Motorola BAS70LT1 Datasheet

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SEMICONDUCTOR TECHNICAL DATA
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by BAS70LT1/D
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These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.75 Volts (Typ) @ IF = 10 mAdc
3
CATHODE
MAXIMUM RATINGS
Reverse Voltage V Forward Power Dissipation
@ TA = 25°C Derate above 25°C
Operating Junction and Storage Temperature Range TJ, T
(TJ = 150°C unless otherwise noted)
Rating
Symbol Value Unit
R
P
F
stg
DEVICE MARKING
BAS70LT1 = BE
ELECTRICAL CHARACTERISTICS (T
Characteristic
Reverse Breakdown Voltage (IR = 10 µA) V Total Capacitance (VR = 0 V, f = 1.0 MHz) C Reverse Leakage (VR = 50 V)
(VR = 70 V) Forward Voltage (IF = 1.0 mAdc) V Forward Voltage (IF = 10 mAdc) V Forward Voltage (IF = 15 mAdc) V
= 25°C unless otherwise noted)
A
1
ANODE
Symbol Min Max Unit
(BR)R
I
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Motorola Preferred Device
SCHOTTKY BARRIER DIODES
70 Volts
225
1.8
–55 to +150 °C
70 Volts
T
R
F F F
2.0 pF —
— — 410 mVdc — 750 mVdc — 1.0 Vdc
70 VOLTS
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
mW/°C
0.1 10
mW
µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company .
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
BAS70LT1
100
1.0
, FORWARD CURRENT (mA)
F
I
0.1
10
125°C 85°C
25°C
0 0.1
100
TA = 150°C
A)
µ
10
125°C
1.0 85°C
150°C
–55°C
0.2 0.3 0.4 VF, FORWARD VOLTAGE (VOLTS)
0.5
–40°C
0.6 0.7
0.8 0.9
1.0
, REVERSE CURRENT (
R
I
0.001
0.1
0.01 25°C
0
5.0 10 15 20
25
30 35 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. T ypical Forward Voltage Figure 2. Reverse Current versus Reverse
V oltage
1.4
1.2
1.0
0.8
45
50
, CAPACITANCE (pF)
T
C
0.6
0.4
0.2 0
0
5.0 10 15 50 VR, REVERSE VOLTAGE (VOLTS)
20
25
30 35 40 45
Figure 3. T ypical Capacitance
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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