Motorola BAV70LT1 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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ANODE

3

CATHODE

ANODE

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by BAV70LT1/D

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Motorola Preferred Device

1

2

3

MAXIMUM RATINGS (EACH DIODE)

Rating

Reverse Voltage V
Forward Current I
Peak Forward Surge Current I

Symbol Value Unit

R

F

FM(surge)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation

Alumina Substrate,

Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T

(2)

TA = 25°C

(1)

P

D

R

q

JA

P

D

R

q

JA

stg

DEVICE MARKING

BAV70LT1 = A4

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Max Unit

= 25°C unless otherwise noted) (EACH DIODE)

A

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I

= 100 µAdc)

(BR)

Reverse Voltage Leakage Current

(VR = 25 Vdc, TJ = 150°C)

(VR = 70 Vdc)

(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance

(VR = 0, f = 1.0 MHz)
Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)
Reverse Recovery Time RL = 100 Ω

(IF = IR = 10 mAdc, VR = 5.0 Vdc, I

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

= 1.0 mAdc) (Figure 1)

R(REC)

70 Vdc
200 mAdc
500 mAdc

225

1.8
556 °C/W
300

2.4
417 °C/W

–55 to +150 °C

mW

mW/°C

mW

mW/°C

V

(BR)

I

R

C

D

V

F

t

rr

1

2

CASE 318–08, STYLE 9

SOT–23 (TO–236AB)

70 — Vdc

—
—
—

— 1.5 pF

—
—
—
—

— 6.0 ns

60

2.5

100

715

855
1000
1250

µAdc

mVdc

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1996

1

BAV70LT1

820

Ω

+10 V

0.1 µF

2.0 k
100

I

t

t

r

0.1

µ

I

F

µ

H

F

p

10%

t

F

t

rr

t

50 Ω OUTPUT

PULSE

GENERATOR

100

10

1.0

, FORWARD CURRENT (mA)

F

I

TA = 85°C

D.U.T.

50

Ω

INPUT

SAMPLING

OSCILLOSCOPE

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t

rr

V

R

R(peak)

90%

INPUT SIGNAL

is equal to 10 mA.

I

R

Figure 1. Recovery Time Equivalent Test Circuit

Curves Applicable to Each Anode

TA = 25°C

TA = –40°C

A)

µ

, REVERSE CURRENT (
I

R

10

1.0

0.1

0.01

TA = 150°C
TA = 125°C

TA = 85°C

TA = 55°C

i

= 1.0 mA

R(REC)

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at i

R(REC)

= 1.0 mA)

0.1

0.2 0.4

TA = 25°C

0.6 0.8 1.0

VF, FORWARD VOLTAGE (VOLTS)

1.2

0.001
0

10 20 30 40

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Forward V oltage Figure 3. Leakage Current

1.0

0.9

0.8

, DIODE CAPACITANCE (pF)

0.7

D

C

0.6
0

2468

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

50

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data