NEC NE960R200, NE961R200 Datasheet

PRELIMINARY DATA SHEET

N-CHANNEL GaAs MES FET

NE960R2 SERIES

0.2 W X, Ku-BAND POWER GaAs MES FET

DESCRIPTION

The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically sealed ceramic package. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• High Output Power : P

• High Linear Gain : 10.0 dB TYP.

• High Power Added Efficiency: 35 % TYP. @VDS = 9 V, I

o (1 dB)

= +25.0 dBm TYP.

ORDERING INFORMATION

Part Number Package Supplying Form NE960R200 NE961R200 NE960R275 75

Remark

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE960R200, NE960R275, NE961R200)

00 (CHIP)

ESD protective envelope

Dset

= 90 mA, f = 14.5 GHz

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. P13775EJ2V0DS00 (2nd edition) Date Published July 1999 N CP(K) Printed in Japan

The mark shows major revised points.

1998, 1999©

ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit

NE960R2 SERIES

Drain to Source Voltage V Gate to Source Voltage V Drain Current I Gate Forward Current I Gate Reverse Current I Total Power Dissipat i on P Channel Temperature T Storage Temperature T

NE961R200

Note

DS

GSO

D

GF

GR

T

ch

stg

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Test Condition MIN. TYP. MAX. Unit

Drain to Source Voltage V

DS

Gain Compression Gcomp Channel Temperature T

ch

ELECTRICAL CHARACTERISTICS

(TA = +25

°°°°

C, Unless otherwise specified, using NEC standard test fixture.)

15 V –7 V

0.35 A +2.5 mA –2.5 mA

Note

2.5 (2.1

)

175

–65 to +175

−

−−

9.0 9.0 V

3.0 dB

+130

W

°

C

°

C

°

C

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Saturated Drain Current I Pinch-off Voltage V Gate to Drain Break Down

BV

Voltage Thermal Resistance R

Output Power at Pin = +15 dBm P Output Power at 1 dB Gain

P

Compression Point Power Added Efficiency at

O (1dB)

P

η

Linear Gain G

NE961R200

Note

Remark

DC and RF performance is 100 % testing.

DSS

p

gd

th

out

o (1 dB)

add

L

VDS = 1.5 V, VGS = 0 V 0.09 0. 2 0.35 A VDS = 2.5 V, ID = 1 mA –2.5 –1.8 –0. 5 V Igd = 1 mA 15

Channel to Case

f = 14.5 GHz, VDS = 9.0 V

Ω

g

= 1 k

R

Dset

I

= 90 mA (RF OFF)

22.0 24.0

8.0 10.0

−−

−

−−

60

Note

)

(70

−

25.0

35

−

°

C/W

dBm dBm

V

%

dB

2

Preliminary Data Sheet P13775EJ2V0DS00

TYPICAL CHARACTERISTICS (TA = +25°°°°C)

OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER

NE960R2 SERIES

30

25

(dBm)

out

20

Output Power P

15

10

51015

200

f = 14.5 GHz (1 tone),

DS

= 9 V, I

Dset

V

g

= 1 kΩ

R

= 90 mA

20 25

Input Power Pin (dBm)

DRAIN CURRENT AND GAIN vs. INPUT POWER

60

45

(%)

add

η

30

Power Added Efficiency

15

0

14

150

(mA)

D

100

50

Drain Current I

0

5 10152025

1.5

1.0

(mA)

g

0.5

0.0

Gate Current I

–0.5

5 10152025

in

Input Power P

(dBm)

GATE CURRENT vs. INPUT POWER

in

Input Power P

(dBm)

12

10

Gain (dB)

8

6

Preliminary Data Sheet P13775EJ2V0DS00

3

TYPICAL S-PARAMETER [NE960R275]

NE960R2 SERIES

TEST CONDITIONS: VDS = 9 V, I

FREQUENCY S

11

Dset

= 90 mA

21

S

12

S

22

S

GHz MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.)

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0

13.0

14.0

15.0

16.0

0.89

0.86

0.85

0.84

0.81

0.83

0.81

0.75

0.71

0.62

0.48

0.54

0.69

0.80

0.81

–113 –129 –138 –140 –144 –152 –163 –176

166 140

86

20 –20 –45 –66

3.99

2.88

2.29

1.99

1.78

1.77

1.82

1.89

2.12

2.42

2.50

2.32

1.77

1.30

1.03

98 80 65 51 39 27 15

–19 –44

–78 –113 –144 –166

167

0.057

0.058

0.057

0.059

0.060

0.062

0

0.062

0.064

0.072

0.074

0.065

0.049

0.040

0.039

34 15 10

–17 –46

–88 –132 –176

149

0.42

0.46

0.43 7 5 3 3 1 0

0.41

0.44

0.49

0.53

0.52

0.47

0.45

0.50

0.56

0.59

0.61

0.67

START 2 GHz, STOP 16 GHz, STEP 1 GHz

11

0.5

S

1.0

2.0 +135° +45°

S

+90°

12

–79 –85

–94 –110 –125 –135 –141 –150 –167

164

129

94 68 44 27

0.5 1.0 2.0

0

16 GHz

2 GHz

–0.5

–1.0

S

21

+90°

+135° +45°

±180° 0°

–135°

2 GHz

16 GHz

–90°

–2.0

R

max.

R

= 1

–45°

= 5

16 GHz

∞

±180° 0

–135°

–90°

22

S

1.0

0.5 16 GHz

0.5 1.0 2.0

0

2 GHz

–0.5

–1.0

2 GHz

–45°

R

max.

2.0

–2.0

R

max.

= 0.1

∞

= 1

4

Preliminary Data Sheet P13775EJ2V0DS00