National Semiconductor MM54HC534, MM74HC534 Service Manual

Page 1
MM54HC534/MM74HC534 TRI-STATE
Octal D-Type Flip-Flop
É
with Inverted Outputs
These high speed Octal D-Type Flip-Flops utilize advanced silicon-gate CMOS technology. They possess the high noise immunity and low power consumption of standard CMOS integrated circuits, as well as the ability to drive 15 LS-TTL loads. Due to the large output drive capability and the TRI­STATE feature, these devices are ideally suited for interfac­ing with bus lines in a bus organized system.
These devices are positive edge triggered flip-flops. Data at the D inputs, meeting the setup and hold time requirements, are inverted and transferred to the Q going transitions of the CLOCK (CK) input. When a high logic level is applied to the OUTPUT CONTROL (OC) input, all outputs go to a high impedance state, regardless of what signals are present at the other inputs and the state of the storage elements.
Connection Diagram
outputs on positive
Dual-In-Line Package
January 1988
The 54HC/74HC logic family is speed, function, and pinout compatible with the standard 54LS/74LS logic family. All inputs are protected from damage due to static discharge by internal diode clamps to V
and ground.
CC
Features
Y
Typical propagation delay: 23 ns
Y
Wide operating voltage range: 2– 6V
Y
Low input current: 1 mA maximum
Y
Low quiescent current: 80 mA maximum
Y
Compatible with bus-oriented systems
Y
Output drive capability: 15 LS-TTL loads
MM54HC534/MM74HC534 TRI-STATE Octal D-Type Flip-Flop with Inverted Outputs
TL/F/5340– 1
Top View
Order Number MM54HC534 or MM74HC534
Truth Table
Output
Control
TRI-STATEÉis a registered trademark of National Semiconductor Corp.
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
Clock Data Output
L L LLXQ HXXZ
TL/F/5340
HL
u
LHQ
u
HeHigh Level, LeLow Level
XeDon’t Care
e
Transition from low-to-high
u
e
Z
High impedance state
e
The level of the output before steady state
0
0
input conditions were established
Page 2
Absolute Maximum Ratings (Notes1&2)
Operating Conditions
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
)
b
0.5 toa7.0V
b
1.5 to V
b
CC
0.5 to V
CC
b
65§Ctoa150§C
a
a
g
g
g
1.5V
0.5V
20 mA
35 mA
70 mA
Supply Voltage (V
CC
)
DC Input Voltage (VIN)
DC Output Voltage (V
OUT
)
Clamp Diode Current (IIK,IOK)
DC Output Current, per pin (I
OUT
)
DC VCCor GND Current, per pin (ICC)
Storage Temperature Range (T
STG
Supply Voltage (V
)26V
CC
DC Input or Output Voltage 0 V
(V
IN,VOUT
)
Operating Temp. Range (TA)
MM74HC MM54HC
Input Rise or Fall Times
e
V
2.0V(tr,tf) 1000 ns
CC
e
V
4.5V 500 ns
CC
e
V
6.0V 400 ns
CC
Power Dissipation (PD)
(Note 3) 600 mW S.O. Package only 500 mW
Lead Temperature (T
(Soldering 10 seconds) 260
)
L
C
§
DC Electrical Characteristics (Note 4)
e
T
25§C
Symbol Parameter Conditions V
CC
A
Typ Guaranteed Limits
V
Minimum High Level 2.0V 1.5 1.5 1.5 V
IH
Input Voltage 4.5V 3.15 3.15 3.15 V
6.0V 4.2 4.2 4.2 V
V
Maximum Low Level 2.0V 0.5 0.5 0.5 V
IL
Input Voltage** 4.5V 1.35 1.35 1.35 V
6.0V 1.8 1.8 1.8 V
V
Minimum High Level V
OH
Output Voltage
e
VIHor V
l
IN
I
OUT
IL
s
20 mA 2.0V 2.0 1.9 1.9 1.9 V
l
4.5V 4.5 4.4 4.4 4.4 V
6.0V 6.0 5.9 5.9 5.9 V
e
V
VIHor V
IN
I
l
OUT
I
l
OUT
l
IN
I
OUT
e
V
Maximum Low Level V
OL
Output Voltage
IL
s
6.0 mA 4.5V 4.2 3.98 3.84 3.7 V
l
s
7.8 mA 6.0V 5.7 5.48 5.34 5.2 V
l
VIHor V
IL
s
20 mA 2.0V 0 0.1 0.1 0.1 V
l
4.5V 0 0.1 0.1 0.1 V
6.0V 0 0.1 0.1 0.1 V
e
V
VIHor V
IN
I
l
OUT
I
l
OUT
I
I
Maximum Input V
IN
Current
Maximum TRI-STATE V
OZ
Output Leakage V Current
I
Maximum Quiescent V
CC
Supply Current I
Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: Power Dissipation temperature derating Ð plastic ‘‘N’’ package:
Note 4: For a power supply of 5V
designing with this supply. Worst case V
, and IOZ) occur for CMOS at the higher voltage and so the 6.0V values should be used.
I
CC
**V
limits are currently tested at 20% of VCC. The above VILspecification (30% of VCC) will be implemented no later than Q1, CY’89.
IL
e
IN
e
IN
OUT
e
IN
OUT
g
10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when
and VILoccur at V
IH
IL
s
6.0 mA 4.5V 0.2 0.26 0.33 0.4 V
l
s
7.8 mA 6.0V 0.2 0.26 0.33 0.4 V
l
VCCor GND 6.0V
VIHor VIL,OCeVIH6.0V
e
VCCor GND
g
0.1
g
0.5
VCCor GND 6.0V 8.0 80 160 mA
e
0 mA
b
12 mW/§C from 65§Cto85§C; ceramic ‘‘J’’ package:b12 mW/§C from 100§Cto125§C.
e
5.5V and 4.5V respectively. (The VIHvalue at 5.5V is 3.85V.) The worst case leakage current (IIN,
CC
74HC 54HC
eb
T
40 to 85§CT
A
g
1.0
g
5
Min Max Units
V
§
§
Units
b b
40 55
eb
A
CC
a
85
a
125
55 to 125§C
g
1.0 mA
g
10 mA
C C
2
Page 3
AC Electrical Characteristics V
CC
5V, T
e
A
25§C, t
e
e
t
6ns
r
f
e
Symbol Parameter Conditions Typ Guaranteed Limit Units
f
MAX
t
PHL,tPLH
t
PZH,tPZL
t
PHZ,tPLZ
t
S
t
H
t
W
Maximum Operating Frequency 35 MHz Maximum Propagation Delay Clock to Q C Maximum Output Enable Time R
Maximum Output Disable Time R
e
45 pF 23 32 ns
L
e
1kX 21 28 ns
L
e
45 pF
C
L
e
1kX 19 25 ns
L
e
5pF
C
L
Minimum Setup Time 10 20 ns Minimum Hold Time 0 5 ns Minimum Pulse Width 9 16 ns
AC Electrical Characteristics V
CC
e
2.0–6.0V, C
Symbol Parameter Conditions V
f
MAX
t
PHL,tPLH
t
PZH,tPZL
t
PHZ,tPLZ
t
S
t
H
t
W
t
THL,tTLH
tr,t
C
PD
C
IN
C
OUT
Note 5: CPDdetermines the no load dynamic power consumption, P
Maximum Operating C Frequency 4.5V 30 24 20 MHz
Maximum Propagation C Delay, Clock to Q C
Maximum Output Enable Time R
Maximum Output Disable Time R
Minimum Setup Time 2.0V 50 60 75 ns
Minimum Hold Time 2.0V 5 5 5 ns
Minimum Pulse Width 2.0V 80 100 120 ns
Maximum Output Rise C and Fall Time 4.5V 7 12 15 18 ns
Maximum Input Rise and Fall Time 1000 1000 1000 ns
f
Clock 500 500 500 ns
Power Dissipation (per flip-flop) Capacitance (Note 5) OCeV
Maximum Input Capacitance 5 10 10 10 pF Maximum Output Capacitance 15 20 20 20 pF
e
50 pF 2.0V 6 5 4 MHz
L
e
50 pF 2.0V 68 180 225 270 ns
L
e
150 pF 2.0V 110 230 288 345 ns
L
e
C
50 pF 4.5V 22 36 45 48 ns
L
e
C
150 pF 4.5V 30 46 57 69 ns
L
e
C
50 pF 6.0V 20 31 39 46 ns
L
e
150 pF 6.0V 28 40 50 60 ns
C
L
e
1kX
L
e
C
50 pF 2.0V 50 150 189 225 ns
L
e
150 pF 2.0V 80 200 250 300 ns
C
L
e
C
50 pF 4.5V 21 30 37 45 ns
L
e
150 pF 4.5V 29 40 50 60 ns
C
L
e
C
50 pF 6.0V 19 26 31 39 ns
L
e
C
150 pF 6.0V 25 35 44 53 ns
L
e
1kX 2.0V 50 150 189 225 ns
L
e
50 pF 4.5V 21 30 37 45 ns
C
L
e
50 pF 2.0V 25 60 75 90 ns
L
CC
e
Gnd 50 pF
OC
e
CPDV
D
CC
e
L
T
50 pF, t
e
25§C
A
e
e
t
6 ns (unless otherwise specified)
r
f
74HC 54HC
eb
T
40 to 85§CT
A
A
eb
55 to 125§C
Units
Typ Guaranteed Limits
6.0V 35 28 23 MHz
6.0V 19 26 31 39 ns
4.5V 9 13 15 ns
6.0V 9 11 13 ns
4.5V 5 5 5 ns
6.0V 5 5 5 ns
4.5V 16 20 24 ns
6.0V 14 18 20 ns
6.0V 6 10 13 15 ns
400 400 400 ns
30 pF
2
faICCVCC, and the no load dynamic current consumption, I
CC
e
CPDVCCfaICC.
S
3
Page 4
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number MM54HC534J or MM74HC534J
NS Package J20A
Molded Dual-In-Line Package (N)
LIFE SUPPORT POLICY
Order Number MM74HC534N
NS Package N20A
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness.
MM54HC534/MM74HC534 TRI-STATE Octal D-Type Flip-Flop with Inverted Outputs
be reasonably expected to result in a significant injury to the user.
National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.
1111 West Bardin Road Fax: ( Arlington, TX 76017 Email: cnjwge@tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408 Tel: 1(800) 272-9959 Deutsch Tel: ( Fax: 1(800) 737-7018 English Tel: (
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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a
49) 0-180-530 85 86 13th Floor, Straight Block, Tel: 81-043-299-2309
a
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a
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a
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