MOTOROLA MAC23AFP Technical data
MOTOROLA
查询MAC223A6FP/D供应商
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as lighting systems,
heater controls, motor controls and power supplies; or wherever full–wave silicon–
gate–controlled devices are needed.
• Off–State Voltages to 800 Volts
• All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability
• Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat
Dissipation
• Gate Triggering Guaranteed in Four Modes
Order this document
by MAC223A6FP/D
MAC223AFP
Series
ISOLATED TRIACs
THYRISTORS
25 AMPERES RMS
400 thru 800 VOL TS
MT2
MAXIMUM RATINGS
Peak Repetitive Off-State Voltage
1/2 Sine Wave 50 to 60 Hz, Gate Open)
On-State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C,
preceded and followed by rated current)
Circuit Fusing (t = 8.3 ms) I2t 260 A2s
Peak Gate Power (t p 2 µs) P
Average Gate Power (TC = +80°C, t p 8.3 ms) P
Peak Gate Current (t p 2 µs) I
Peak Gate Voltage (t p 2 µs) V
RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) V
Operating Junction Temperature T
Storage Temperature Range T
Mounting Torque — 8 in. lb.
1. V
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
body.
(TJ = 25°C unless otherwise noted.)
Rating
(1)
(TJ = –40 to +125°C,
MAC223A6FP
MAC223A8FP
MAC223A10FP
(2)
MT1
G
Symbol Value Unit
V
DRM
I
T(RMS
I
TSM
GM
G(AV)
GM
GM
(ISO
J
stg
MT1
MT2
G
400
600
800
25 Amps
250 Amps
20 Watts
0.5 Watt
2 Amps
"
1500 Volts
–40 to +125 °C
–40 to +150 °C
CASE 221C-02
STYLE 3
10 Volts
Volts
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
Thermal Resistance, Case to Sink R
Thermal Resistance, Junction to Ambient R
θJC
θCS
θJA
1.2 °C/W
2.2 °C/W
60 °C/W
Motorola Thyristor Device Data
Motorola, Inc. 1999
1
ELECTRICAL CHARACTERISTICS
Characteristic
Peak Blocking Current(1) TJ = 25°C
(VD = Rated V
Peak On-State Voltage
(ITM = 35 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+)
(VD = Rated V
MT(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+)
Holding Current
(VD = 12 V, ITM = 200 mA, Gate Open)
Gate Controlled Turn–On Time
(VD = Rated V
Critical Rate of Rise of Off–State V oltage
(VD = Rated V
Critical Rate of Rise of Commutation Voltage
(VD = Rated V
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
, Gate Open) TJ = 125°C
DRM
, TJ = 125°C, RL = 10 k)
DRM
, ITM = 35 A Peak, IG = 200 mA)
DRM
, Exponential Waveform, TC = 125°C)
DRM
, ITM = 35 A Peak, Commutating
DRM
(TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Symbol Min Typ Max Unit
I
DRM
V
TM
I
GT
V
GT
I
H
t
gt
dv/dt — 40 — V/µs
dv/dt(c) — 5 — V/µs
—
—
— 1.4 1.85 Volts
—
—
—
—
0.2
0.2
— 10 50 mA
— 1.5 — µs
—
—
20
30
1.1
1.3
0.4
0.4
10
50
75
2.5
—
—
2
2
µA
mA
mA
Volts
°
125
115
105
95
85
75
, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
C
T
40
30
20
10
, AVERAGE POWER DISSIPATION (WATTS)
D(AV)
0
1005
I
, RMS ON–STATE CURRENT (AMPS)
T(RMS)
15
2520
P
510
I
, RMS ON–STATE CURRENT (AMPS)
T(RMS)
150
20 25
Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation
2 Motorola Thyristor Device Data
Loading...