NEC NE76118, NE76118-T1, NE76118-T2 Datasheet

DATA SHEET

DATA SHEET

L to S BAND LOW NOISE AMPLIFIER

N-CHANNEL GaAs MES FET

GaAs MES FET

NE76118

DESCRIPTION

NE76118 is a n-channel GaAs MES FET housed in MOLD package.

FEATURES

• Low noise figure
NF = 0.8 dB TYP. at f = 2 GHz

• High associated gain
Ga = 13.5 dB TYP. at f = 2 GHz

• Gate width : Wg = 400 Pm

• 4 pins super mini mold

• Tape & reel packaging only available

ORDERING INFORMATION

PART
NUMBER

NE76118-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin 3 (Source),

NE76118-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin 1 (Source),

QUANTITY PACKING STYLE

Pin 4 (Drain) face to perforation side of the
tape.

Pin 2 (Gate) face to perforation side of the
tape.

PACKAGE DIMENSIONS

in millimeters

2.1±0.2

1.25±0.1

+0.1

–0.05

V52

12

0 to 0.1

PIN CONNECTIONS

1. Source

2. Gate

3. Source

4. Drain

(1.25)

2.0±0.2

0.9±0.1

0.650.60

+0.1

0.3

–0.05

0.4

0.3

+0.1

–0.05

0.3
(1.3)

+0.1

–0.05

43

0.3

+0.1

–0.05

0.15

* Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs. (Part No.: NE76118)

ABSOLUTE MAXIMUM RATINGS (TA = 25

Drain to Source Voltage V
Gate to Source Voltage V
Gate to Drain Voltage V
Drain Current I
Total Power Dissipation P
Channel Temperature T
Storage Temperature T

Document No. P11129EJ2V0DS00 (2nd edition)
Date Published January 1997 N
Printed in Japan

DS
GSO
GDO

D

tot
ch

stg

5.0 V
–5.0 V
–6.0 V

DSS

I
130 mW
150

–65 to +150

C)

qqqq

mA

C

q

C

q

1996©

RECOMMENDED OPERATING CONDITION (TA = 25 qqqqC)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. Unit

NE76118

Drain to Source Voltage V
Drain Current I
Input Power P

DS

D

in

34V

10 20 mA

0 dBm

ELECTRICAL CHARACTERISTICS (TA = 25 qqqqC)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Gate to Source Leak Current I
Saturated Drain Current I
Gate to Source C u t off Voltage V
Transconductance gm 20 45 ð mS VDS = 3 V, ID = 10 mA
Noise Figure NF 0.8 dB f = 2 GHz
Associated Gain Ga 13.5 dB
Noise Figure NF 0.9 1.4 dB f = 4 GHz
Associated Gain Ga 9.5 10.5 dB

DSS

I

rank is specified as follows.
K : 30 to 100 mA
M : 50 to 100 mA

GSO

DSS

GS(off)

ðð10

P

AVGS = ð5 V

30 ð 100 mA VDS = 3 V, VGS = 0 V

ð0.5 ðð3.0 V VDS = 3 V, ID = 100 PA

VDS = 3 V

D

= 10 mA,

I

2

TYPICAL CHARACTERISTICS (TA = 25 qqqqC)

NE76118

TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

250

80

200

VGS = 0 V

60

150

100

- Total Power Dissipation - mW

50

tot

P

40

- Drain Current - mA

D

I

20

–0.2 V

–0.4 V

–0.6 V

–0.8 V
–1.0 V

00

50 100 150 200

A

- Ambient Temperature - ¡C

T

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

12345

VDS - Drain to Source Voltage - V

FORWARD INSERTION GAIN vs.
DRAIN CURRENT

V

80

DS

60

40

- Drain Current - mA

D

I

20

0
–2.0 –1.0 0

GS

- Gate to Source Voltage - V

V

= 3 V

20

20

15

15

10

10

Forward Insertion Gain - dB

2

|

21S

5

5

|S

0

12 10753

D

- Drain Current - mA

I

VDS = 3 V

f = 1 GHz

f = 2 GHz

20

3