Motorola MJE16204 Datasheet
1
Motorola Bipolar Power Transistor Device Data
NPN Bipolar Power Deflection Transistor
For High and Very High Resolution Monitors
The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is
specifically designed for use in horizontal deflection circuits for 20 mm diameter neck,
high and very resolution, full page, monochrome monitors.
• 550 Volt Collector–Base Breakdown Capability
• Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
• Application Specific State–of–the–Art Die Design
• Isolated or Non–Isolated TO–220 Type Packages
• Fast Switching:
65 ns Inductive Fall Time (Typ)
680 ns Inductive Storage Time (Typ)
• Low Saturation Voltage:
0.4 Volts at 3.0 Amps Collector Current and 400 mA Base Drive
• Low Collector–Emitter Leakage Current — 100 µA Max at 550 Volts — V
CES
• High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
9.0 Volts (Min)
• Case 221D is UL Recognized at 3500 V
RMS
: File #E69369
MAXIMUM RATINGS
Rating
Symbol
ООООООО
ООООООО
ООООООО
MJE16204
Unit
Collector–Emitter Breakdown Voltage
V
CES
ООООООО
ООООООО
ООООООО
550
Vdc
Collector–Emitter Sustaining Voltage
V
CEO(sus)
ООООООО
ООООООО
ООООООО
250
Vdc
Emitter–Base Voltage
V
EBO
ООООООО
ООООООО
ООООООО
8.0
Vdc
RMS Isolation Voltage(2) Per Fig. 14
(for 1 sec, TA = 25_C, Per Fig. 15
Rel. Humidity < 30%) Per Fig. 16
V
ISOL
ООООООО
ООООООО
ООООООО
ООООООО
—
—
—
V
Collector Current — Continuous
— Pulsed (1)
I
C
I
CM
ООООООО
ООООООО
ООООООО
ООООООО
6.0
8.0
Adc
Base Current — Continuous
— Pulsed (1)
I
B
I
BM
ООООООО
ООООООО
ООООООО
2.0
4.0
Adc
Repetitive Emitter–Base Avalanche Energy
W
(BER)
ООООООО
ООООООО
ООООООО
0.2
mJ
Total Power Dissipation @ TC = 25_C
Total Power Dissipation @ TC = 100_C
Derated above TC = 25_C
P
D
ООООООО
ООООООО
ООООООО
ООООООО
80
32
0.64
Watts
W/_C
Operating and Storage Temperature Range
TJ, T
stg
ООООООО
ООООООО
ООООООО
–55 to 150
_
C
THERMAL CHARCTERISTICS
Characteristic
Symbol
ООООООО
ООООООО
ООООООО
Max
Unit
Thermal Resistance — Junction to Case
R
θJC
ООООООО
ООООООО
ООООООО
1.56
_
C/W
Lead Temperature for Soldering Purposes
1/8″ from the case for 5 seconds
T
L
ООООООО
ООООООО
ООООООО
ООООООО
260
_
C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
(2) Proper strike and creepage distance must be provided.
*Measurement made with thermocouple contacting the bottom insulated mounting surface of the
package (in a location beneath the die), the device mounted on a heatsink thermal grease applied,
and a mounting torque of 6 to 8 inSlbs.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
SCANSWITCH, SWITCHMODE and Designer’s are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE16204/D
Motorola, Inc. 1995
POWER TRANSISTORS
6.0 AMPERES
550 VOLTS — V
CES
45 AND 80 WATTS
CASE 221A–06
TO–220AB
MJE16204
(REPLACES MJF16204)
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS (1)
Collector Cutoff Current
(VCE = 550 Vdc, VBE = 0 V)
I
CES
—
—
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Emitter–Base Leakage
(VEB = 8.0 Vdc, IC = 0)
I
EBO
—
—
10
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mA, IC = 0)
V
(BR)EBO
8.0
11
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 10 mAdc, IB = 0)
V
CEO(sus)
250
325
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 133 mAdc)
(IC = 3.0 Adc, IB = 400 mAdc)
V
CE(sat)
—
—
0.25
0.4
0.6
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 400 mAdc)
V
BE(sat)
—
0.9
1.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DC Current Gain
(ICE = 6.0 Adc, VCE = 5.0 Vdc)
h
FE
8.0
14
20
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
DYNAMIC CHARACTERISTICS
Dynamic Desaturation Interval (IC = 3.0 A, IB1 = 400 mA)
t
ds
—
50
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ns
Output Capacitance
(VCE = 10 Vdc, IE = 0, f
test
= 100 kHz)
C
ob
—
90
150
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
Gain Bandwidth Product
(VCE = 10 Vdc, IC = 1.0 A, f
test
= 1.0 MHz)
f
T
10
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
Emitter–Base Turn–Off Energy
(EB
(avalanche)
= 500 ns, RBE = 22 Ω)
EB
(off)
—
6.6
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µJ
Collector–Heatsink Capacitance
(Mounted on a 1″ x 2″ x 1/16″ Copper Heatsink, VCE = 0, f
test
= 100 kHz)
C
c–hs
—
3.0
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
SWITCHING CHARACTERISTICS
Inductive Load (Table 2) (IC = 3.0 A, IB = 400 mA)
Storage
Fall Time
t
sv
t
fi
—
—
680
65
1500
150
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ns
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%.
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Typical DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.5 2 10
20
h
FE
, DC CURRENT GAIN
1 53
30
7
0.7
TJ = 100°C
25°C
–55°C
7
10
5
3
50
VCE = 5 V
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Typical Collector–Emitter
Saturation Voltage
0.5
3
0.2
5
10
1
0.1
7
0.3
2
0.7
0.5 32 50.7 1
0.1 0.2
TJ = 25°C
TJ = 100
°
C
IC/IB1 = 10
0.3
7
60
5
7.5
3
Motorola Bipolar Power Transistor Device Data
0.2
C, CAPACITANCE (pF)
V
BE
, BASE–EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. Typical Collector–Emitter
Saturation Region
IB, BASE CURRENT (AMPS)
0.7
0.1
0.03
0.3
0.3
6 A
0.05 1 2
2 A 3 AIC = 1 A
0.03
0.07 0.1 0.7
0.2 0.5
30
5
10
Figure 4. Typical Base–Emitter
Saturation Voltage
0.3 300.5
5
0.7
0.1
0.7 201 10
10
2
TJ = 25°C
2 3 5 7
IC, COLLECTOR CURRENT (AMPS)
TJ = 25°C
TJ = 100
°
C
0.3
Figure 5. Typical Capacitance
10K
VR, REVERSE VOLTAGE (VOLTS)
C
ib
0.1
1K
100
10
1 10 100 1K
2K
200
20
3K
300
5K
500
50
0.3 2 30 300
200.5 5 50 500
f
T
, TRANSITION FREQUENCY (MHz)
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Typical Transition Frequency
VCE = 10 V
f
test
= 1 MHz
TC = 25°C
0 0.5 1 1.5 2 32.5
20
8
2
14
0
6
16
12
0.5
0.07
0.2
0.05
20
3
7
2
1
3
IC/IB1 = 5 to 10
7
1
3
0.5
30
0.2 3 200
TC = 25°C
10
4
18
C
ob
I
C
, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Maximum Forward Biased
Safe Operating Area
7
3
10
1
0.02
70
SECONDARY BREAKDOWN
WIREBOND LIMIT
THERMAL LIMIT
I
C
, COLLECTOR CURRENT (AMPS)
0.1
7 20 250
3
0.3
0.2
dc
TC = 25°C
1 ms
10 µs
2
5
0.5
50
7
0
150 550
IC/IB1 ≥ 5
TJ
≤
100°C
V
BE(off)
= 5 V
50
V
CE(pk)
, PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS)
350
V
BE(off)
= 0 V
Figure 8. Maximum Reverse Biased
Safe Operating Area
3
5
2
1
250 450
0.03
0.07
0.05
0.01
0.7
1005 10 20030
MJE16204
6
4
SAFE OPERATING AREA
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