI
(LCD,
backlights,
buzzer)
Baseband
RF
MAD2 +
MEMORY
RF supply voltages
VCobba
Vbb
CHRG_CTRL
VCORE
RTC backup
Battery connector
VB
CCONTCOBBA GJP
Vbatt
CHAPS
VChar
Charger & headset connector
Battery charging
The electrical specifications give the idle voltages produced by the acceptable chargers at the DC connector input. The absolute maximum input voltage is 30V due to the transient suppressor that is protecting the
charger input. At phone end there is no difference between a plug–in
charger or a desktop charger. The DC–jack pins and bottom connector
charging pads are connected together inside the phone.
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NSB–6
System Module
MAD
VBAT
MAD
CCONTINT
CCONT
Startup Charging
LIM
0R22
PWM_OUT
GND
ICHAR
VCHAR
VOUT
CHAPS
RSENSE
PWM
22k
VCH
GND
1n
TRANSCEIVER
1u
100k
10k
30V
2A
VIN
L_GND
CHARGER
When a charger is connected, the CHAPS is supplying a startup current
minimum of 130mA to the phone. The startup current provides initial
charging to a phone with an empty battery. Startup circuit charges the
battery until the battery voltage level is reaches 3.0V (+/– 0.1V) and the
CCONT releases the PURX reset signal and program execution starts.
Charging mode is changed from startup charging to PWM charging that is
controlled by the MCU software. If the battery voltage reaches 3.55V
(3.75V maximum) before the program has taken control over the charging, the startup current is switched off. The startup current is switched on
again when the battery voltage is sunken 100mV (nominal).
Parameter Symbol Min Typ Max Unit
VOUT Start– up mode cutoff limit Vstart 3.45 3.55 3.75 V
VOUT Start– up mode hysteresis
Vstarthys 80 100 200 mV
NOTE: Cout = 4.7 uF
Start–up regulator output current
Istart 130 165 200 mA
VOUT = 0V ... Vstart
Battery Overvoltage Protection
Output overvoltage protection is used to protect phone from damage.
The power switch is immediately turned OFF if the voltage in VOUT rises
above the selected limit VLIM1 or VLIM2.
Parameter Symbol LIM input Min Typ Max Unit
Output voltage cutoff limit
(during transmission or Li–
battery)
VLIM LOW 4.4 4.6 4.8 V
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NSB–6
System Module
The voltage limit (VLIM1 or VLIM2) is selected by logic LOW or logic
HIGH on the CHAPS (N101) VLIM input pin. VLIM is fixed low in hardware.
When the switch in output overvoltage situation has once turned OFF, it
stays OFF until the the battery voltage falls below VLIM and PWM = LOW
is detected. The switch can be turned on again by setting PWM = HIGH.
VCH
VCH<VOUT
VOUT
VLIM
PAMS Technical Documentation
t
SWITCH
PWM (32Hz)
ON OFF
t
ON
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Battery Removal During Charging
Output overvoltage protection is also needed in case the main battery is
removed when charger connected or charger is connected before the battery is connected to the phone.
With a charger connected, if VOUT exceeds VLIM, CHAPS turns switch
OFF until the charger input has sunken below Vpor (nominal 3.0V, maximum 3.4V). MCU software will stop the charging (turn off PWM) when it
detects that battery has been removed. The CHAPS remains in protection
state as long as PWM stays HIGH after the output overvoltage situation
has occured.
NSB–6
System Module
VCH
(Standard
Charger)
VOUT
PWM
SWITCH
Vpor
VLIM
4V
Vstart
”1”
”0”
ON
OFF
Droop depends on load
& C in phone
2
5
4
6
7
Istart off due to VCH<Vpor
Vstarthys
t
t
t
1.1Battery removed, (standard) charger connected, VOUT rises (follows charger voltage)
2. VOUT exceeds limit VLIM(X), switch is turned immediately OFF
3.3VOUT falls (because no battery) , also VCH<Vpor (standard chargers full–rectified
output). When VCH > Vpor and VOUT < VLIM(X) –> switch turned on again (also PWM
is still HIGH) and VOUT again exceeds VLIM(X).
4. Software sets PWM = LOW –> CHAPS does not enter PWM mode
5. PWM low –> Startup mode, startup current flows until Vstart limit reached
6. VOUT exceeds limit Vstart, Istart is turned off
7. VCH falls below Vpor
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System Module
PAMS Technical Documentation
PWM
When a charger is used, the power switch is turned ON and OFF by the
PWM input. PWM rate is 1Hz. When PWM is HIGH, the switch is ON and
the output current Iout = charger current – CHAPS supply current. When
PWM is LOW, the switch is OFF and the output current Iout = 0. To prevent the switching transients inducing noise in audio circuitry of the phone
soft switching is used.
Battery Identification
Different battery types are identified by a pulldown resistor inside the battery pack. The BSI line inside transceiver has a 100k pullup to VBB. The
MCU can identify the battery by reading the BSI line DC–voltage level
with a CCONT (N100) A/D–converter.
Name Min Typ Max Unit Notes
BSI
0 2.8 V Battery size indication
100k pullup resistor to VBB in phone
SIM Card removal detection
(Treshold is 2.4V@VBB=2.8V)
68 kohm Indication of a BLB–2 battery (600 mAh Li–Ion)
22 kohm Indication resistor for a service battery
VBATT
BATTERY
BTEMP
BSI
R
s
BGND
2.8V
100k
10k
BSI
10n
SIMCardDetX
TRANSCEIVER
CCONT
MAD
Page 16
The battery identification line is used also for battery removal detection.
The BSI line is connected to a SIMCardDetX line of MAD2. SIMCardDetX
is a threshold detector with a nominal input switching level 0.85xVcc for a
rising edge and 0.55xVcc for a falling edge. The battery removal detection
is used as a trigger to power down the SIM card before the power is lost.
The BSI contact in the battery contact disconnects before the other contacts so that there is a delay between battery removal detection and supply power off.
E Nokia Mobile Phones Ltd.
Issue 1 06/2000
PAMS Technical Documentation
Vcc
0.850.05 Vcc
0.550.05 Vcc
SIMCARDDETX
GND
Battery Temperature
The battery temperature is measured with a NTC inside the battery pack.
The BTEMP line inside transceiver has a 100k pullup to VREF. The MCU
can calculate the battery temperature by reading the BTEMP line DC–
voltage level with a CCONT (N100) A/D–converter.
NSB–6
System Module
S
IGOUT
Pin Name Min Typ Max Unit Notes
3 BTEMP
0 1.4 V Battery temperature indication
100k pullup resistor to VREF in phone
Battery package has NTC pull down resis-
tor:
47k +/–5%@+25C , B=4050+/–3%
2.1
5
–5 5 % 100k pullup resistor tolerance
10
47 kohm Service battery value
BATTERY
3
20
VBATT
BSI
BTEMP
V
ms
Phone power up by battery (input)
Power up pulse width
TRANSCEIVER
VREF
100k
10k
BTEMP
CCONT
Issue 1 06/2000
R
NTC
T
BGND
E Nokia Mobile Phones Ltd.
Page 17
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