Motorola T2500N, T2500M, T2500D, T2500B Datasheet
1
Motorola Thyristor Device Data
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Symbol Value Unit
Repetitive Peak Off-State Voltage
(1)
(TJ = –40 to +100°C, Gate Open)
T2500 B
D
M
N
V
DRM
200
400
600
800
Volts
On-State Current RMS (TC = +80°C)
(Full Cycle Sine Wave 50 to 60 Hz)
I
T(RMS)
6 Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80°C)
I
TSM
60 Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I2t 15 A2s
Peak Gate Power
(TC = +80°C, Pulse Width = 1 µs)
P
GM
16 Watts
Average Gate Power
(TC = +80°C, t = 8.3 ms)
P
G(AV)
0.2 Watt
Peak Gate Trigger Current (Pulse Width = 10 µs) I
GTM
4 Amps
Operating Junction Temperature Range T
J
–40 to +100 °C
Storage Temperature Range T
stg
–40 to +150 °C
1. V
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Order this document
by T2500/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
T2500
Series
CASE 221A-04
(TO-220AB)
STYLE 4
TRIACs
6 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
2 Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
2.7 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
Peak Blocking Current
(Rated V
DRM
, Gate Open,TJ = 100°C)
I
DRM
— — 2 mA
Maximum On-State Voltage (Either Direction)*
(IT = 30 A Peak)
V
TM
— — 2 Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 12 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
I
GT
—
—
—
—
10
20
15
30
25
60
25
60
mA
Gate Trigger Voltage (Continuous dc) (All Quadrants)
(VD = 12 Vdc, RL = 12 Ohms)
(VD = V
DROM
, RL = 125 Ohms, TC = 100°C)
V
GT
—
0.2
1.25
—
2.5
—
Volts
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 150 mA)
I
H
— 15 30 mA
Gate Controlled Turn-On Time
(Rated V
DRM
, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 µs)
t
gt
— 1.6 — µs
Critical Rate-of-Rise of Commutation Voltage
(Rated V
DRM
, I
T(RMS)
= 6 A, Commutating di/dt = 3.2 A/ms,
Gate Unenergized, TC = 80°C)
dv/dt(c) — 10 — V/µs
Critical Rate-of-Rise of Off-State Voltage
(Rated V
DRM
, Exponential Voltage Rise,
Gate Open, TC = 100°C) T2500B
T2500D,M,N
dv/dt
—
—
100
75
—
—
V/µs
*Pulse Test: Pulse Width p 300 µs, Duty Cycle p 2%.
QUADRANT DEFINITIONS
QUADRANT II QUADRANT I
QUADRANT III QUADRANT IV
MT2(+)
MT2(–)
MT2(+), G(–) MT2(+), G(+)
MT2(–), G(–) MT2(–), G(+)
G(–) G(+)
ELECTRICAL CHARACTERISTICS of RECOMMENDED
BIDIRECTIONAL SWITCHES
USAGE
General
PART NUMBER MBS4991 MBS4992
V
S
6.0 – 10 V 7.5 – 9.0 V
I
S
350 µA Max 120 µA Max
VS1 – V
S2
0.5 V Max 0.2 V Max
Temperature
Coefficient
0.02%/°C Typ
See AN-526 for Theory and Characteristics of Silicon Bidirectional Switches.
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