National Semiconductor MM54HC153, MM74HC153 Service Manual

MM54HC153/MM74HC153
Dual 4-Input Multiplexer

General Description

This 4-to-1 line multiplexer utilizes advanced silicon-gate
CMOS technology. It has the low power consumption and
high noise immunity of standard CMOS integrated circuits.
This device is fully buffered, allowing it to drive 10 LS-TTL
loads. Information on the data inputs of each multiplexer is
selected by the address on the A and B inputs, and is pre­sented on the Y outputs. Each multiplexer possesses a
strobe input which enables it when taken to a low logic lev­el. When a high logic level is applied to a strobe input, the
output of its associated multiplexer is taken low.

The 54HC/74HC logic family is functionally and pinout com­patible with the standard 54LS/74LS logic family. All inputs

January 1988

are protected from damage due to static discharge by inter­nal diode clamps to V

and ground.

CC

Features

Y

Typical propagation delay: 24 ns

Y

Wide power supply range: 2V –6V

Y

Low quiescent current: 80 mA maximum (74HC Series)

Y

Low input current: 1 mA maximum

Y

Fanout of 10 LS-TTL loads

MM54HC153/MM74HC153 Dual 4-Input Multiplexer

Connection Diagram

Truth Table

Select inputs A and B are common to both sections.

H

Dual-In-Line Package

Top View

Order Number MM54HC153 or MM74HC153

Select
Inputs

B A C0 C1 C2 C3 G Y

XXXXXX H L
LLLXXX L L
LLHXXX L H
LHXLXX L L
LHXHXX L H
HLXXLX L L
HLXXHX L H
HHXXXL L L
HHXXXH L H

e

high level, Lelow level, Xedon’t care.

Data Inputs Strobe Output

TL/F/5107– 1

C

1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

TL/F/5107

Absolute Maximum Ratings (Notes1&2)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Supply Voltage (V

CC

)

DC Input Voltage (VIN)

DC Output Voltage (V

OUT

)

Clamp Diode Current (IIK,IOK)

DC Output Current, per pin (I

OUT

)

DC VCCor GND Current, per pin (ICC)

Storage Temperature Range (T

STG

Power Dissipation (PD)

b

b

)

b

0.5 toa7.0V

1.5 to V

CC

0.5 to V

CC

g

g

b

g

65§Ctoa150§C

a

1.5V

a

0.5V

20 mA

25 mA

50 mA

Operating Conditions

Supply Voltage (V

DC Input or Output Voltage 0 V

(V

IN,VOUT

Operating Temp. Range (TA)

MM74HC
MM54HC

Input Rise or Fall Times

)26V

CC

)

e

V

2.0V(tr,tf) 1000 ns

CC

e

V

4.5V 500 ns

CC

e

V

6.0V 400 ns

CC

(Note 3) 600 mW
S.O. Package only 500 mW

Lead Temperature (T

(Soldering 10 seconds) 260

)

L

C

§

DC Electrical Characteristics (Note 4)

Symbol Parameter Conditions V

CC

A

e

T

25§C

Typ Guaranteed Limits

V

IH

Minimum High Level 2.0V 1.5 1.5 1.5 V
Input Voltage 4.5V 3.15 3.15 3.15 V

6.0V 4.2 4.2 4.2 V

V

IL

Maximum Low Level 2.0V 0.5 0.5 0.5 V
Input Voltage** 4.5V 1.35 1.35 1.35 V

6.0V 1.8 1.8 1.8 V

V

OH

Minimum High Level V
Output Voltage

e

VIHor V

l

I

IN

OUT

IL

s

20 mA 2.0V 2.0 1.9 1.9 1.9 V

l

4.5V 4.5 4.4 4.4 4.4 V

6.0V 6.0 5.9 5.9 5.9 V

e

V

VIHor V

IN

I

l

OUT

I

l

OUT

l

I

IN

OUT

e

V

OL

Maximum Low Level V
Output Voltage

IL

s

4.0 mA 4.5V 4.2 3.98 3.84 3.7 V

l

s

5.2 mA 6.0V 5.3 5.48 5.34 5.2 V

l

VIHor V

IL

s

20 mA 2.0V 0 0.1 0.1 0.1 V

l

4.5V 0 0.1 0.1 0.1 V

6.0V 0 0.1 0.1 0.1 V

e

V

VIHor V

IN

I

l

OUT

I

l

OUT

I

IN

I

CC

Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.

Note 2: Unless otherwise specified all voltages are referenced to ground.

Note 3: Power Dissipation temperature derating Ð plastic ‘‘N’’ package:

Note 4: For a power supply of 5V

with this supply. Worst case V
I

**V

Maximum Input V
Current

Maximum Quiescent V
Supply Current I

g

and VILoccur at V

) occur for CMOS at the higher voltage and so the 6.0V values should be used.

OZ

limits are currently tested at 20% of VCC. The above VILspecification (30% of VCC) will be implemented no later than Q1, CY’89.

IL

IH

e

IN

e

IN

OUT

10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing

IL

s

4.0 mA 4.5V 0.2 0.26 0.33 0.4 V

l

s

5.2 mA 6.0V 0.2 0.26 0.33 0.4 V

l

VCCor GND 6.0V

g

0.1

VCCor GND 6.0V 8.0 80 160 mA

e

0 mA

b

12 mW/§C from 65§Cto85§C; ceramic ‘‘J’’ package:b12 mW/§C from 100§Cto125§C.

e

5.5V and 4.5V respectively. (The VIHvalue at 5.5V is 3.85V.) The worst case leakage current (IIN,ICC, and

CC

74HC 54HC

eb

T

40 to 85§CT

A

g

1.0

Min Max Units

V

§

§

Units

b
b

40
55

eb

A

55 to 125§C

g

CC

a

85

a

125

1.0 mA

C
C

2