Motorola BAV74LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
3
CATHODE
ANODE
1
2
ANODE
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by BAV74LT1/D
3
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
FM(surge)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
BAV74LT1 = JA
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
= 25°C unless otherwise noted) (EACH DIODE)
A
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
= 5.0 µAdc)
(BR)
Reverse Voltage Leakage Current
(VR = 50 Vdc, TJ = 125°C)
(VR = 50 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, I
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
= 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 Ω)
R(REC)
Symbol Value Unit
R
F
P
D
R
q
JA
P
D
R
q
JA
stg
50 Vdc
200 mAdc
500 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
mW
mW/°C
mW
mW/°C
V
(BR)
I
R
C
D
V
F
t
rr
1
2
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
50 — Vdc
—
—
— 2.0 pF
— 1.0 Vdc
— 4.0 ns
100
0.1
µAdc
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
BAV74LT1
Curves Applicable to Each Anode
100
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4
TA = 85°C
TA = –40°C
TA = 25°C
0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
1.2
A)
µ
, REVERSE CURRENT (
R
0.01
I
0.001
10
1.0
0.1
0
10 20 30 40
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward V oltage Figure 2. Leakage Current
1.0
0.9
50
, DIODE CAPACITANCE (pF)
D
C
0.8
0.7
0.6
0
2468
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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