SEMICONDUCTOR TECHNICAL DATA
The RF Line
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by CA2830C/D
. . . designed for amplifier applications in 50 to 100 ohm systems requiring wide
bandwidth, low noise and low distortion. This hybrid provides excellent gain
stability with temperature and linear amplification as a result of the push–pull
circuit design.
• Specified Characteristics at VCC = 24 V, TC = 25°C:
Frequency Range — 5 to 200 MHz
Output Power — 800 mW Typ @ 1 dB Compression, f = 200 MHz
Power Gain — 34.5 dB Typ @ f = 100 MHz
PEP — 800 mW Typ @ –32 dB IMD
Noise Figure — 4.7 dB Typ @ f = 200 MHz
ITO — 46 dBm @ f = 200 MHz
• All Gold Metallization for Improved Reliability
• Unconditional Stability Under All Load Conditions
MAXIMUM RATINGS
Rating Symbol Value Unit
DC Supply Voltage V
RF Power Input P
Operating Case Temperature Range T
Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (T
Characteristic
Frequency Range BW 5 — 200 MHz
Gain Flatness (f = 5–200 MHz) — — ±0.5 ±1 dB
Power Gain (f = 100 MHz) P
Noise Figure, Broadband (f = 200 MHz) NF — 4.7 5.5 dB
Power Output — 1 dB Compression
(f = 5–200 MHz)
Power Output — 1 dB Compression
(f = 5–200 MHz, VCC = 28 V)
Third Order Intercept (See Figure 10, f1 = 200 MHz) ITO 44 46 — dBm
Input/Output VSWR (f = 5–200 MHz) VSWR — 1.5:1 2:1 —
Second Harmonic Distortion
(Tone at 100 mW, f2H = 150 MHz)
Peak Envelope Power
(Two Tone Distortion Test — See Figure 10)
(f = 5–200 MHz @ –32 dB IMD)
Supply Current I
= 25°C, VCC = 24 V, 50 Ω system unless otherwise noted)
C
CC
in
C
stg
28 Vdc
+5 dBm
–20 to +100 °C
–40 to +100 °C
Symbol Min Typ Max Unit
G
Po
1dB
Po
1dB
d
so
PEP 600 800 — mW
CC
33.5 34.5 35.5 dB
630 800 — mW
1000 1260 — mW
— –60 –50 dB
270 300 330 mA
CASE 714F–03, STYLE 1
34.5 dB
5–200 MHz
800 mWATT
WIDEBAND
LINEAR AMPLIFIERS
(CA)
REV 1
Motorola, Inc. 1997
CA2830CMOTOROLA RF DEVICE DATA
1
TYPICAL CHARACTERISTICS
37.0
36.0
35.0
34.0
33.0
, POWER GAIN (dB)
G
P
32.0
31.0
–3 dB POINTS
fL = 1.5 MHz
fu = 360 MHz
0 100 200 300 400 500 600 700
f, FREQUENCY (MHz)
15 V
24 V
28 V
TC = 25°C
Figure 1. Power Gain versus Frequency
1.5
1.0
0.5
(Relative to Frequency Response at 25°C)
9.0
8.0
7.0
6.0
5.0
NF, NOISE FIGURE (dB)
4.0
15 V
3.0
100 200 300 400 500 600 700
0
f, FREQUENCY (MHz)
24 V
28 V
TC = 25°C
Figure 4. Noise Figure versus V oltage
52.0
50.0
48.0
0
GAIN (dB)
∆
–0.5
–1.0
–1.5
–2.0
1
34.0
32.0
30.0
28.0
26.0
, POWER OUTPUT (dBm)
24.0
o1 dB
P
22.0
0
VCC = 24V
10 100 200 300 400 500 600
f, FREQUENCY (MHz)
–40°C
+100°C
Figure 2. Relative Power Gain
versus T emperature
15 V
24 V
28 V
TC = 25°C
100 200 300 400 500 600 700
f, FREQUENCY (MHz)
Figure 3. 1 dB Gain Compression
versus V oltage
46.0
44.0
42.0
40.0
ITO, 3RD ORDER INTERCEPT POINT (dBm)
0
Figure 5. Third Order Intercept
34.0
32.0
30.0
28.0
26.0
PEP, POWER (dBm)
24.0
22.0
0
Figure 6. Peak Envelope Power
15 V
24 V
28 V
TC = 25°C
100 200 300 400 500 600 700
f, FREQUENCY (MHz)
versus V oltage
15 V
24 V
28 V
TC = 25°C
100 200 300 400 500 600 700
f, FREQUENCY (MHz)
versus V oltage
CA2830C
2
MOTOROLA RF DEVICE DATA