Motorola MCM6343YJ12R, MCM6343YJ15, MCM6343YJ15R, MCM6343TS15, MCM6343YJ12 Datasheet
...
MCM6343
1
MOTOROLA FAST SRAM
Product Preview
256K x 16 Bit 3.3 V Asynchronous
Fast Static RAM
The MCM6343 is a 4,194,304–bit static random access memory organized as
262,144 words of 16 bits. Static design eliminates the need for external clocks
or timing strobes.
The MCM6343 is equipped with chip enable (E
), write enable (W), and output
enable (G
) pins, allowing for greater system flexibility and eliminating bus con-
tention problems. Separate byte enable controls (LB
and UB) allow individual
bytes to be written and read. LB
controls the lower bits DQ0 to DQ7, while UB
controls the upper bits DQ8 to DQ15.
The MCM6343 is available in a 400 mil, 44–lead small–outline SOJ package
and a 44–lead TSOP Type II package.
• Single 3.3 V ± 0.3 V Power Supply
• Fast Access Time: 12/15 ns
• Equal Address and Chip Enable Access Time
• All Inputs and Outputs are TTL Compatible
• Data Byte Control
• Fully Static Operation
• Power Operation: 250/240/230 mA Maximum, Active AC
• Commercial and Standard Industrial Temperature Option: – 40 to + 85°C
BLOCK DIAGRAM
OUTPUT
ENABLE
BUFFER
ADDRESS
BUFFERS
WRITE
ENABLE
BUFFER
BYTE
ENABLE
BUFFER
ROW
DECODER
COLUMN
DECODER
256K x 16
BIT
MEMORY
ARRAY
HIGH
BYTE
OUTPUT
BUFFER
8
HIGH
BYTE
WRITE
DRIVER
LOW
BYTE
OUTPUT
BUFFER
LOW
BYTE
WRITE
DRIVER
SENSE
AMPS
G
W
LB
8
8
8
8
88
8
9
A
CHIP
ENABLE
BUFFER
E
UB
9
HIGH BYTE OUTPUT ENABLE
LOW BYTE OUTPUT ENABLE
HIGH BYTE WRITE ENABLE
LOW BYTE WRITE ENABLE
16
18
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Order this document
by MCM6343/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MCM6343
YJ PACKAGE
400 MIL SOJ
CASE 919–01
PIN ASSIGNMENT
A0 – A17 Address Input. . . . . . . . . . . . . . . . .
E
Chip Enable. . . . . . . . . . . . . . . . . . . . . . . . .
W
Write Enable. . . . . . . . . . . . . . . . . . . . . . .
G
Output Enable. . . . . . . . . . . . . . . . . . . . . .
UB
Upper Byte. . . . . . . . . . . . . . . . . . . . . . . .
LB
Lower Byte. . . . . . . . . . . . . . . . . . . . . . . . .
DQ0 – DQ15 Data Input/Output. . . . . . . . . .
V
DD
+ 3.3 V Power Supply. . . . . . . . . . . . . .
V
SS
Ground. . . . . . . . . . . . . . . . . . . . . . . . . .
NC No Connection. . . . . . . . . . . . . . . . . . . . .
PIN NAMES
5
4
3
2
1
10
9
8
7
6
11
36
37
38
39
40
41
42
35
43
44
34
E
A
A
A
A
DQ1
DQ0
A
V
DD
DQ3
DQ2
UB
G
A
A
A
DQ12
DQ13
DQ14
V
SS
DQ15
LB
25
26
27
28
29
30
31
24
32
33
23
12
13
14
15
16
17
18
19
20
21
22
DQ8
DQ9
DQ10
DQ11
V
DD
A
A
A
A
A
NCW
DQ6
DQ5
DQ4
V
SS
A
A
DQ7
A
A
A
TS PACKAGE
TSOP TYPE II
CASE 924A–02
REV 2
2/10/98
Motorola, Inc. 1998
MCM6343
2
MOTOROLA FAST SRAM
TRUTH TABLE (X = Don’t Care)
E G W LB UB Mode VDD Current DQ0 – DQ7 DQ8 – DQ15
H X X X X Not Selected I
SB1
, I
SB2
High–Z High–Z
L H H X X Output Disabled I
DDA
High–Z High–Z
L X X H H Output Disabled I
DDA
High–Z High–Z
L L H L H Low Byte Read I
DDA
D
out
High–Z
L L H H L High Byte Read I
DDA
High–Z D
out
L L H L L Word Read I
DDA
D
out
D
out
L X L L H Low Byte Write I
DDA
D
in
High–Z
L X L H L High Byte Write I
DDA
High–Z D
in
L X L L L Word Write I
DDA
D
in
D
in
ABSOLUTE MAXIMUM RATINGS (See Notes)
Rating Symbol Value Unit
Supply Voltage V
DD
– 0.5 to + 4.6 V
Voltage on Any Pin V
in
– 0.5 to VDD + 0.5 V
Output Current per Pin I
out
± 20 mA
Package Power Dissipation P
D
TBD W
Temperature Under Bias Commercial
Industrial
T
bias
– 10 to + 85
– 45 to + 90
°C
Operating Temperature Commercial
Industrial
T
A
0 to + 70
– 45 to + 85
°C
Storage Temperature T
stg
– 55 to + 150 °C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. All voltages are referenced to VSS.
3. Power dissipation capability will be dependent upon package characteristics and use
environment.
This device contains circuitry to protect the
inputs against damage due to high static voltages or electric fields; however, it is advised
that normal precautions be taken to avoid application of any voltage higher than maximum
rated voltages to these high–impedance circuits.
This CMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board and
transverse air flow of at least 500 linear feet per
minute is maintained.
MCM6343
3
MOTOROLA FAST SRAM
DC OPERA TING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V ± 0.3 V, TA = 0 to 70°C, Unless Otherwise Noted)
(TA = – 40 to + 85°C for Industrial Temperature Offering)
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Typ Max Unit
Power Supply Voltage V
DD
3.0 3.3 3.6 V
Input High Voltage V
IH
2.2 —
VDD + 0.3**
V
Input Low Voltage V
IL
– 0.5*
— 0.8 V
*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns) for I ≤ 20.0 mA.
**VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2.0 V ac (pulse width ≤ 20 ns) for I ≤ 20.0 mA.
DC CHARACTERISTICS
Parameter Symbol Min Max Unit
Input Leakage Current (All Inputs, Vin = 0 to VDD) I
lkg(I)
— ±1.0 µA
Output Leakage Current (E = VIH, V
out
= 0 to VDD) I
lkg(O)
— ±1.0 µA
Output Low Voltage (IOL = + 4.0 mA)
(IOL = + 100 µA)
V
OL
— 0.4
VSS + 0.2
V
Output High Voltage (IOH = – 4.0 mA)
(IOH = – 100 µA)
V
OH
2.4
VDD – 0.2
— V
POWER SUPPLY CURRENTS
Parameter Symbol 0 to 70°C
– 40 to
+ 85°C
Unit
AC Active Supply Current MCM6343–12: t
AVAV
= 12 ns
(I
out
= 0 mA, VCC = max) MCM6343–15: t
AVAV
= 15 ns
I
CC
240
230
240
mA
AC Standby Current (VCC = max, E = VIH, MCM6343–12: t
AVAV
= 12 ns
No other restrictions on other inputs) MCM6343–15: t
AVAV
= 15 ns
I
SB1
50
45
55
50
mA
CMOS Standby Current (E ≥ VCC – 0.2 V , Vin ≤ VSS + 0.2 V or ≥ VCC – 0.2 V)
(VCC = max, f = 0 MHz)
I
SB2
5 5
mA
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T
A
= 25°C, Periodically Sampled Rather Than 100% Tested)
Parameter Symbol Typ Max Unit
Address Input Capacitance C
in
— 6 pF
Control Input Capacitance C
in
— 6 pF
Input/Output Capacitance C
I/O
— 8 pF
Loading...