Motorola BSS123LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BSS123LT1/D
N–Channel
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
Drain Current
Continuous
Pulsed
(1)
(2)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(3)
DEVICE MARKING
BSS123L T1 = SA
V
V
I
R
DSS
GS
GSM
I
D
DM
P
D
q
JA
stg
3 DRAIN
1
GATE
2 SOURCE
100 Vdc
±20
±40
0.17
0.68
225
1.8
556 °C/W
–55 to +150 °C
mW/°C
Motorola Preferred Device
3
1
2
CASE 318–08, STYLE 21
SOT–23 (TO–236AB)
Vdc
Vpk
Adc
mW
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25°C
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR–5 = 1.0 0.75 0.062 in.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
TJ = 125°C
(4)
V
(BR)DSS
I
I
V
GS(th)
r
DS(on)
DSS
GSS
g
fs
100 — — Vdc
—
—
— — 50 nAdc
0.8 — 2.8 Vdc
— 5.0 6.0 Ω
80 — — mmhos
—
—
15
60
µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
BSS123LT1
(
CC
,
C
,
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted) (Continued)
A
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Turn–Off Delay Time
(4)
(VCC = 30 Vdc, IC = 0.28 Adc,
VGS = 10 Vdc, RGS = 50 Ω)
REVERSE DIODE
Diode Forward On–Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2.0
1.8
TA = 25°C
1.6
1.4
1.2
1.0
0.8
0.6
, DRAIN CURRENT (AMPS)
D
I
0.4
0.2
0
VDS, DRAN SOURCE VOLTAGE (VOLTS)
VGS = 10 V
9 V
8 V
7 V
6 V
5 V
4 V
3 V
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
SD
1.0
VDS = 10 V
0.8
0.6
0.4
, DRAIN CURRENT (AMPS)
D
I
0.2
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
— 20 — pF
— 9.0 — pF
— 4.0 — pF
— 20 — ns
— 40 — ns
— — 1.3 V
–55°C
VGS, GATE SOURCE VOLTAGE (VOLTS)
25°C
125°C
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
Figure 1. Ohmic Region
2.4
2.2
VGS = 10 V
2.0
ID = 200 mA
1.8
1.6
1.4
1.2
(NORMALIZED)
1.0
0.8
, STA TIC DRAIN–SOURCE ON–RESISTANCE
0.6
0.4
DS(on)
r
–60 –20 +20 +60 +100 + 140 –60 –20 + 20 +60 +100 +140
°
T, TEMPERA TURE (
C)
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
, THRESHOLD VOLTAGE (NORMALIZED)
0.75
GS(th)
V
0.7
Figure 3. T emperature versus Static
Drain–Source On–Resistance
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 2. Transfer Characteristics
VDS = V
ID = 1.0 mA
T, TEMPERA TURE (°C)
Figure 4. T emperature versus Gate
Threshold V oltage
GS
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