NEC NE8500100, NE8500199 Datasheet
PRELIMINARY DATA SHEET
4.0 MIN BOTH LEADS
SOURCE
GATE
DRAIN
0.6 ±0.1
5.2 ±0.3
6.0 ±0.2
11.0 ±0.3
15.0 ±0.3
0.1
1.2
0.2 MAX.
1.0 ±0.1
2.2 ±0.3
2 PLACES
φ
4.3 ±0.2
1.7 ±0.15
4.0
5.0 MAX.
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator
applications and so on.
NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
has a PHS. (Plated Heat Sink)
NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
• Class A operation
• High power output
• High reliability
PHYSICAL DIMENSIONS
NE8500100 (CHIP) (unit: µm)
SELECTION CHART
PERFORMANCE SPECIFIED
PART NUMBER FORM
NE8500100(*) chip 28.5 min 9.0 typ 2.0 to 10
NE8500100-WB
NE8500100-RG
NE8500199 package 28.5 min 9.0 typ 2.0 to 10
* WB, RG indicate a type of containers for chips.
WB: black carrier, RG: ring,: gel-pack,
** Specified at the condition at the last page.
Pout (**)GL (**) USABLE
(dBm) (dB) FREQUENCY
(GHz)
170
65
100
100
100
780
PACKAGE CODE-99 (unit: mm)
146
640
Document No. P10968EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSX 15 V
Gate to Drain Voltage V
GDX –18 V
Gate to Source Voltage VGSX –12 V
Total Power Disipation(*) PT 6.0 W
Drain Current I
D 1.12 A
Gate Current IG 6.0 mA
Channel Temperature Tch 175 ˚C
Storage Temperature T
stg –65 to 175 ˚C
RECOMMENDING OPERATION RANDGE
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Drain to Source Voltage VDS 9–10V
Channel Temperature Tch – – 130 ˚C
Input Power Gcomp – – 3 dBcomp
Gate Resistance Rg – – 1 kΩ
NE85001 SERIES
*TC = 25 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Saturated Drain Current Idss 430 – 860 mA Vds = 2.5 V, Vgs = 0 V
Pinch-off Voltage VP –3.0 – –1.0 V Vds = 2.5 V, Ids = 4 mA
Transconductance gm – 300 – mS Vds = 2.5 V, Ids = Idss
Thermal Resistance Rth – – 30 ˚C/W
PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)
NE8500100
PART NUMBER
PACKAGE CODE
CHARACTERISTIC SYMBOL
Output Power PO
Gate to source Igs
Current
NE8500100-WG
NE8500100-RG
CHIP
MIN. TYP. MAX.
28.5 – –
–2.0 – 2.0
NE8500199
99
MIN. TYP. MAX.
28.5 – –
–2.0 – 2.0
UNIT
dBm
mA
TEST CONDITIONS
f = 7.2 GHz
Vds = 10 V
Ids = 200 mA set
Rg = 1 kΩ
Pin = 21.0 dBm(*)
Linear Gain GL
–9–
* Pin for Pout specification.
** The same conditions as the above except this.
2
–9–
dB
Pin ≤ 11 dBm (**)
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