Motorola BAW56WT1 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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MAXIMUM RATINGS (T

Rating

Reverse Voltage V
Forward Current I
Peak Forward Surge Current I

= 25°C)

A

Symbol Max Unit

FM(surge)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation

Alumina Substrate

Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T

(2)

TA = 25°C

(1)

DEVICE MARKING

A1

CATHODE

1

3

ANODE

R

F

P

D

R

q

JA

P

D

R

q

JA

stg

70 Vdc
200 mAdc
500 mAdc

200

1.6

0.625 °C/W
300

2.4

417 °C/W

–55 to +150 °C

2

mW

mW/°C

mW

mW/°C

Motorola Preferred Device

3

1

2

CASE 419–02, STYLE 4

SC–70/SOT–323

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

A

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I

= 100 µAdc)

(BR)

Reverse Voltage Leakage Current

(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)

Diode Capacitance

(VR = 0, f = 1.0 MHz)

Forward Voltage

(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 60 mAdc)
(IF = 150 mAdc)

Reverse Recovery Time

(IF = IR = 10 mAdc, RL = 100 Ω, I

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

= 1.0 mAdc) (Figure 1)

R(REC)

Symbol Min Max Unit

V

(BR)

I

R

C

D

V

F

t

rr

70 — Vdc

—
—
—

— 2.0 pF

—
—
—
—

— 6.0 ns

30

2.5
50

715

855
1000
1250

µAdc

mVdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

1

BAW56WT1

820

Ω

+10 V

0.1 µF

2.0 k
100

I

t

t

r

0.1

µ

I

F

µ

H

F

p

10%

t

F

t

rr

t

50 Ω OUTPUT

PULSE

GENERATOR

100

10

1.0

, FORWARD CURRENT (mA)

F

I

0.1

0.2 0.4

DUT

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t

Figure 1. Recovery Time Equivalent Test Circuit

TA = 85°C

TA = 25°C

TA = –40°C

0.6 0.8 1.0

VF, FORWARD VOLTAGE (VOLTS)

50

Ω

INPUT

SAMPLING

OSCILLOSCOPE

rr

1.2

V

R

is equal to 10 mA.

R(peak)

A)

µ

, REVERSE CURRENT (

R

I

90%

INPUT SIGNAL

10

1.0

0.1

0.01

0.001
0

i

I

R

(IF = IR = 10 mA; MEASURED

TA = 150°C
TA = 125°C

TA = 85°C

TA = 55°C

TA = 25°C

10 20 30 40

VR, REVERSE VOLTAGE (VOLTS)

R(REC)

OUTPUT PULSE

at i

R(REC)

= 1.0 mA)

= 1.0 mA

50

Figure 2. Forward V oltage Figure 3. Leakage Current

1.75

1.5

1.25

, DIODE CAPACITANCE (pF)

1.0

D

C

0.75
0

246 8
VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data