Motorola CA2818C Datasheet

1

CA2818CMOTOROLA RF DEVICE DATA

The RF Line

  

Designed for amplifier applications in 50 to 100 ohm systems requiring wide
bandwidth, low noise and low distortion. This hybrid provides excellent gain
stability with temperature and linear amplification as a result of the push–pull
circuit design.

• Specified Characteristics at VCC = 24 V, TC = 25°C:

Frequency Range — 0.35 to 400 MHz
Output Power — 1000 mW Typ @ 1 dB Compression, f = 200 MHz
Power Gain — 18.5 dB Typ @ f = 50 MHz
PEP — 1000 mW Typ @ –32 dB IMD, f = 200 MHz
Noise Figure — 5 dB Typ @ f = 200 MHz
ITO — 47 dBm Typ @ f = 150 MHz

• All Gold Metallization for Improved Reliability

• Unconditional Stability Under All Load Conditions

MAXIMUM RATINGS

Rating Symbol Value Unit

Supply Voltage V

CC

28 Vdc

RF Power Input P

in

+14 dBm

Operating Case Temperature Range T

C

–20 to +100 °C

Storage Temperature Range T

stg

–40 to +100 °C

ELECTRICAL CHARACTERISTICS (T

C

= 25°C, VCC = 24 V, 50 Ω system unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

Frequency Range BW 0.35 — 400 MHz
Gain Flatness (f = 0.35–400 MHz) F

L

— ±0.5 ±1 dB

Power Gain (f = 50 MHz) P

G

17.75 18.5 19.25 dB
Noise Figure, Broadband (f = 200 MHz) NF — 5 6 dB
Power Output — 1 dB Compression (f = 200 MHz) Po

1dB

800 1000 — mW
Third Order Intercept (See Figure 10, f1 = 200 MHz) ITO 43 45 — dBm
Input/Output VSWR (f = 0.35–400 MHz) VSWR — 1.7:1 2:1 —
Second Harmonic Distortion (Po = 100 mW) f2H = 0.35–200 MHz

f2H = 200–400 MHz

d

so

—
—

–65

—

–60
–50

dB

Peak Envelope Power (Two Tone Distortion Test — See Figure 10)

f = 0.35–200 MHz @ –32 dB IMD
f = 200–400 MHz @ –32 dB IMD

PEP 600 800 — mW

Supply Current I

CC

190 205 220 mA

Order this document

by CA2818C/D



SEMICONDUCTOR TECHNICAL DATA



18.5 dB

0.35–400 MHz
1000 mWATT

WIDEBAND

LINEAR AMPLIFIER

CASE 714F–03, STYLE 1

[CA (POS. SUPPLY)]

 Motorola, Inc. 1995

REV 1

CA2818C
2

MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

f, FREQUENCY (MHz)

100 7006005004003002000

20

19
18

17

16

15

14
13

PG, POWER GAIN (dB)

TC = 25°C

15 V
24 V

28 V

Figure 1. Power Gain versus Voltage

VCC = 24 V

f, FREQUENCY (MHz)

100 7006005004003002000

1.5

GAIN (dB)

∆

1.0

0.5

0.0

– 0.5
– 1.0

– 1.5

– 2.0

– 40°C
+ 100

°

C

(RELATIVE TO FREQUENCY RESPONSE AT 25°C)

Figure 2. Relative Power Gain

versus Temperature

f, FREQUENCY (MHz)

100 7006005004003002000

TC = 25°C

34

32
30

28

26

24

22
20

Po1dB, POWER OUTPUT (dBm)

15 V
24 V

28 V

Figure 3. 1 dB Compression versus Voltage

TC = 25°C

f, FREQUENCY (MHz)

100 7006005004003002000

8

7
6

5

4

3

2
1

NF, NOISE FIGURE (dB)

15 V
24 V

28 V

Figure 4. Noise Figure versus Voltage

TC = 25°C

f, FREQUENCY (MHz)

100 7006005004003002000

47

45
43

41

39

37

35
33

ITO, 3RD ORDER INTERCEPT POINT (dBm)

15 V
24 V

28 V

Figure 5. Third Order Intercept

versus Voltage

f, FREQUENCY (MHz)

100 7006005004003002000

TC = 25°C

34

32
30

28

26

24

22
20

PEP, POWER (dBm)

15 V
24 V
28 V

Figure 6. Peak Envelope Power

versus Voltage