Motorola T2800M, T2800D, T2800B Datasheet

1
Motorola Thyristor Device Data
Triacs
Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies.
Blocking Voltage to 600 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
T2800 — Four Quadrant Gating
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Symbol Value Unit
Peak Repetitive Off-State Voltage
(1)
(TJ = –40 to +100°C, Gate Open)
T2800 B D M
V
DRM
200 400 600
Volts
RMS On-State Current (TC = +80°C)
(Conduction Angle = 360°)
I
T(RMS)
8 Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = +80°C)
I
TSM
100 Amps
Circuit Fusing
(t = 8.3 ms)
I2t 40 A2s
Peak Gate Power (Pulse Width = 1 µs) P
GM
16 Watts
Average Gate Power P
G(AV)
0.35 Watt
Peak Gate Trigger Current (Pulse Width = 1 µs) I
GTM
4 Amps
Operating Junction Temperature Range T
J
–40 to +100 °C
Storage Temperature Range T
stg
–40 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
2.2 °C/W
1. V
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Order this document
by T2800/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
T2800
SERIES
CASE 221A-04
(TO-220AB)
STYLE 4
TRIACs
8 AMPERES RMS
200 thru 600 VOLTS
MT1
G
MT2
REV 1
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2 Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
Peak Blocking Current
(VD = Rated V
DRM
, Gate Open) TC = 25°C
TC = 100°C
I
DRM
— —
— —
10
2
µA mA
Peak On-State Voltage (Either Direction)*
(IT = 30 A Peak)
V
TM
1.7 2 Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 12 Ohms) MT2(+), G(+) T2800 MT2(+), G(–) T2800 MT2(–), G(–) T2800 MT2(–), G(+) T2800
I
GT
— — — —
10 20 15 30
25 60 25 60
mA
Gate Trigger Voltage (Continuous dc) (All Polarities)
(VD = 12 Vdc, RL = 100 Ohms) (RL = 125 Ohms, VD = V
DRM
, TC = 100°C)
V
GT
0.2
1.25 —
2.5 —
Volts
Holding Current (Either Direction)
(VD = 12 Vdc, Gate Open) T2800
I
H
15 30
mA
Gate Controlled Turn-On Time
(VD = Rated V
DRM
, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 µs)
t
gt
1.6 µs
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated V
DRM
, I
T(RMS)
= 8 A, Commutating di/dt = 4.1 A/ms,
Gate Unenergized, TC = 80°C)
dv/dt(c) 10 V/µs
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated V
DRM
, Exponential Voltage Rise,
Gate Open, TC = 100°C)
T2800 B
D M
dv/dt
100
— 60
— — —
— — —
V/µs
*Pulse Test: Pulse Width p 300 µs, Duty Cycle p 2%.
FULL CYCLE SINUSOIDAL WAVEFORM
0 2 4
100
85
90
80
TYPICAL
2
4
6
8
10
12
108642
FIGURE 2 – POWER DISSIPATION
0
MAXIMUM
0
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
6
95
FIGURE 1 – CURRENT DERATING
12
8
FULL CYCLE SINUSOIDAL WAVEFORM
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
T
C
, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
°
P
(AV)
, AVERAGE POWER DISSIPATION (WATTS)
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3
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221A-04
(TO–220AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.055 1.15 1.39 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 ––– 1.15 ––– Z ––– 0.080 ––– 2.04
A
K
L
V
G
D
N
Z
H
Q
FB
1 2 3
4
–T–
SEATING PLANE
S
R
J
U
T
C
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4 Motorola Thyristor Device Data
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T2800/D
*T2800/D*
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