MOTOROLA MAC229A8FP Technical data
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SEMICONDUCTOR TECHNICAL DATA
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Triacs
MAC229A8FP
Silicon Bidirectional Triode Thyristors
. . . designed primarily for industrial and consumer applications for full wave control of
ac loads such as appliance controls, heater controls, motor controls, and other power
switching applications.
• All Diffused and Glass–Passivated Junctions for Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal resistance and High
Heat Dissipation
• Center Gate Geometry for Uniform Current Spreading
• Gate Triggering Guaranteed in Four Modes
MT2
MT1
MT2
MAXIMUM RATINGS
Peak Repetitive Off-State Voltage
(TJ = –40 to 110°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
On-State RMS Current (TC = 80°C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non–repetitive Surge Current
(One Full Cycle 60 Hz, TJ = 110°C)
Circuit Fusing
(t = 8.3 ms)
Peak Gate Current (t p2 µs) I
Peak Gate Voltage (t p2 µs) V
Peak Gate Power (t p2 µs) P
Average Gate Power
(TC = 80°C, t p 8.3 ms)
Operating Junction Temperature Range T
Storage Temperature Range T
Mounting Torque 8 in. lb.
1. V
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
body.
(TJ = 25°C unless otherwise noted.)
Rating
(1)
MAC229A8FP
Symbol Value Unit
V
DRM
I
T(RMS)
I
TSM
I2t 26 A2s
GM
GM
GM
P
G(AV)
J
stg
TRIACs
8 AMPERES RMS
600 VOL TS
CASE 221C-02
G
600
8 Amps
80 Amps
"
2 Amps
"
10 Volts
20 Watts
0.5 Watts
–40 to 110 °C
–40 to 150 °C
STYLE 3
Volts
MT1
G
Motorola Thyristor Device Data
Motorola, Inc. 1999
1
MAC229A8FP
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
Thermal Resistance, Case to Sink R
Thermal Resistance, Junction to Ambient R
ELECTRICAL CHARACTERISTICS (T
Characteristic
Peak Blocking Current
(VD = Rated V
Peak On-State Voltage
(ITM = 11 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
(VD = Rated V
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
Holding Current
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
Gate–Controlled Turn–On Time
(VD = Rated V
Critical Rate of Rise of Off–State V oltage
(VD = Rated V
Critical Rate of Rise of Commutation Voltage
(VD = Rated V
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
(1)
, Open Gate) TJ = 25°C
DRM
, TC = 110°C, RL = 10 k)
DRM
, ITM = 16 A Peak, IG = 30 mA)
DRM
, Exponential Waveform, TC = 110°C)
DRM
, ITM = 11.3 A,
DRM
= 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
C
Symbol Min Typ Max Unit
I
TJ = 110°C
dv/dt(c) — 5 — V/µs
θJC
θCS
θJA
DRM
V
TM
I
GT
V
GT
I
H
t
gt
dv/dt — 25 — V/µs
—
—
— — 1.8 Volts
—
—
—
—
0.2
0.2
— — 15 mA
— 1.5 — µs
2.2 °C/W
2.2 (typ) °C/W
60 °C/W
—
—
—
—
—
—
—
—
10
2
5
10
2
2.5
—
—
µA
mA
mA
Volts
110
104
°
98
92
, CASE TEMPERATURE ( C)
C
86
T
80
α
α
= CONDUCTION ANGLE
α
I
, RMS ON–STATE CURRENT (AMP)
T(RMS)
a
= 30
°
60
°
90
°
120
°
180
°
dc
7.0 8.0
6.00
5.01.0 2.0 3.0 4.0
8.0
6.0
4.0
, AVERAGE POWER (WATTS)
2.0
(AV)
P
10
α
α
= CONDUCTION ANGLE
TJ ≈ 110°C
0
I
T(RMS)
α
60
°
30
°
, RMS ON–STATE CURRENT (AMP)
a
= 180
°
120
°
90
°
5.01.0 2.0 3.0 4.0 7.0 8.0
dc
6.00
2 Motorola Thyristor Device Data
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