Motorola T2800M, T2800D, T2800B Datasheet

1

Motorola Thyristor Device Data

Triacs

Bidirectional Triode Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.

• Blocking Voltage to 600 Volts

• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and

Stability

• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability

• T2800 — Four Quadrant Gating

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted.)

Rating

Symbol Value Unit

Peak Repetitive Off-State Voltage

(1)

(TJ = –40 to +100°C, Gate Open)

T2800 B
D
M

V

DRM

200
400
600

Volts

RMS On-State Current (TC = +80°C)

(Conduction Angle = 360°)

I

T(RMS)

8 Amps

Peak Non-repetitive Surge Current

(One Full Cycle, 60 Hz, TJ = +80°C)

I

TSM

100 Amps

Circuit Fusing

(t = 8.3 ms)

I2t 40 A2s

Peak Gate Power (Pulse Width = 1 µs) P

GM

16 Watts

Average Gate Power P

G(AV)

0.35 Watt

Peak Gate Trigger Current (Pulse Width = 1 µs) I

GTM

4 Amps

Operating Junction Temperature Range T

J

–40 to +100 °C

Storage Temperature Range T

stg

–40 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

2.2 °C/W

1. V

DRM

for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Order this document

by T2800/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1995

T2800

SERIES

CASE 221A-04

(TO-220AB)

STYLE 4

TRIACs

8 AMPERES RMS

200 thru 600 VOLTS

MT1

G

MT2

REV 1

 

2 Motorola Thyristor Device Data

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

Peak Blocking Current

(VD = Rated V

DRM

, Gate Open) TC = 25°C

TC = 100°C

I

DRM

—
—

—
—

10

2

µA
mA

Peak On-State Voltage (Either Direction)*

(IT = 30 A Peak)

V

TM

— 1.7 2 Volts

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 12 Ohms)
MT2(+), G(+) T2800
MT2(+), G(–) T2800
MT2(–), G(–) T2800
MT2(–), G(+) T2800

I

GT

—
—
—
—

10
20
15
30

25
60
25
60

mA

Gate Trigger Voltage (Continuous dc) (All Polarities)

(VD = 12 Vdc, RL = 100 Ohms)
(RL = 125 Ohms, VD = V

DRM

, TC = 100°C)

V

GT

—

0.2

1.25
—

2.5
—

Volts

Holding Current (Either Direction)

(VD = 12 Vdc, Gate Open) T2800

I

H

— 15 30

mA

Gate Controlled Turn-On Time

(VD = Rated V

DRM

, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 µs)

t

gt

— 1.6 — µs

Critical Rate-of-Rise of Commutation Voltage

(VD = Rated V

DRM

, I

T(RMS)

= 8 A, Commutating di/dt = 4.1 A/ms,

Gate Unenergized, TC = 80°C)

dv/dt(c) — 10 — V/µs

Critical Rate-of-Rise of Off-State Voltage

(VD = Rated V

DRM

, Exponential Voltage Rise,

Gate Open, TC = 100°C)

T2800 B

D
M

dv/dt

100

—
60

—
—
—

—
—
—

V/µs

*Pulse Test: Pulse Width p 300 µs, Duty Cycle p 2%.

FULL CYCLE
SINUSOIDAL
WAVEFORM

0 2 4

100

85

90

80

TYPICAL

2

4

6

8

10

12

108642

FIGURE 2 – POWER DISSIPATION

0

MAXIMUM

0

I

T(RMS)

, RMS ON-STATE CURRENT (AMP)

6

95

FIGURE 1 – CURRENT DERATING

12

8

FULL CYCLE
SINUSOIDAL
WAVEFORM

I

T(RMS)

, RMS ON-STATE CURRENT (AMP)

T

C

, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)

°

P

(AV)

, AVERAGE POWER DISSIPATION (WATTS)