MOTOROLA MAC212A Technical data
MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High
Heat Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes
Order this document
by MAC212A8/D
MAC212A
Series
TRIACs
12 AMPERES RMS
600 thru 800 VOL TS
MT2
MT1
G
MT1
MT2
G
CASE 221A-07
(TO-220AB)
STYLE 4
MAXIMUM RATINGS
Repetitive Peak Off-State Voltage
1/2 Sine Wave 50 to 60 Hz, Gate Open)
On-State Current RMS (TC = +85°C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C)
preceded and followed by Rated Current
Circuit Fusing Considerations (t = 8.3 ms) I2t 40 A2s
Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) P
Average Gate Power (TC = +85°C, t = 8.3 ms) P
Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) I
Operating Junction Temperature Range T
Storage Temperature Range T
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that
DRM
the voltage ratings of the devices are exceeded.
(TJ = 25°C unless otherwise noted.)
Rating
(1)
(TJ = –40 to +125°C,
MAC212A8
MAC212A10
Symbol Value Unit
V
DRM
600
800
I
T(RMS)
I
TSM
GM
G(AV)
GM
J
stg
12 Amp
100 Amp
20 Watts
0.35 Watt
2 Amp
–40 to +125 °C
–40 to +150 °C
MT2
Volts
Motorola Thyristor Device Data
Motorola, Inc. 1999
1
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
θJC
R
θJA
T
L
ELECTRICAL CHARACTERISTICS (T
Peak Blocking Current (Either Direction)
(VD = Rated V
Peak On-State Voltage (Either Direction)
ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%
Gate Trigger Current (Continuous dc)
(Main T erminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
Gate Trigger Voltage (Continuous dc)
(Main T erminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
(Main Terminal Voltage = Rated V
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+)
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA)
Turn-On Time
(VD = Rated V
Rise Time = 0.1 µs, Pulse Width = 2 µs)
Critical Rate of Rise of Commutation Voltage
(VD = Rated V
Gate Unenergized, TC = +85°C)
Critical Rate of Rise of Off-State V oltage
(VD = Rated V
TC = +85°C)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260 °C
= 25°C unless otherwise noted.)
C
Characteristic
, Gate Open) TJ = 25°C
DRM
, ITM = 17 A, IGT = 120 mA,
DRM
, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
DRM
, Exponential Voltage Rise, Gate Open,
DRM
TJ = +125°C
, RL = 10 kΩ, TJ = +125°C)
DRM
Symbol Min Typ Max Unit
I
DRM
V
TM
I
GT
V
GT
I
H
t
gt
dv/dt
(c)
dv/dt — 100 — V/µs
—
—
— 1.3 1.75 Volts
—
—
—
—
—
—
—
—
0.2
0.2
— 6 50 mA
— 1.5 — µs
— 5 — V/µs
—
—
12
12
20
35
0.9
0.9
1.1
1.4
—
—
2.0
62.5
10
2
50
50
50
75
2
2
2
2.5
—
—
°C/W
µA
mA
mA
Volts
°
125
115
105
95
85
75
C
0 2.0 4.0 6.0 8.0 10 12
T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
FIGURE 1 — CURRENT
DERATING
α
α
α
= CONDUCTION ANGLE
I
, RMS ON-STATE CURRENT (AMP)
T(RMS)
α
= 30
60
90
180
dc
28
24
20
°
°
°
°
14
D(AV)
P , AVERAGE POWER DISSIPATION (WATT)
16
12
8.0
4.0
α
= CONDUCTION ANGLE
0
FIGURE 2 — POWER
DISSIPATION
α
α
I
, RMS ON-STATE CURRENT (AMP)
T(RMS)
dc
α
= 180
90
60
30
2 Motorola Thyristor Device Data
°
°
°
°
1412106.0 8.04.02.00
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