The MM54HC164/MM74HC164 utilizes advanced silicongate CMOS technology. It has the high noise immunity and
low consumption of standard CMOS integrated circuits. It
also offers speeds comparable to low power Schottky devices.
This 8-Bit shift register has gated serial inputs and CLEAR.
Each register bit is a D-type master/slave flip flop. Inputs A
& B permit complete control over the incoming data. A low
at either or both inputs inhibits entry of new data and resets
the first flip flop to the low level at the next clock pulse. A
high level on one input enables the other input which will
then determine the state of the first flip flop. Data at the
serial inputs may be changed while the clock is high or low,
but only information meeting the setup and hold time requirements will be entered. Data is serially shifted in and out
of the 8-Bit register during the positive going transition of
the clock pulse. Clear is independent of the clock and accomplished by a low level at the CLEAR input.
The 54HC/74HC logic family is functionally as well as pinout compatible with the standard 54LS/74LS logic family.
All inputs are protected from damage due to static discharge by internal diode clamps to V
Features
Y
Typical operating frequency: 50 MHz
Y
Typical propagation delay: 19 ns (clock to Q)
Y
Wide operating supply voltage range: 2 –6V
Y
Low input current: 1 mA maximum
Y
Low quiescent supply current: 80 mA maximum (74HC
Series)
indicated steady state input conditions were established.
e
Q
the clock; indicated a one-bit shift.
The level of QAor QGbefore the most recentutransition of
An,QGn
HH H Q
u
LX L Q
u
XL L Q
u
e
the level of QA,QB,orQH, respectively, before the
AOQBO
An
An
An
Q
Q
Q
Q
TL/F/5315– 2
H
HO
Gn
Gn
Gn
C
1995 National Semiconductor CorporationRRD-B30M105/Printed in U. S. A.
TL/F/5315
Page 2
Absolute Maximum Ratings (Notes1&2)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
CC
)
DC Input Voltage (VIN)
DC Output Voltage (V
OUT
)
Clamp Diode Current (IIK,IOK)
DC Output Current, per pin (I
OUT
)
DC VCCor GND Current, per pin (ICC)
Storage Temperature Range (T
STG
b
b
)
b
0.5 toa7.0V
1.5 to V
CC
0.5 to V
CC
g
g
b
g
65§Ctoa150§C
a
1.5V
a
0.5V
20 mA
25 mA
50 mA
Supply Voltage (V
)26V
CC
DC Input or Output Voltage0V
(V
IN,VOUT
)
Operating Temp. Range (TA)
MM74HC
MM54HC
Input Rise or Fall Times
e
V
2.0V(tr,tf)1000ns
CC
e
V
4.5V500ns
CC
e
V
6.0V400ns
CC
Power Dissipation (PD)
(Note 3)600 mW
S.O. Package only500 mW
Lead Temp. (T
(Soldering 10 seconds)260
)
L
C
§
DC Electrical Characteristics (Note 4)
SymbolParameterConditionsV
CC
A
e
T
25§C
TypGuaranteed Limits
V
IH
Minimum High Level2.0V1.51.51.5V
Input Voltage4.5V3.153.153.15V
6.0V4.24.24.2V
V
IL
Maximum Low Level2.0V0.50.50.5V
Input Voltage**4.5V1.351.351.35V
6.0V1.81.81.8V
V
OH
Minimum High LevelV
Output Voltage
e
VIHor V
l
I
IN
OUT
IL
s
20 mA2.0V2.01.91.91.9V
l
4.5V4.54.44.44.4V
6.0V6.05.95.95.9V
e
V
VIHor V
IN
I
l
OUT
I
l
OUT
l
I
IN
OUT
e
V
OL
Maximum Low LevelV
Output Voltage
IL
s
4.0 mA4.5V4.23.983.843.7V
l
s
5.2 mA6.0V5.75.485.345.2V
l
VIHor V
IL
s
20 mA2.0V00.10.10.1V
l
4.5V00.10.10.1V
6.0V00.10.10.1V
e
V
VIHor V
IN
I
l
OUT
I
l
OUT
I
IN
I
CC
Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: Power Dissipation temperature derating Ð plastic ‘‘N’’ package:
Note 4: For a power supply of 5V
with this supply. Worst case V
I
**V
Maximum InputV
Current
Maximum QuiescentV
Supply CurrentI
g
and VILoccur at V
) occur for CMOS at the higher voltage and so the 6.0V values should be used.
OZ
limits are currently tested at 20% of VCC. The above VILspecification (30% of VCC) will be implemented no later than Q1, CY’89.
IL
IH
e
IN
e
IN
OUT
10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing
IL
s
4.0 mA4.5V0.20.260.330.4V
l
s
5.2 mA6.0V0.20.260.330.4V
l
VCCor GND6.0V
g
0.1
VCCor GND6.0V8.080160mA
e
0 mA
b
12 mW/§C from 65§Cto85§C; ceramic ‘‘J’’ package:b12 mW/§C from 100§Cto125§C.
e
5.5V and 4.5V respectively. (The VIHvalue at 5.5V is 3.85V.) The worst case leakage current (IIN,ICC, and
CC
74HC54HC
eb
T
40 to 85§CT
A
g
1.0
MinMaxUnits
V
§
§
Units
b
b
40
55
eb
A
55 to 125§C
g
CC
a
85
a
125
1.0mA
C
C
2
Page 3
AC Electrical Characteristics V
CC
e
5V, T
SymbolParameterConditionsTyp
f
MAX
t
PHL,tPLH
t
PHL,tPLH
t
REM
t
S
t
H
t
W
Maximum Operating30MHz
Frequency
Maximum Propagation1930ns
Delay, Clock to Output
Maximum Propagation2335ns
Delay, Clear to Output
Minimum Removal Time,
Clear to Clock
Minimum Setup Time1220ns
Data to Clock
Minimum Hold Time15ns
Clock to Data
Minimum Pulse Width1016ns
Clear or Clock
e
A
b
20 ns
25§C, C
Guaranteed
e
L
Limit
15 pF, t
r
e
Units
e
t
6ns
f
AC Electrical Characteristics C
e
L
SymbolParameterConditionsV
f
MAX
t
PHL,tPLH
t
PHL,tPLH
t
REM
t
S
t
H
t
W
t
THL,tTLH
tr,t
f
C
PD
C
IN
Note 5: CPDdetermines the no load dynamic power consumption, P
Maximum Operating2.0V543MHz
Frequency4.5V272118MHz
Maximum Propagation2.0V115175218254ns
Delay, Clock to Output4.5V13354451ns
Maximum Propagation2.0V140205256297ns
Delay, Clear to Output4.5V28415159ns
Minimum Removal Time2.0Vb7000ns
Clear to Clock4.5V
Minimum Setup Time2.0V25100125150ns
Data to Clock4.5V14202530ns
Minimum Hold Time2.0Vb2555ns
Clock to Data4.5V0555ns
Minimum Pulse Width2.0V2280100120ns
Clear or Clock4.5V11162024ns
Maximum Output2.0V7595110ns
Rise and Fall Time4.5V151922ns
Maximum Input Rise and2.0V100010001000ns
Fall Time4.5V500500500ns
Power Dissipation(per package)5.0V 150pF
Capacitance (Note 5)
Maximum Input5101010pF
Capacitance
D
e
CC
e
t
6 ns (unless otherwise specified)
r
f
e
T
25§C
A
eb
T
A
74HC54HC
40 to 85§CT
eb
A
55 to 125§C
50 pF, t
TypGuaranteed Limits
6.0V312420MHz
6.0V20303844ns
6.0V24354451ns
b
3000ns
b
6.0V
2000ns
6.0V12172125ns
6.0V1555ns
6.0V10141820ns
6.0V131619ns
6.0V400400400ns
2
e
CPDV
faICCVCC, and the no load dynamic current consumption, I
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
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systems which, (a) are intended for surgical implantsupport device or system whose failure to perform can
into the body, or (b) support or sustain life, and whosebe reasonably expected to cause the failure of the life
failure to perform, when properly used in accordancesupport device or system, or to affect its safety or
with instructions for use provided in the labeling, caneffectiveness.
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