National Semiconductor MM54HC74A, MM74HC74A Service Manual

MM54HC74A/MM74HC74A Dual D Flip-Flop with Preset and Clear
General Description
The MM54HC74A/MM74HC74A utilizes advanced silicon­gate CMOS technology to achieve operating speeds similar to the equivalent LS-TTL part. It possesses the high noise immunity and low power consumption of standard CMOS integrated circuits, along with the ability to drive 10 LS-TTL loads.
This flip-flop has independent data, preset, clear, and clock inputs and Q and Q data input is transferred to the output during the positive-go­ing transition of the clock pulse. Preset and clear are inde­pendent of the clock and accomplished by a low level at the appropriate input.
outputs. The logic level present at the
The 54HC/74HC logic family is functionally and pinout com­patible with the standard 54LS/74LS logic family. All inputs are protected from damage due to static discharge by inter­nal diode clamps to V
Features
Y
Typical propagation delay: 20 ns
Y
Wide power supply range: 2 –6V
Y
Low quiescent current: 40 mA maximum (74HC Series)
Y
Low input current: 1 mA maximum
Y
Fanout of 10 LS-TTL loads
and ground.
CC
MM54HC74A/MM74HC74A Dual D Flip-Flop with Preset and Clear
January 1988
Connection and Logic Diagrams
Dual-In-Line Package
TL/F/5106– 1
Order Number MM54HC74A or MM74HC74A
Truth Table
Inputs Outputs
PR CLR CLK D Q Q
LH XXHL HL XXLH LL XXH*H* HH HH H H L X Q0 Q
Note: Q0ethe level of Q before the indicated input condi- tions were established.
* This configuration is nonstable; that is, it will not persist when preset and clear inputs return to their inactive (high) level.
HH L
u
LL H
u
0
TL/F/5106– 2
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
TL/F/5106
Absolute Maximum Ratings (Notes1&2)
Operating Conditions
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Supply Voltage (V
CC
)
DC Input Voltage (VIN)
DC Output Voltage (V
OUT
)
Clamp Diode Current (IIK,IOK)
DC Output Current, per pin (I
OUT
)
DC VCCor GND Current, per pin (ICC)
Storage Temperature Range (T
STG
b
b
)
b
0.5 toa7.0V
1.5 to V
CC
0.5 to V
CC
g
g
b
g
65§Ctoa150§C
a
1.5V
a
0.5V
20 mA
25 mA
50 mA
Supply Voltage (V
)26V
CC
DC Input or Output Voltage 0 V
(V
)
IN,OUT
Operating Temp. Range (TA)
MM74HC MM54HC
Input Rise or Fall Times
e
V
2.0V(tr,tf) 1000 ns
CC
e
V
4.5V 500 ns
CC
e
V
6.0V 400 ns
CC
Power Dissipation (PD)
(Note 3) 600 mW S.O. Package only 500 mW
Lead Temp. (T
) (Soldering 10 seconds) 260§C
L
DC Electrical Characteristics (Note 4)
Symbol Parameter Conditions V
CC
A
e
T
25§C
Typ Guaranteed Limits
V
IH
Minimum High Level 2.0V 1.5 1.5 1.5 V Input Voltage 4.5V 3.15 3.15 3.15 V
6.0V 4.2 4.2 4.2 V
V
IL
Maximum Low Level 2.0V 0.5 0.5 0.5 V Input Voltage** 4.5V 1.35 1.35 1.35 V
6.0V 1.8 1.8 1.8 V
V
OH
Minimum High Level V Output Voltage
e
VIHor V
l
I
IN
OUT
IL
s
20 mA 2.0V 2.0 1.9 1.9 1.9 V
l
4.5V 4.5 4.4 4.4 4.4 V
6.0V 6.0 5.9 5.9 5.9 V
e
V
VIHor V
IN
I
l
OUT
I
l
OUT
l
I
IN
OUT
e
V
OL
Maximum Low Level V Output Voltage
IL
s
4.0 mA 4.5V 4.3 3.98 3.84 3.7 V
l
s
5.2 mA 6.0V 5.2 5.48 5.34 5.2 V
l
VIHor V
IL
s
20 mA 2.0V 0 0.1 0.1 0.1 V
l
4.5V 0 0.1 0.1 0.1 V
6.0V 0 0.1 0.1 0.1 V
e
V
VIHor V
IN
I
l
OUT
I
l
OUT
I
IN
I
CC
Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: Power Dissipation temperature derating Ð plastic ‘‘N’’ package:
Note 4: For a power supply of 5V
with this supply. Worst case V I
**V
Maximum Input V Current
Maximum Quiescent V Supply Current I
g
and VILoccur at V
) occur for CMOS at the higher voltage and so the 6.0V values should be used.
OZ
limits are currently tested at 20% of VCC. The above VILspecification (30% of VCC) will be implemented no later than Q1, CY’89.
IL
IH
e
IN
e
IN
OUT
10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing
IL
s
4.0 mA 4.5V 0.2 0.26 0.33 0.4 V
l
s
5.2 mA 6.0V 0.2 0.26 0.33 0.4 V
l
VCCor GND 6.0V
g
0.1
VCCor GND 6.0V 4.0 40 80 mA
e
0 mA
b
12 mW/§C from 65§Cto85§C; ceramic ‘‘J’’ package:b12 mW/§C from 100§Cto125§C.
e
5.5V and 4.5V respectively. (The VIHvalue at 5.5V is 3.85V.) The worst case leakage current (IIN,ICC, and
CC
74HC 54HC
eb
T
40 to 85§CT
A
g
1.0
Min Max Units
V
§
§
Units
b b
40 55
eb
A
55 to 125§C
g
CC
a
85
a
125
1.0 mA
C C
2
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