Block diagram v.RB5.0 ed.76 1
Block Diagram System v.RB5.0 ed.128 2
Schematic diagram RF-BB v.RB5.0 ed.20 3
Schematic Diagram UPP v.RB5.0 ed.26 4
Schematic Diagram UEM v. RB5.0 ed. 77 5
Schematic diagram M2M, PWR, LED v. RB5.0 ed.132 6
Schematic Diagram Memories v. RB5.0 ed.24 7
Schematic Diagram RF, v. RB5.0 ed. 163 8
Diagram of RF ground points, V. RB5.0 ed.34 9
Parts Placement 1/2 RL7_11 10
Parts Placement 2/2 RL7_11 11
Block diagram v.RB6.0 ed.79 12
Block Diagram System v.RB6.0 ed.131 13
Schematic diagram RF-BB v.RB6.0 ed.22 14
Schematic Diagram UPP v.RB6.0 ed.29 15
Schematic Diagram UEM v. RB6.0 ed. 80 16
Schematic diagram AIF, PWR, LED v. RB6.0 ed.135 17
Schematic Diagram Memories v. RB6.0 ed.32 18
Schematic Diagram R FGround points, v. RB6.0 ed. 168 19
Parts placement diagram, RL7_11a top 21
Parts Placement bottom RL7_11a Bottom 22
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PAMS Technical DocumentationData Module RL7
Glossary of Terms
ASICApplication Specific Integrated Circuit
BBBaseband
CSPChip Scale Package
DBDual band
DCS1800Digital Cellular system at 1800 MHz
DSPDigital Signal Processor
EMCElectromagnetic compatibility
EMIElectromagnetic Interference
FBUSAsynchronous Full Duplex Serial Bus
GSMGlobal System for Mobile communications
HSCSDHigh Speed Circuit Switched Data
LNA Low Noise Amplifier
M2MSystem Connector
MBUS1-wire half duplex serial bus
MCUMicro Controller Unit
MDIMCU-DSP Interface
PATransmit Power Amplifier
PCPersonal Computer
PWBPrinted Wiring Board
PCMPulse Code Modulation
PCM SIOSynchronous serial bus for PCM audio transferring
RFRadio Frequency
SIMSubscriber Identity Module
SMARTPCMCIA interface ASIC
The Data module baseband blocks provide the MCU, DSP, external memory interface and
digital control functions in the UPP ASIC . Power supply circuitry, charging, audio processing and RF control hard ware are in the UEM ASIC.
The purpose of the RF block is to receive and demodulate the radio frequency signal from
the base station and to transmit a modulated RF signal to the base station.
GSM Data Module RL7
The description of the RL7 data module is divided into Baseband and RF sections.
Baseband Module
TME-3 baseband supports a power saving function called "sleep mode". As the M2M system protocol link must be active at all time, only so called "light sleep" is activated intermittently. In this mode the MCU has been shut down but peripherals are active.
TME-3 powered externally and does not have battery and thus there is no need for
charger functions. The power supply is synchronous step down switching type.
Technical Summary
Main functionality of the baseband is implemented into two ASICs: UPP and UEM.
Issue 4 12/03Nokia Corporation.Page 7
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A
/
A
r
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Block Diagram
VBATRF
P
O
Voltage
input
AIF_3V3
W
E
VBAT
R
VCCAMVBB
Figure 1: Block diagram of RL7 module
Ostrich
Production
test patte rn
TEST
R&D test
structures
SIM
UI
UEM
UPP
AIF
Internal
RF-
antenna
BB
I
N
T
E
R
F
L
A
S
F
A
C
E
RF
External
antenna
connecto
H
GENIO-
UART
UPP ASIC provides the MCU, DSP, external memory interface and digital control functions. UEM ASIC contains power supply circuitry, charging, audio processing and RF control hardware.
Technical Summary
Baseband is running from power rails 2.8V analog voltage and 1.8V I/O voltage. UPP core
voltage Vcore can be lowered down to 1.0V, 1.3V and 1.5V. UEM includes 6 linear LDO
(low drop-out) regulators for baseband and 7 regulators for R F. It also includes 4 current
sources for biasing purposes and internal usage. UEM also includes SIM interface which
supports 3V SIM cards. TME-3 does not currently support 1.8 V SIMs.
The interface between the baseband and the RF section is handled by a UEM ASIC. The
UEM provides A/D and D/A conversion of the in-phase and quadrature receive and transmit signal paths and also A/D and D/A conversions of received and transmitted audio signals to and from the user interface. The UEM supplies the analog TXC and AFC signals to
RF section according to the UPP DSP digital control.
Data transmission between the UEM and the UPP is implemented using two serial busses, DBUS for DSP and CBUS for MCU. There are also separate signals for PDM coded
audio. Digital speech processing is handled by the DSP inside UPP ASIC. UEM is a dual
voltage circuit, the digital parts are running from the baseband supply 1.8V and the analog parts are running from the analog supply 2.78V. UEM uses also VBAT directly
FBUS
MBUS
NALOG
DIGITAL
UDIO
I/O
Page 8Nokia Corporation.Issue 4 12/03
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PAMS Technical DocumentationData Module RL7
The baseband supports external microphone inputs and speaker outputs. Input and output signal source selection and gain control is performed by the UEM according to control messages from the UPP. Analog and digital PCM audio are routed to M2M system
connector.
EMC shielding for baseband is implemented using metal lids. On the other side the module is shielded with PWB grounding. Heat generated by the circuitry is conducted out via
the PWB ground planes.
Modes of Ope ration
The TME-3 has three modes of operation:
•RS-232 Mode (M2M system mode)
•Application mode (AT command mode)
•User Control mode
Internally the RL7 module has the following operating modes:
•NO_SUPPLY
•POWER_OFF
•POWER_ON
•RESET
•SLEEP
•PROTECTION
RS232 mode
Fig. 2 shows TME-3 in RS-232 mode. TME-3 enters RS-232 mode in powerup when it
detects a 68k 1% pull-down resistor at M2M system connector pin 21.
In RS-232 mode TME-3 is connected to DAU-12 RS-232 adapter. The adapter provides a
standard RS-232 interface. Power for TME-3 and the adapter is fed through TME-3 DC
jack.
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Data Module RL7PAMS Techn i cal Documentation
Figure 2: TME-3 RS-232 mode
Voltage input
Application mode
In application mode TME-3 is connected to a user specific application. The mechanical
and electrical interface between application and TME-3 is the M2M system connector.
The application can be powered through M2M system or the application can deliver
power to TME-3.
Voltage input
TME-3
M2M
RS-232 adapter DAU-12
Figure 3: TME-3 in Application mode
TME-3
M2M
RS-232
Alternative voltage
input
User Control mode
In the user control mode the Nokia 30 GSM Connectivity Terminal is controlled by a
mobile phone. Text message templates that are sent from the mob ile to the Nokia 30
instruct the terminal, which in turn controls a device or machine attached to it through
the M2M System connector.
An example of a device attached to the Nokia 30 for wireless control would be a refrigerator. You might want to check the temperature of the refrigerator when out of town.
The temperature of the refrigerator could be altered with the mobile as well.
You could also turn off the lights of the apartment that you had accidentally left on by
sending a text message template.
There are three levels of access control for the User control mode.
Firstly, a message identifier entered when the terminal is used for the first time with the
Nokia 30 Configurator is only known by the person who entered it. This identifier begins
every text message template aimed to control the Nokia 30 and the application attached
to it.
User specific
application
Page 10Nokia Corporation.Issue 4 12/03
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PAMS Technical DocumentationData Module RL7
Secondly, it can be specified from which phone number the text message templates are
allowed.
Thirdly, a password can be used that is entered whenever a text message template is sent
to the Nokia 30.
Internal operation modes
A simplified flow chart of the internal operation modes of TME-3 below.
Figure 4: Internal operation modes
NO_SUPPLY
VBAT
appears
RESET
Thermal
shutdown
POWER_ONPROTECTIONSLEEP
Watchdog
bites
Watchdog
bites
POWER_OFF
Always
(forced by HW)
In NO_SUPPLY mode the phone has no supply voltage.
When battery voltage appears, TME-3 enters RESET mode. In TME-3, RESET mode leads
always to POWER_ON mode. During low activity TME-3 can switch f rom POWER_ON to
SLEEP mode. PROTECTION mode happens if the thermal shutdown of UEM regulators
triggers. PROTECTION mode leads immediately to POWER_OFF mode. TME-3 can enter
POWER_OFF mode also from POWER_ON or SLEEP modes if the UEM internal watchdog
elapses. POWER_OFF mode is not stationary.
In TME-3 there is a special power-up hardware, which essentially presses automatically
the power key as soon as it detects the POWER_OFF mode.
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Data Module RL7PAMS Techn i cal Documentation
Nominal and maximum ratings
Table 1: s
ParameterAbsolute Maximum Rating
Supply voltage maximum VBB15 V
DC input voltage (any signal pin *) -0.5 to 5.5V*
DC output source or sink current
(any signal pin)
Operating temperature range-10...+55 °C
Storage temperature range-40...+85 °C
< 430 mA< 5.2 W Transmitting 2 slots at full power +
< 350 mA< 4.2 WTransmitting 2 slots at full power +
External signals and connectors
This section describes the external and internal electrical connection and interface levels
on the baseband. The electrical interface specifications are collected into tables that
covers a connector or a defined interface.
The M2M system connector is 50 pin male connector. Connector connects the TME-3 to
an external applications, for example to the data-adapter. Connection can be made by
female type socket or ribbon cable connector.
in numbering of the M2M system connection
Odd pins are on the left side of the connector, i.e. 1, 3, 5, 7, etc. Even numbers on the
right side of the connector, i.e. 2, 4, 6, 8, etc. Pin 1 is at left top, pin 50 right bottom.
In ribbon cable connection the red stripe conductor of the cable marks pin connection 1.
Conductor numbering is then subsequent from 1 to 50 in the cable
DC connector
DC connector X100, described below, is a 3.2 mm DC jack type connector. VIN is connected to the central pin and the jacket is GND.
Table 5: DC connector pin
Signal NamePinNotes
GND3,4
VIN26.2 V – 14.0 V power feed
The connector circuitry composes a 2.0 A fuse and transient protection components.
Power jack tap is a positive (VIN) and border area is a ground (GND).
Page 14Nokia Corporation.Issue 4 12/03
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SIM connector
SIM connector X200
cards are not supported.
SIM
C5 C6 C7
C1C2C3
From Battery Type
From SIM Card contact
C8
C4
interface supports both 1.8V and 3V SI M cards. Note t hat 5V SIM
The contacts are described below:
Figure 6: SIM connector X200
GND
UPP
SIMDATA
SIMCLK
SIMRST
VSIM
BSI
SIMCardDet
GND
UEM
SIMIF
register
SIMIO
SIMClk
Data
UEM
digital
logic
SIMIO
SIMClk
Data
UIF Block
UEMInt
CBusDa
CBusEnX
CBusClk
NameCard pinDescription
VSIMC1SIM voltage supply 1.8/3.0V
SIMRSTC2SIM reset
SIMCLKC3SIM clock
SIMDATAC4SIM bidirectional data
VPPC5Unconnected.
GNDC7
External antenna connector
External antenna connector X502 interface is used to get better RF sign al in bad
receiving conditions.
Table 6: SIM connector
Figure 7: External antenna connector X502
Issue 4 12/03Nokia Corporation.Page 15
TME-3 Company Confidenti al
Data Module RL7PAMS Techn i cal Documentation
Functional Description
POWER
TME-3 operates with external DC wall power supply without a battery. The DC voltage
can be supplied either trough the DC jack or the M2M syste m connector. TME-3 has a
wide supply range high efficiency synchronous switched mode step-down converter,
which regulates the input voltage down to normal battery voltage level (3.6V).
Powe r Di st ri b ut i o n
Input voltage from DC connector or M2M system (VBB) is fed to step-down DC-DC converter, which regulates the voltage to 3.6V. The 3.6V is fed to DCT4 power management
circuit UEM (VBAT), to a 3V3 LDO and to the RF power amplifier (VBATRF). UEM regulates
VBAT further for baseband and RF. The 3V3 LDO is used for M2M system I/O buffers.
VBAT is fed to M2M system connector through a switch controlled by UPP.
An application can also draw current directly from the fused input voltage (VBB). The
available current depends on the input voltage and the power consumption of TME-3.
Typical maximum power consumption of TME-3 is less than 5.5 W (including the 300 mA
power feed to the application) in all circumstanc es. For example, if the input voltage is
12.0 V, the application can draw at most 2A - 5.5 W / 12 V = 1540 mA of current without blowing the fuse. However, it is advisable to derate the fuse current to 75% or 1.5 A,
which in the example above leaves ~1000 mA current for the application.
UEM
Figure 8: TME-3 power distribution.
VIN
6.5 V - 8.2 V
DC
Jack
4.75 V - 15.0 V power feed
from AIF
VBB
Power fail
indicator
DC/DC
Step-down
converter
680u
RFC
60R/100M
RFC
60R/100M
To UPP
Power feed/indication
to AIF
3 x 680u
VBAT
3 x 680u
Control
from UPP
VBATRF
LDO
Load switch
3V3
UEM
PA
AIF_3V3
BB
regulators
RF
regulators
300mA power
feed to AIF
AIF
I/O buffers
VCCAM
A
I
F
UEM is an energy management IC. In addition to energy management functionality the
UEM performs all the baseband mixed-signal functions.
User Interface
The TME-3 user interface consist of three two-coloured ( green/red) leds.
Page 16Nokia Corporation.Issue 4 12/03
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Six I/O pins from UPP port1, which is normally used for keyboard, are used for led control. Leds are buffered with digital transistors. shows the allocation of led control pins.
Table 7: UI LEDs
BitIO pin #FunctionDescription
P10LED1 – GreenLED Control: 1 = ON, 0 = OFF
P11LED1 – RedLED Control: 1 = ON, 0 = OFF
P12LED2 – GreenLED Control: 1 = ON, 0 = OFF
P13LED2 – RedLED Control: 1 = ON, 0 = OFF
P14LED3 – GreenLED Control: 1 = ON, 0 = OFF
P15LED3 – RedLED Control: 1 = ON, 0 = OFF
The leds are connected between VBAT and ground, and there is a current limiting resistor
and a transistor switch in series with every le d. An 1.8V level active high control signal
from UPP KEYB(10:0) switches the leds on and off. The current through a green led is
~15mA, and the current through a red led is ~5mA. This unsymmetry in led drive currents
ensures that the brightnesses of leds are equal.
UPP Processor
UPP contains ARM7 and LEAD3 MCU & DSP cores, RAM memory and custom logic.
The UPP block contains also an external flash memory. TME-3 flash size is 32Mbit.
M2M system
The M2M system block contains the M2M system connector and the glue logic needed to
make connections between application and the TME-3. The application interface of TME3 is the standard M2M application interfac e. The M2M system interface includes FBUS,
MBUS, GENIOUSART, analog and digital audios (multiplexed to same pins), DC input voltage, regulated 3.6V battery voltage and some general purpose I/Os.
All signal pins of M2M system are 5V tolerant. The 5V input voltage level is translated
down to 2.78V and 1.8V logic levels for UEM and UPP. The outputs of M2M system are
translated from UPP/UEM 1.8V and 2.78V levels to 3.3V level.
M2M system connector is a 50-pin male connector.
SIM
The SIM block contains a SIM card reader, which is connected to UEM SIM interface.
Audio
TME-3 does not have any built-in audio equipment, such as microphone or earpiece.
All audio signals are routed outside of TME-3 via M2M system connector to an external
audio accessory. The RAE-3 does not include or support vibra and buzzer.
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Data Module RL7PAMS Techn i cal Documentation
The audio control and processing is done by the UEM, which contains the audio codec.
The UPP contains MCU and DSP blocks, handling and processing the audio data signals.
The baseband supports one external microphone input and one external earphone output
or alternatively digital PCM lines.
Audio Interfaces
TME-3 has two different audio types, digital and analog audios. Those lines are multiplexed in M2M system connector, so there is only one physical audio interface.
Figure 9: Audio control diagram
AUDIOSELECT
Audio type selection is made by the audioselect signal from UPP genio pin 28. Audio lines
are multiplexed and demuxed by using NC7SB3157 and these components are controlled
by the audioselect signal
Earpiece electrical interface
Earpiece circuit includes two ferrite beads, two capacitors (27 pF -> 900 MHz cut-off filter) and two varistors for EMC protection. Earphone lines from the M2M system is connected to the differential output (EARP and EARN) in the UEM audio codec.
EARPCMRX
EAR+
PCMTX
AUDIOSELECT
MICPCMSCLK
MIC+
PCMDCLK
AIF 26
AIF 28
MUX 4/2
AIF 23
AIF 25
DEMUX 2/4
Microphone electrical interface
The microphone electrical circuit incl udes EMI/ESD protections which is placed near
the M2M system connector. MICB1 is connected to MIC1P via 1kΩ resistor.
Page 18Nokia Corporation.Issue 4 12/03
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RF Module
This RF module executes all RF functions of the module. RF circuitry is located on one
side (B-side) of the PCB.
EMC leakage is prevented by three m etal shields. The first one includes the Bluetooth
module. The second block includes the PA, antenna switch, LNAs and dual RX SAW. The
last block include the Hagar RF IC, VCO, VCTCXO, baluns and balanced filters.
Maximum height inside on RF-shields is 3 mm. Heat generated by t he circuitry will be
conducted out via the PWB ground planes.
Heat generated by the circuitry is conducted out via the PWB ground planes.
Normal and extreme voltages for RF block
There is no extreme voltage due of the internal power block and no battery use.
ParameterRating
Nominal voltage:3.6 V (generated in PWR block)
Lower extreme voltagesame as nominal
Higher extreme voltagesame as nomina l
RF Frequency Plan
Figure 10: RF frequency plan
925-960
MHz
1805-1880
MHz
f
f
f/4
HAGAR
f
f/2f/4
f
f/2
PLL
34203840
MHz
I-signal
I-signalI-signalI-signal
Q-signal
RX
1710-1785
MHz
880-915
MHz
26 MHz
VCTCXO
I-signal
Q-signal
TX
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Data Module RL7PAMS Techn i cal Documentation
DC characteristics
Regulators
The transceiver comprises a multif unction power management IC on baseband section,
which contains among other functions; 7 pcs of 2.78 V regulators and 4.8V up-switcher
for charge pump.
Use of the regulators can be seen in the Power Distribution Diagram. VrefRF01and
VrefRF02 are used as the reference voltages for HAGAR RF-IC, VrefRF01 (1.35V) for bias
reference and VrfeRF02 (1.35V) for RX ADC's reference.
Regulators (except VR2 and VR7) are connected to HAGAR. Different modes were
switched on by the aid of ser i a l bu s.
List of the supply voltages:
Volt. sourceLoad
VR1PLL charge pump (4,8 V)
VR2TX modulator
VR3VCTCXO + buffer
VR4HAGAR IC (LNAs+mixer+DTOS)
VR5HAGAR IC (div+LO-buff+prescaler),
VR6HAGAR (Vdd_bb)
VR7VCO
VrefRF01ref. voltage for HAGAR
VrefRF02 ref. voltage for HAGAR
VbattRFPA
Typical current consumption:
Operation modeCurrent consumptionNotes
Pow er OFF < 10 uA Leakage current (dual PA)
RX 81 mA, peak Includes synthesizer current
(28 mA)
TX, without PA 138 mA, peak
TX, power level 5, EGSM900 1700 mA, peak
TX, power level 0, DCS1800 1200 mA, peak
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PAMS Technical DocumentationData Module RL7
Power Distribution Diagram
SOURCE
VR1
VR2
VR3
VR4
VR5
Figure 11: Power Distribution
4.75 V +/- 3.2 %
10 mA
2.78 V +/- 3 %
100 mA
2.78 V +/- 3 %
20 mA
2.78 V +/- 3 %
50 mA
2.78 V +/- 3 %
50 mA
LOAD
Charge pump in HAGAR
TX IQ modulator, pow er
control opamp in
Hagar
VCTCXO
VCTCXO buffer in Haga r
E-GSM & DCS LNA
RX mixer in Hagar
DTOS in Hagar
PLL in Hagar
UEM
VR6
VR7
VrefRF01
VrefRF02
VBATT
2.78 V +/- 3 %
50 mA
2.78 V +/- 3 %
50 mA
1.35 v +/- 1.15 %
< 100 ua
1.35 V +/- 2 %
< 100 ua
3.2 - 4.5 V
1700 mA (max)
Dividers in Hagar
LO buffers in Hagar
Prescaler in Hagar
Power detector
BB section in Hagar
SHF VCO Module
Ref. volt. for Hagar RX
Ref. volt. for Hagar
Dual PA module
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Data Module RL7PAMS Techn i cal Documentation
RF characteristics
Main RF characteristics are listed in the table below:
ItemValues (E-GSM / GSM1800)
Receive frequency range925... 960 MHz / 1805...1880 MHz
Transmit frequency range880... 915 MHz / 1710...1785 MHz
Duplex spacing45 MHz / 95 MHz
Channel spacing200 kHz
Number of RF channels174 / 374
Power class4 (2 W) / 1 (1 W)
Number of power levels15 / 16
Transmitter characteristics
ItemValues (E-GSM/GSM1800)
TypeDirect conversion , nonlinear, FDMA/TDMA
LO frequency range3520...3660 MHz / 3420...3570 MHz
Output power 2 W / 1 W peak
Gain control rangemin. 30 dB
Maximum phase error (RMS/peak)max 5 deg./20 deg. peak
Receiver characteristics
ItemValues, E-GSM/GSM1800
TypeDirect conversion, Linear, FDMA/TDMA
LO frequencies3700...3840 MHz / 3610...3760 MHz
Typical 3 dB bandwidth+/- 91 kHz
Sensitivitymin. - 102 dBm (GSM1800 norm.cond. only)
Total typical receiver voltage gain
ADCs
Typical AGC dynamic range83 dB
Accurate AGC co ntrol range60 dB
Usable input dynamic range-102... -10 dBm
RSSI dynamic range-110... -48 dBm
Page 22Nokia Corporation.Issue 4 12/03
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PAMS Technical DocumentationData Module RL7
RF Block Diagram
26 MHz
RXI
INP_G_RX
INM_G_RX
Balanced
SAW
RXQ
VCP
VPP
VRF_RX
VLO/VPRE
INP_P_RX
INP_P_RX
VB_EXT
VREF_RX
SLE
SCLK
RESET
HAGAR
LNAB_P
LNAB_G
SDATA
LNA_D
LNA_P
VANT_2
VANT_1
LNA_G
Balanced
SAW
TXP
TXC
DET
VTXLO_P
VPCTRL_P
OUTP_P_TX
OUTM_P_TX
GND
TXIM
RF_TEMP
VTX_B_P
VP_D_SEL
TXIP
VTXLO_G
VPCTRL_G
OUTP_G_TX
OUTM_G_TX
TOUT
TXOP
TXOM
VCTCXO
VTX_B_G
VB_DET
VC_1
VC_2
INP_LO
INM_LO
OUT_CP
Balanced
SAW
MMIC
LNA
MMIC
LNA
Dual SAW
Dual PA
module
Dual
coupler
RX/TX switch
3420 - 3840 MHz
Internal
antenna
RF B l oc k Di agram
EGS M900/
GSM1800
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Frequency synthesizers
VCO frequency is locked with PLL into stable frequency source, which is a VCTCXO-module. VCTCXO is running at 26 MHz. Temperature drifting is con trolled with AFC voltage.
VCTCXO is locked into frequency of the base station. AFC is generated by baseband with
a 11 bit conventional DAC. 13MHz VCTC XO can also be used if multislot operations is not
needed.
Figure 12: Phase Locked Loop, PLL
26 MHz frequency reference
R
f
ref
f_out /
PHASE
M
DET.
CHARGE
PUMP
AFC-controlled VCTCXO
LP
f_out
VCO
Kd
M
Kvco
M = A(P+1) + (N-A)P=
= NP+A
PLL is located in HAGAR RF-IC and is controlled via serial RFBus. There is 64/65 (P/P+1)
prescaler, N- and A-divider, reference divider, phase detector and charge pump for the
external loop filter. SHF local signal, generated by a VCO-module, is fed through a
180deg balanced phase shifter to prescaler. Output of the prescaler is fed to N- and Adivider, which produces the input to phase detector.
Phase detector compares this signal to reference signal (400kHz), which is divided with
reference divider from VCTCXO output. Output of the phase detector is connected into
charge pump, which charges or discharges integrator capacitor in the loop filter depending on the phase of the measured frequency compared to reference frequency.
Loop filter filters out comparison pulses of phase detector and generates DC control voltage to VCO.
Dividers are controlled via serial bus. RFBus Data is for data, RFBusClk is serial clock for
the bus and RFBusEna1X is a latch enable, which stores new data into dividers.
LO-signal is generated by SHF VCO module. VCO has double frequency in GSM1800 and x
4 frequency in EGSM compared to actual RF channel frequency. LO signal is divided by
two or four in HAGAR (depending on system mode).
Receiver
Receiver is a direct conversion, dual band linear receiver. Received RF-signal from the
antenna is fed via a RF-antenna switch module to the 1st RX bandpass RF-SAW filters
and MMIC LNAs. RF-antenna switch module contains upperband and lowerband opera-
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PAMS Technical DocumentationData Module RL7
tion. The LNA amplified signal is fed to 2nd RX bandpass RF-SAW filters. Both 2nd RX
bandpass RF-SAW filters comprise un-bal/bal configuration to get the balanced (balanced) feed for Hagar.
Discrete LNAs have three gain levels. The first one is max. gain, the second one is about 30dB(GSM1800) and -25dB(EGSM900) below max. gain and the last one is off state. The
gain selection control of LNAs comes from HAGAR IC.
Differential RX signal is amplified and mixed directly down to BB frequency in HAGAR.
Local signal is generated with external VCO. The VCO signal is divided by 2 (GSM1800) or
by 4 (E-GSM900). PLL and dividers are in HAGAR-IC.
From the mixer output to ADC input RX signal is divided into I- and Q-signals. Accurate
phasing is generated in LO dividers. After the mixer DTOS amplifiers convert the differential signals to single ended. DTOS has two gain stages. The first one has constant gain of
12dB and 85kHz cut off frequency. The gain of second stage is controlled wit h contro l
signal g10. If g10 is high (1) the gain is 6dB and if g10 is low (0) the gain of the stage is
-4dB.
The active channel filters in HAGAR provides selectivity for channels (-3dB @ +/-91 kHz
typ.). Integrated base band filter is active-RC-filter with two off-chip capacitors. Baseband filter consists of two stages, DTOS and BIQUAD. DTOS is differential to single-ended
converter having 8dB or 18dB gain. BIQUAD is modified Sallen-Key Biquad.
Integrated resistors and capacitors are tunable. These are controlled with a digital control word. The correct control words that compensate for the process variations of integrated resistors and capacitors and of tolerance of off-chip capacitors are found with the
calibration circuit.
Next stage i n the r eceiv er cha in is a A GC-am plifier, also integrated into HAGAR. AGC has
digital gain control via serial mode bus. AGC-stage provi d es gain control range (40 dB,
10 dB steps) for the receiver and also the necessary DC compensation. Additional 10 dB
AGC step is implemented in DTOS stages.
DC compensation is made during DCN1 and DCN2 operations (controlled via serial bus).
DCN1 is carried out by charging the large external capacitors in AGC stages to a voltage
which cause a zero dc-offset. DCN2 set the signal offset to constant value (VrefRF_02
1.35 V). The VrefRF_02 signal is used as a zero level to RX ADCs.
Single ended filtered I/Q-signal is then fed to ADCs in BB. Input level for ADC is 1.45 Vpp
max.
Transmitter
Transmitter chain consists of two final frequency IQ-modulators fo r upper and lower
band, a dual power amplifier and a power control loop.
I- and Q-signals are generated by baseband. After post filtering (RC-net work) they go
into IQ-modulator in HAGAR. LO-signal for modulator is generated by VCO and is divided
Issue 4 12/03Nokia Corporation.Page 25
TME-3 Company Confidenti al
Data Module RL7PAMS Techn i cal Documentation
by 2 or by 4 depending on system mode. There are separate outputs one for EGSM and
one for GSM1800.
In EGSM branch there is a SAW filter before PA to attenuate unwanted signals and wideband noise from the Hagar IC.
The final amplification is realized with dual band power amplifier. It has two different
power chains one for EGSM and one for GSM1800. PA is able to produce over 2 W (0
dBm input level) in EGSM band and over 1 W (0 dBm input level) in upperband band into
50 ohm output. Gain control range is over 45 dB to get desired power levels and power
ramping up and down.
Any harmonics generated by the PA are filtered out with filtering in side the antenna
switch -module.
Power control circuitry consists of discrete power detector (common for lower and
upperband) and error amplifier in HAGAR. There is a direction al coupler connected
between PA output and antenna switch. It is a dual band type and has input and outputs
for both systems. Directional coupler takes a sample from the forward going power with
certain ratio. This signal is rectified in a schottky-diode and it produces a DC-signal after
filtering.
The possibility to improve efficiency in low power levels has been specified in power
amplifier module. The improved efficien cy will take place on power level 7 and lower in
EGSM. For this option there is control input line in PA module.
AFC function
AFC is used to lock the transceivers clock to frequency of the base station. AFC-voltage is
generated in BB with 11 bit DA-converter. There is a RC-filter in AFC control line to
reduce the noise from the converter. Settling time requirement for the RC-network
comes from signalling, how often PSW (pure sine wave) slots occur. AFC tracks base station frequency continuously, so transceiver has a stable frequency, because changes in
VCTCXO-output don't occur so fast (temperature).
Settling time requirement comes also from the start up-time allowed. When transceiver
is in sleep mode and "wakes" up to receive mode, there is only about 5 ms for the AFCvoltage to settle. When the first burst comes in system clock has to be settled into +/-
0.1 ppm frequency accuracy. The VCTCXO-module requires also 5 ms to settle into final
frequency. Amplitude rises into full swing in 1... 2 ms, but frequency settling time is
higher so this oscillator must be powered up early enough.
DC-compensation
DC compensation is made during DCN1 and DCN2 operations (controlled via serial bus).
DCN1 is carried out by charging the large external capacitors in AGC stages to a voltage
which cause a zero dc-offset. DCN2 set the signal offset to constant value (RXREF 1.35
V). The RXREF signal is used as a zero level to RX ADCs.
Page 26Nokia Corporation.Issue 4 12/03
Company ConfidentialTME-3
PAMS Technical DocumentationData Module RL7
Interfaces and Connectors
Antenna
The TME-3 uses an internal or external dual band antenna.
User Interface Features
The TME-3 does not include a display. All UI functions are performed by Leds located in
the A-cover.
*) Application module controllable
Start-up Operation:
Table 8: Start-up Operation:
LED 1LED 2Status LED Description
---Power off / silent mode
Green scanGreen scanGreen scanPower on, connecting to network
-Red blink-PIN query / new PIN query
-Red blinkRed blinkPUK query
Intensity of Field Strength:
Red blink--Non-acceptable<-105 dBm
Green Blink---105 … -100 dBm
Green--Weak-100 … -95 dBm
GreenGreen Blink- -95 … -90 dBm
GreenGreen-Moderate -90 … -85 dBm
GreenGreenGreen Blink -85 … -80 dBm
GreenGreenGreenGood>-80 dBm
Issue 4 12/03Nokia Corporation.Page 27
TME-3 Company Confidenti al
Data Module RL7PAMS Techn i cal Documentation
Normal Operation:
Table 9: Normal Oper ation:
LED 1LED 2Status LEDDescription
**Green In service
**Green blinkCall on
**Green blinkInc o mi n g call
**Green/Red blinkMessage received / Voice mail in box
**Red blinkMessage arriving and memory is full
*) Application module controllable in M2M System mode
Special Operation:
Table 10: Special Operation:
LED 1LED 2Status LEDDescription
Green/Red blinkGreen/Red blinkGreen/Red blinkInsert SIM card
Red blinkRed blinkRed blinkFailure, contact service
YellowYellowYellowInitialising
Page 28Nokia Corporation.Issue 4 12/03
Company ConfidentialTME-3
PAMS Technical DocumentationData Module RL7
Data Module RL7 Parts List
0201802 RL7 RF/Syst Module EDMS Issue: 5.0
Table 11: Parts list RL7_11
ItemCodeSideCoordinatesPart dataPart name, t ype
A19517089TopC7RF-SHIELD SHIELD_DMC04003
A39517138TopH8RF-SHIELDSHIELD_DMC04002
A49517137BottomN5RF-SHIELD 3 SHIELD_DMC04001
A59510791TopI4RF-SHIELD 2 SHIELD_DMC04000
A39510729TopH8Lid 4dmd07543
A49510728BottomN5Lid 3dmd07542
A59519722TopI1Lid 2dmd07511
B2004510219TopI532.768KHZ+-30PPM 9PFCRYSTAL_CX_4V
C1002320805BottomJ3Chipcap X5R 100N K 10V 04020402C
C1012320805BottomL3Chipcap X5R 100N K 10V 04020402C
C10 22320805BottomH3Chipcap X5R 100N K 10V 04020402C
C1032320805TopE1Chipcap X5R 100N K 10V 040 20402C
C1042320805TopH1Chipcap X5R 100N K 10V 040 20402C
C1052320805TopH2Chipcap X5R 100N K 10V 040 20402C
C1072610039BottomM2CHIPTCAP 68U M 25V 7.3X4.3X4.1TANT_TPSE
C1092320783TopI4Chipcap X7R 33N K 10V 04020402C
C1102320783TopI4Chipcap X7R 33N K 10V 04020402C
C1112320744T opG2Chipcap X7R 10% 50V 04020402C
C1122320744T opG1Chipcap X7R 10% 50V 04020402C
C1132320481BottomL3Chipcap X5R 1U K 6V3 06030603C
C1142312243BottomK2Chipcap X5R 4U7 K 6V3 08050805C
C1152610043BottomE4CHIPTCAP 680U R 4V0 7.3X4.3X3.8TANTAL_D4
C1162610043BottomF4CHIPTCAP 680U R 4V0 7.3X4.3X3.8TANTAL_D4
C1172610043BottomF5CHIPTCAP 680U R 4V0 7.3X4.3X3.8TANTAL_D4
C11823205 46BottomG3Chipcap 5% NP00402C
C11923205 46BottomH3Chipcap 5% NP00402C
C1202320 744TopO4Chipcap X7R 10% 50V 04020402C
C1212320805TopM4Chipcap X5R 100N K 10V 04020402C
C1232610043BottomM6CHIPTCAP 680U R 4V0 7.3X4.3X3.8TANTAL_D4
Issue 4 12/03Nokia Corporation.Page 29
TME-3 Company Confidenti al
Data Module RL7PAMS Techn i cal Documentation
Table 11: Parts list RL7_11
ItemCodeSideCoordinatesPart dataPart name, t ype
C1242610043BottomM8CHIPTCAP 680U R 4V0 7.3X4.3X3.8TANTAL_D4
C1262360001TopO4Chipcap X5R 330N K 10V 06030603C
C1272320568BottomN7Chipcap 5% X7R0402C
C1282320 744BottomN7Chipcap X7R 10% 50V 04020402C
C1292320 744TopJ1Chipcap X7R 10% 50V 04020402C
C1302320 744TopJ1Chipcap X7R 10% 50V 04020402C
C1312312243TopM5Chipcap X5R 4U7 K 6V3 08050805C
C1332320568TopM1Chipcap 5% X7R0402C
C1342320 744TopM1Chipcap X7R 10% 50V 04020402C
C1352320568TopJ1Chipcap 5% X7R0402C
C1362320 744BottomN2Chipcap X7R 10% 50V 04020402C
C1372610039BottomO2CHIPTCAP 68U M 25V 7.3X4.3X4.1TANT_TPSE
C1382320 744BottomM3Chipcap X7R 10% 50V 04020402C
C1392320568BottomI5Chipcap 5% X7R0402C
C2002320481TopH5Chipcap X5R 1U K 6V3 06030603C
C2012320 778TopH5Chipcap X7R 10% 16V 04020402C
C2022320481TopH5Chipcap X5R 1U K 6V3 06030603C
C2032320481TopG5Chipcap X5R 1U K 6V3 06030603C
C2042320481TopI5Chipcap X5R 1U K 6V3 06030603C
C2052320536TopI5Chipcap 5% NP00402C
C2062320536TopI4Chipcap 5% NP00402C
C20 72320481TopI3Chipcap X5R 1U K 6V3 06030603C
C2082320481TopG5Chipcap X5R 1U K 6V3 06030603C
C2092320805BottomI5Chipcap X5R 100N K 10V 04020402C
C2102320481BottomI5Chipcap X5R 1U K 6V3 06030603C
C2112320805TopI4Chipcap X5R 100N K 1 0V 04020402C
C2122320481BottomH5Chipcap X5R 1U K 6V3 06030603C
C2132320805BottomH4Chipcap X5R 100N K 10V 04020402C
C2142320481TopI4Chipcap X5R 1U K 6V3 06030603C
C2152320805BottomE5Chipcap X5R 100N K 10V 04020402C
C2162320481TopF4Chipcap X5R 1U K 6V3 06030603C
C2172320805TopG2Chipcap X5R 100N K 10V 04020402C
Page 30Nokia Corporation.Issue 4 12/03
Company ConfidentialTME-3
PAMS Technical DocumentationData Module RL7
Table 11: Parts list RL7_11
ItemCodeSideCoordinatesPart dataPart name, t ype
C2182320805TopH2Chipcap X5R 100N K 10V 04020402C
C2192320481TopG5Chipcap X5R 1U K 6V3 06030603C
C2202320481TopG5Chipcap X5R 1U K 6V3 06030603C
C2212320805TopG2Chipcap X5R 100N K 10V 04020402C
C2222320481TopF5Chipcap X5R 1U K 6V3 06030603C
C2232320805TopG2Chipcap X5R 100N K 10V 04020402C
C2242320481BottomF4Chipcap X5R 1U K 6V3 06030603C
C2252320491BottomG5Chipcap X7R 220N K 10V 06030603C
C2262320481BottomH6Chipcap X5R 1U K 6V3 06030603C
C2272320481TopF3Chipcap X5R 1U K 6V3 06030603C
C2282320481BottomG3Chipcap X5R 1U K 6V3 06030603C
C2292320481BottomF4Chipcap X5R 1U K 6V3 06030603C
C2302320481TopF3Chipcap X5R 1U K 6V3 06030603C
C2312320481BottomG3Chipcap X5R 1U K 6V3 06030603C
C2322320 744TopI3Chipcap X7R 10% 50V 04020402C
C2332320 744TopI3Chipcap X7R 10% 50V 04020402C
C2342320 744BottomH3Chipcap X7R 10% 50V 04020402C
C2352320 744TopI3Chipcap X7R 10% 50V 04020402C
C2362320481BottomG4Chipcap X5R 1U K 6V3 06030603C
C2372320481TopF4Chipcap X5R 1U K 6V3 06030603C
C2382320481BottomH4Chipcap X5R 1U K 6V3 06030603C
C2392320481TopF5Chipcap X5R 1U K 6V3 06030603C
C2402320481TopF4Chipcap X5R 1U K 6V3 06030603C
C2412320481TopF4Chipcap X5R 1U K 6V3 06030603C
C2422320481BottomG4Chipcap X5R 1U K 6V3 06030603C
C2432320481BottomG4Chipcap X5R 1U K 6V3 06030603C
C2442320481TopF3Chipcap X5R 1U K 6V3 06030603C
C2462320481TopF4Chipcap X5R 1U K 6V3 06030603C
C2472320481TopH2Chipcap X5R 1U K 6V3 06030603C
C3002320805TopJ3Chipcap X5R 100N K 10V 04020402C
C3012320805TopJ4Chipcap X5R 100N K 10V 04020402C
C3022320805TopK5Chipcap X5R 100N K 1 0V 04020402C