Motorola TP3005 Datasheet

1

TP3005MOTOROLA RF DEVICE DATA

The RF Line

  

The TP3005 is designed for 960 MHz base stations in both analog and digital
applications. It incorporates high value emitter ballast resistors, gold metalliza­tions and offers a high degree of reliability and ruggedness.

• Specified 26 Volts, 960 MHz Characteristics

Output Power = 4.0 Watts
Minimum Gain = 8.5 dB
Class AB
IQ = 60 mA

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CER

40 Vdc

Collector–Base Voltage V

CBO

48 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector Current — Continuous I

C

2.0 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

25

0.2

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

Operating Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (1) at 70°C Case R

θJC

7.0 °C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 15 mA, RBE = 75 Ω)

V

(BR)CER

45 — — Vdc

Emitter–Base Breakdown Voltage

(IC = 3.0 mAdc)

V

(BR)EBO

4.0 — — Vdc

Collector–Base Breakdown Voltage

(IE = 15 mAdc)

V

(BR)CBO

55 — — Vdc

Collector–Emitter Leakage

(VCE = 26 V, RBE = 75 Ω)

I

CER

— — 3.0 mA

ON CHARACTERISTICS

DC Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc)

h

FE

15 — 100 —

NOTE: (continued)

1. Thermal resistance is determined under specified RF operating condition.

Order this document

by TP3005/D



SEMICONDUCTOR TECHNICAL DATA



4.0 W, 960 MHz
UHF POWER

TRANSISTOR
NPN SILICON

CASE 319–07, STYLE 2

 Motorola, Inc. 1994

REV 6

TP3005
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 26 V, IE = 0, f = 1.0 MHz)

C

ob

7.5 — 12.5 pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCC = 26 V, P

out

= 4.0 W, ICQ = 60 mA, f = 960 MHz)

G

p

8.5 9.5 — dB

Load Mismatch

(VCC = 26 V, P

out

= 4.0 W, ICQ = 60 mA, Load VSWR = 5:1,

at all phase angles)

ψ

No Degradation in Output Power

Before and After Test

Collector Efficiency

(VCC = 26 V, P

out

= 4.0 W, f = 960 MHz)

η

c

50 55 — %

Power Saturation Pin = 1.0 W P

sat

7.0 — — W

Figure 1. 960 MHz Test Circuit

*Contact with RF Transistor
C1 — Capacitor Chip 0805 22 pF 5%

C2, C3, C6, C8 — Capacitor Chip 0805 330 pF 5%
C4, C7 — Capacitor Chip 0805 15 nF 5%
C5, C9 — Capacitor Chip 0805 6.0, 8.0 nF 35 V
D1, D2 — SMD Diode

R1 — Chip Resistor 2.2 Ω 1206 5%
R2 — Chip Resistor 51 Ω 0805 5%
R3 — Chip Resistor 470 Ω 0805 5%

R3 — to be adjusted for IQ = 60 mA

T1 — SMD Transistor BCX54 or Similar
T3 — Voltage Regulator 7805
Board Material — 0.8 mm, Epoxy Glass, Cu Clad, 2 Sides,
35 µm Thick

RF INPUT

50

Ω

RF OUTPUT

50

Ω

D.U.T.

C5

C4

C3

R2

R1

C1

D1

D2*

C6

R3

T1

T3

+V

CC

+

C9

C8

C7

C2

+