Motorola MAC321-4, MAC321-8, MAC321-6, MAC321-10 Datasheet

1

Motorola Thyristor Device Data

Triacs

Silicon Bidirectional Thyristors

. . . designed for full-wave ac control applications primarily in industrial environments
needing noise immunity.

• Guaranteed High Commutation Voltage
dv/dt — 500 V/µs Min @ TC = 25°C

• High Blocking Voltage — V

DRM

to 800 V

• Photo Glass Passivated Junction for Improved Power Cycling Capability and
Reliability

MAXIMUM RATINGS

(TC = 25°C unless otherwise noted.)

Rating

Symbol Value Unit

Peak Repetitive Off-State Voltage

(1)

(TJ = –40 to +125°C,

1/2 Sine Wave 50 to 60 Hz, Open Gate)

MAC321-4
MAC321-6
MAC321-8
MAC321-10

V

DRM

200
400
600
800

Volts

Peak Gate Voltage V

GM

10 Volts

On-State Current RMS (TC = +75°C

Full Cycle Sine Wave 50 to 60 Hz)

I

T(RMS)

20 Amp

Peak Surge Current (One Full Cycle, 60 Hz, TC = +75°C

preceded and followed by Rated Current)

I

TSM

150 Amp

Circuit Fusing Considerations (t = 8.3 ms) I2t 93 A2s
Peak Gate Power (TC = +75°C, Pulse Width = 2.0 µs) P

GM

20 Watts

Average Gate Power (TC = +75°C, t = 8.3 ms) P

G(AV)

0.5 Watt

Peak Gate Current I

GM

2.0 Amp

Operating Junction Temperature Range T

J

–40 to +125 °C

Storage Temperature Range T

stg

–40 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

1.8 °C/W

1. V

DRM

for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Order this document

by MAC321/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1995

MAC321

Series

CASE 221A-04

(TO-220AB)

STYLE 4

TRIACs

20 AMPERES RMS

200 thru 800 VOLTS

MT1

G

MT2

 

2 Motorola Thyristor Device Data

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

Peak Blocking Current

(VD = Rated V

DRM

, Gate Open)

TJ = 25°C
TJ = +125°C

I

DRM

—
—

—
—

10

2.0

µA

mA

Peak On-State Voltage (Either Direction)

(ITM = 28 A Peak; Pulse Width p 2.0 ms, Duty Cycle p 2.0%)

V

TM

— 1.4 1.7 Volts

Gate Trigger Current (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)

I

GT

—
—
—

—
—
—

100
100
100

mA

Gate Trigger Voltage (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)

(Main Terminal Voltage = Rated V

DRM

, RL = 10 kΩ, TJ = +125°C)

MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)

V

GT

—
—
—

0.2

—
—
—

—

2.0

2.0

2.0

—

Volts

Holding Current (Either Direction)

(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)

I

H

— — 100 mA

Turn-On Time

(VD = Rated V

DRM

, ITM = 28 A, IGT = 120 mA,

Rise Time = 0.1 µs, Pulse Width = 2.0 µs)

t

gt

— 1.5 — µs

Critical Rate of Rise of Off-State Voltage

(VD = Rated V

DRM

, Exponential Voltage Rise, Gate Open)

TJ = 25°C
TJ = +125°C

dv/dt(s)

500
200

—
—

—
—

V/µs

110

120

130

2 4 6 8 10 12

60

70

80

90

100

14 16

dc

0

Figure 1. RMS Current Derating

5

40
35
30
25
20
15
10

2018

Figure 2. On-State Power Dissipation

I

T(RMS)

, RMS ON-STATE CURRENT (AMP)

50

0

2 4 6 8 10 12 14 160 2018

I

T(RMS)

, RMS ON-STATE CURRENT (AMP)

α

= 30

°

60

°

90

°

180

°

α

= CONDUCTION

ANGLE

α

α

α

= CONDUCTION

ANGLE

α

α

P

D(AV)

, AVERAGE POWER (WATT)

T

C

, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)

°

180

°

dc

90

°

60

°

α

= 30

°

TYPICAL CHARACTERISTICS