SEMICONDUCTOR TECHNICAL DATA
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by BAT54T1/D
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
1
Cathode
Anode
Motorola Preferred Device
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODE
2
2
1
CASE 425–04, STYLE 1
SOD–123
MAXIMUM RATINGS
Reverse Voltage V
Forward Power Dissipation, FR–5 Board
@ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R
Forward Current (DC) I
Non–Repetitive Peak Forward Current
tp < 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
Junction Temperature T
Storage Temperature Range T
(TJ = 125°C unless otherwise noted)
Rating Symbol Value Unit
R
(1)
P
θJL
θJA
I
FSM
I
FRM
stg
F
F
J
DEVICE MARKING
BAT54T1 = BU
1. FR-5 = 1.0 x 0.75 x 0.062 in.
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company .
30 Volts
400
3.2
174 °C/W
492 °C/W
200 Max mA
600 mA
300 mA
125 Max °C
–55 to +150 °C
mW
mW/°C
REV 4
Motorola, Inc. 1997
1Motorola Small–Signal Transistors, FETs and Diodes Device Data
BAT54T1
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C
Reverse Leakage (VR = 25 V) I
Forward Voltage (IF = 0.1 mAdc) V
Forward Voltage (IF = 30 mAdc) V
Forward Voltage (IF = 100 mAdc) V
Reverse Recovery Time
(IF = IR = 10 mAdc, I
Forward Voltage (IF = 1.0 mAdc) V
Forward Voltage (IF = 10 mAdc) V
Forward Current (DC) I
Repetitive Peak Forward Current I
Non–Repetitive Peak Forward Current (t < 1.0 s) I
= 1.0 mAdc) Figure 1
R(REC)
(TA = 25°C unless otherwise noted)
(BR)R
T
R
F
F
F
t
rr
F
F
F
FRM
FSM
30 — — Volts
— 7.6 10 pF
— 0.5 2.0 µAdc
— 0.22 0.24 Vdc
— 0.41 0.5 Vdc
— 0.52 1.0 Vdc
— — 5.0 ns
— 0.29 0.32 Vdc
— 0.35 0.40 Vdc
— — 200 mAdc
— — 300 mAdc
— — 600 mAdc
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data