MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by T2500FP/D
Silicon Bidirectional
Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
•Blocking Voltage to 800 Volts
•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
•Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat Dissipation and Durability
MT2 
MT1
G
T2500FP
Series
ISOLATED TRIACs
THYRISTORS
6 AMPERES RMS
200 thru 800 VOLTS
CASE 221C-02 |
STYLE 3 |
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating |
Symbol |
Value |
Unit |
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Repetitive Peak Off-State Voltage(1) |
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VDRM |
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Volts |
(TJ = ±40 to +100°C, Gate Open) |
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T2500BFP |
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200 |
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T2500DFP |
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400 |
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T2500MFP |
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600 |
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T2500NFP |
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800 |
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On-State RMS Current (T = +80°C)(2) |
I |
T(RMS) |
6 |
Amps |
C |
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(Full Cycle Sine Wave 50 to 60 Hz) |
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Peak Non-repetitive Surge Current |
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ITSM |
60 |
Amps |
(One Full Cycle, 60 Hz, TC = +80°C) |
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Circuit Fusing Considerations |
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I2t |
40 |
A2s |
(t = 8.3 ms) |
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Peak Gate Power |
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PGM |
1 |
Watt |
(TC = +80°C, Pulse Width = 1 μs) |
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Average Gate Power |
PG(AV) |
0.2 |
Watt |
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(TC = +80°C, t = 8.3 ms) |
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Peak Gate Trigger Current (Pulse Width = 10 μs) |
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IGTM |
4 |
Amps |
RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) |
|
VISO |
1500 |
Volts |
Operating Junction Temperature Range |
|
TJ |
±40 to +100 |
°C |
Storage Temperature Range |
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Tstg |
±40 to +150 |
°C |
THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case(2) |
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RθJC |
2.7 |
°C/W |
Case to Sink |
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RθCS |
2.2(typ) |
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Junction to Ambient |
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RθJA |
60 |
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1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
2.The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
Motorola, Inc. 1995
T2500FP Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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Peak Off-State Current (Either Direction) |
IDRM |
Ð |
Ð |
2 |
mA |
(VD = Rated VDRM, TJ = 100°C, Gate Open) |
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Maximum On-State Voltage (Either Direction)* |
VTM |
Ð |
Ð |
2 |
Volts |
(IT = 30 A Peak) |
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Gate Trigger Current (Continuous dc) |
IGT |
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|
mA |
(VD = 12 Vdc, RL = 12 Ohms) |
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MT2(+), G(+) |
|
Ð |
10 |
25 |
|
MT2(+), G(±) |
|
Ð |
20 |
60 |
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MT2(±), G(±) |
|
Ð |
15 |
25 |
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MT2(±), G(+) |
|
Ð |
30 |
60 |
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Gate Trigger Voltage (Continuous dc) (All Quadrants) |
VGT |
Ð |
1.25 |
2.5 |
Volts |
(VD = 12 Vdc, RL = 12 Ohms) |
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(VD = VDROM, RL = 125 Ohms, TC = 100°C, All Trigger Models) |
|
0.2 |
Ð |
Ð |
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Holding Current (Either Direction) |
IH |
Ð |
15 |
30 |
mA |
(Main Terminal Voltage = 12 Vdc, Gate Open, |
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Initiating Current = 150 mA, TC = 25°C) |
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Gate Controlled Turn-On Time |
tgt |
Ð |
1.6 |
Ð |
μs |
(VD = Rated VDRM, IT = 10 A, |
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IGT = 160 mA, Rise Time p 0.1 μs) |
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Critical Rate-of-Rise of Commutation Voltage |
dv/dt(c) |
Ð |
10 |
Ð |
V/μs |
(VD = Rated VDRM, IT(RMS) = 6 A, |
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Commutating di/dt = 3.2 A/ms, |
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Gate Unenergized, TC = 80°C) |
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Critical Rate-of-Rise of Off-State Voltage |
dv/dt |
Ð |
100 |
Ð |
V/μs |
(VD = Rated VDRM, Exponential Voltage Rise, |
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Gate Open, TC = 100°C) |
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*Pulse Test: Pulse Width p 300 μs, Duty Cycle p 2%. |
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Quadrant Definitions
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MT2(+) |
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Quadrant II |
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Quadrant I |
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MT2(+), G(±) |
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MT2(+), G(+) |
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G(±) |
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G(+) |
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Quadrant III |
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Quadrant IV |
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MT2(±), G(±) |
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MT2(±), G(+) |
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MT2(±) |
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Trigger devices are recommended for gating on Triacs. They provide:
1.Consistent predictable turn-on points.
2.Simplified circuitry.
3.Fast turn-on time for cooler, more efficient and reliable operation.
Electrical Characteristics of Recommended
Bidirectional Switches
Usage |
|
General |
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Part Number |
MBS4991 |
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MBS4992 |
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VS |
6 ± 10 V |
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7.5 ± 9 V |
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IS |
350 μA Max |
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120 μA Max |
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VS1 ± VS2 |
0.5 V Max |
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0.2 V Max |
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Temperature |
0.02%/°C Typ |
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Coefficient |
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2 |
Motorola Thyristor Device Data |
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