Mitsubishi M5M4V64S20ATP-8L, M5M4V64S20ATP-8A, M5M4V64S20ATP-8, M5M4V64S20ATP-10L, M5M4V64S20ATP-10 Datasheet

SDRAM (Rev.1.3)

Mar98

Some of contents are subject to change without notice.

MITSUBISHI LSIs

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

DESCRIPTION

The M5M4V64S20ATP is a 4-bank x 4194304-word x 4-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The

M5M4V64S20ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory or graphic memory in computer systems.

FEATURES

- Single 3.3v±0.3v power supply

- Clock frequency 125MHz /100MHz

- Fully synchronous operation referenced to clock rising edge

- 4 bank operation controlled by BA0, BA1 (Bank Address)

- /CAS latency- 2/3 (programmable)

- Burst length- 1/2/4/8/Full Page (programmable)

- Burst type- sequential / interleave (programmable)

- Column access - random

- Burst Write / Single Write (programmable)

- Auto precharge / All bank precharge controlled by A10

- Auto refresh and Self refresh

- 4096 refresh cycles /64ms

- Column address A0-A9

- LVTTL Interface

- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with

0.8mm lead pitch

Max.

Frequency

M5M4V64S30ATP-8A 125MHz M5M4V64S30ATP-8

M5M4V64S30ATP-10

100MHz 100MHz

CLK Access

Time

6ns 6ns

8ns

PIN CONFIGURATION

(TOP VIEW)

Vdd

VddQ

DQ0

VssQ

NC NC

VddQ

DQ1

VssQ

Vdd

/WE

/CAS /RAS

/CS

BA0(A13) BA1(A12)

A10

Vdd

NC NC

2 3

4 5

6 7

8 9 10

11 12

13 14

15 16 17

18 19

20 21 22

24 31

A1 A6

25 30

26 29

27 28

400mil 54pin TSOP(II)

CLK : Master Clock CKE : Clock Enable

/CS : Chip Select /RAS : Row Address Strobe /CAS : Column Address Strobe

/WE : Write Enable DQ0-3 DQM

: Data I/O

: Output Disable/ Write Mask A0-11 : Address Input BA0,1 : Bank Address Vdd : Power Supply VddQ : Power Supply for Output Vss : Ground VssQ : Ground for Output

54 53

52 51 50

49 48

47 46 45

44 43

42 41

40 39 38

37 36

35 34 33

Vss VssQ

NC DQ3

VddQ NC NC

VssQ NC

DQ2 VddQ

NC Vss NC DQM CLK

CKE NC

A11 A9 A8

A723 32 A5

A4 Vss

MITSUBISHI ELECTRIC

SDRAM (Rev.1.3)

Mar98

MITSUBISHI LSIs

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

BLOCK DIAGRAM

Memory Array

Bank #0

Mode

Memory Array

I/O Buffer

Bank #1

Control Circuitry

DQ0-3

Memory Array

Bank #2

Memory Array

Bank #3

Address Buffer

A0-11 BA0,1

Type Designation Code

M 5M 4 V 64 S 2 0 A TP - 8

Control Signal Buffer

Clock Buffer

/CS /RAS /CAS /WE DQM

CLK CKE

This rule is applied to only Synchronous DRAM family.

Access Item Package Type TP: TSOP(II) Process Generation Function 0: Random Column, 1: 2N-rule

Organization 2n 2: x4, 3: x8, 4: x16

Synchronous DRAM

Density 64:64M bits Interface S: SSTL, V:LVTTL Memory Style (DRAM) Use, Recommended Operating Conditions, etc Mitsubishi Main Designation

MITSUBISHI ELECTRIC

MITSUBISHI LSIs

SDRAM (Rev.1.3)

Mar98

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

PIN FUNCTION

CLK Input Master Clock: All other inputs are referenced to the rising edge of CLK.

Clock Enable: CKE controls internal clock. When CKE is low, internal clock

CKE Input

/CS Input Chip Select: When /CS is high, any command means No Operation.

/RAS, /CAS, /WE Input Combination of /RAS, /CAS, /WE defines basic commands.

A0-11 Input

for the following cycle is ceased. CKE is also used to select auto / self refresh. After self refresh mode is started, CKE becomes asynchronous

input. Self refresh is maintained as long as CKE is low.

A0-11 specify the Row / Column Address in conjunction with BA0,1. The Row Address is specified by A0-11. The Column Address is specified by A0-9 . A10 is also used to indicate precharge option. When

A10 is high at a read / write command, an auto precharge is performed. When A10 is high at a precharge command, all banks are precharged.

BA0,1 Input

DQ0-3 Input / Output Data In and Data out are referenced to the rising edge of CLK.

DQM Input

Vdd, Vss Power Supply Power Supply for the memory array and peripheral circuitry.

VddQ, VssQ Power Supply VddQ and VssQ are supplied to the Output Buffers only.

Bank Address: BA0,1 specifies one of four banks to which a command is applied. BA0,1 must be set with ACT, PRE, READ, WRITE commands.

Din Mask / Output Disable: When DQM is high in burst write, Din for the current cycle is masked. When DQM is high in burst read,

Dout is disabled at the next but one cycle.

MITSUBISHI ELECTRIC

MITSUBISHI LSIs

SDRAM (Rev.1.3)

Mar98

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

BASIC FUNCTIONS

The M5M4V64S20ATP provides basic functions, bank (row) activate, burst read / write, bank (row)

precharge, and auto / self refresh.

Each command is defined by control signals of /RAS, /CAS and /WE at CLK rising edge. In addition to 3

signals, /CS ,CKE and A10 are used as chip select, refresh option, and precharge option, respectively.

To know the detailed definition of commands, please see the command truth table.

CLK /CS /RAS /CAS /WE

CKE A10

Chip Select : L=select, H=deselect Command Command Command

Refresh Option @refresh command Precharge Option @precharge or read/write command

define basic commands

Activate (ACT) [/RAS =L, /CAS =/WE =H]

ACT command activates a row in an idle bank indicated by BA.

Read (READ) [/RAS =H, /CAS =L, /WE =H]

READ command starts burst read from the active bank indicated by BA. First output data appears after

/CAS latency. When A10 =H at this command, the bank is deactivated after the burst read (auto-precharge,

READA).

Write (WRITE) [/RAS =H, /CAS =/WE =L]

WRITE command starts burst write to the active bank indicated by BA. Total data length to be written is

set by burst length. When A10 =H at this command, the bank is deactivated after the burst write (autoprecharge, WRITEA).

Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]

PRE command deactivates the active bank indicated by BA. This command also terminates burst read /

write operation. When A10 =H at this command, both banks are deactivated (precharge all, PREA).

Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]

REFA command starts auto-refresh cycle. Refresh address including bank address are generated inter-

nally. After this command, the banks are precharged automatically.

MITSUBISHI ELECTRIC

SDRAM (Rev.1.3)

Mar98

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

COMMAND TRUTH TABLE

MITSUBISHI LSIs

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

COMMAND MNEMONIC

Deselect DESEL H X H X X X X X X X

No Operation NOP H X L H H H X X X X

Row Address Entry &

Bank Activate

Single Bank Precharge PRE H X L L H L V X L X

Precharge All Banks PREA H X L L H L X H X

Column Address Entry

& Write

Column Address Entry

& Write with Auto-

Precharge

Column Address Entry

& Read

Column Address Entry

& Read with Auto-

Precharge

Auto-Refresh REFA H H L L L H X X X X

Self-Refresh Entry REFS H L L L L H X X X X

ACT H X L L H H V V V V

WRITE H X L H L L V X L V

WRITEA H X L H L L V X H V

READ H X L H L H V X L V

READA H X L H L H V X H V

CKE

n-1

CKE

/CS /RAS /CAS /WE BA0,1 A11 A10 A0-9

Self-Refresh Exit REFSX

Burst Terminate TBST Mode Register Set MRS H X L L L L L L L V*1

H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number

NOTE:

1. A7-A9 =0, A0-A6 =Mode Address

L H H X X X X X X X L H L H H H X X X X

H X L

H H

X X X X

MITSUBISHI ELECTRIC

MITSUBISHI LSIs

SDRAM (Rev.1.3)

Mar98

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

FUNCTION TRUTH TABLE

Current State /CS /RAS /CAS /WE Address Command Action

IDLE H X X X X DESEL NOP

L H H H X NOP NOP L H H L BA TBST ILLEGAL*2

L H L X BA, CA, A10 READ / WRITE ILLEGAL*2 L L H H BA, RA ACT Bank Active, Latch RA L L H L BA, A10 PRE / PREA NOP*4 L L L H X REFA Auto-Refresh*5

L L L L

ROW ACTIVE H X X X X DESEL NOP

L H H H X NOP NOP

Op-Code, Mode-Add

MRS Mode Register Set*5

L H H L BA TBST NOP

L H L H BA, CA, A10 READ / READA

L H L L BA, CA, A10

L L H H BA, RA ACT Bank Active / ILLEGAL*2 L L H L BA, A10 PRE / PREA Precharge / Precharge All L L L H X REFA ILLEGAL

L L L L

READ H X X X X DESEL NOP (Continue Burst to END)

L H H H X NOP NOP (Continue Burst to END) L H H L BA TBST Terminate Burst

L H L H BA, CA, A10 READ / READA

L H L L BA, CA, A10

L L H H BA, RA ACT Bank Active / ILLEGAL*2

Op-Code, Mode-Add

WRITE /

WRITEA

MRS ILLEGAL

WRITE /

WRITEA

Begin Read, Latch CA, Determine Auto-Precharge

Begin Write, Latch CA, Determine Auto-Precharge

Terminate Burst, Latch CA, Begin New Read, Determine Auto-Precharge*3

Terminate Burst, Latch CA, Begin Write, Determine AutoPrecharge*3

L L H L BA, A10 PRE / PREA Terminate Burst, Precharge L L L H X REFA ILLEGAL

L L L L

Op-Code, Mode-Add

MRS ILLEGAL

MITSUBISHI ELECTRIC

MITSUBISHI LSIs

SDRAM (Rev.1.3)

Mar98

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

FUNCTION TRUTH TABLE(continued)

Current State /CS /RAS /CAS /WE Address Command Action

WRITE H X X X X DESEL NOP (Continue Burst to END)

L H H H X NOP NOP (Continue Burst to END) L H H L BA TBST Terminate Burst

Terminate Burst, Latch CA,

L H L H BA, CA, A10 READ / READA

Begin Read, Determine AutoPrecharge*3

READ with

AUTO

PRECHARGE

L H L L BA, CA, A10

L L H H BA, RA ACT Bank Active / ILLEGAL*2 L L H L BA, A10 PRE / PREA Terminate Burst, Precharge

L L L H X REFA ILLEGAL

L L L L

H X X X X DESEL NOP (Continue Burst to END) L H H H X NOP NOP (Continue Burst to END)

L H H L BA TBST ILLEGAL L H L H BA, CA, A10 READ / READA ILLEGAL

L H L L BA, CA, A10

L L H H BA, RA ACT Bank Active / ILLEGAL*2 L L H L BA, A10 PRE / PREA ILLEGAL*2

L L L H X REFA ILLEGAL L L L L

Op-Code, Mode-Add

WRITE /

WRITEA

MRS ILLEGAL

WRITE /

WRITEA

MRS ILLEGAL

Terminate Burst, Latch CA, Begin Write, Determine Auto-

Precharge*3

ILLEGAL

WRITE with

AUTO

PRECHARGE

H X X X X DESEL NOP (Continue Burst to END) L H H H X NOP NOP (Continue Burst to END)

L H H L BA TBST ILLEGAL L H L H BA, CA, A10 READ / READA ILLEGAL

L H L L BA, CA, A10

L L H H BA, RA ACT Bank Active / ILLEGAL*2 L L H L BA, A10 PRE / PREA ILLEGAL*2

L L L H X REFA ILLEGAL L L L L

Op-Code, Mode-Add

MITSUBISHI ELECTRIC

WRITE /

WRITEA

MRS ILLEGAL

ILLEGAL

SDRAM (Rev.1.3)

Mar98

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

FUNCTION TRUTH TABLE(continued)

Current State /CS /RAS /CAS /WE Address Command Action

MITSUBISHI LSIs

PRE -

CHARGING

ROW

ACTIVATING

H X X X X DESEL NOP (Idle after tRP)

L H H H X NOP NOP (Idle after tRP) L H H L BA TBST ILLEGAL*2

L H L X BA, CA, A10 READ / WRITE ILLEGAL*2 L L H H BA, RA ACT ILLEGAL*2 L L H L BA, A10 PRE / PREA NOP*4 (Idle after tRP) L L L H X REFA ILLEGAL

L L L L

H X X X X DESEL NOP (Row Active after tRCD)

L H H H X NOP NOP (Row Active after tRCD) L H H L BA TBST ILLEGAL*2 L H L X BA, CA, A10 READ / WRITE ILLEGAL*2

L L H H BA, RA ACT ILLEGAL*2 L L H L BA, A10 PRE / PREA ILLEGAL*2 L L L H X REFA ILLEGAL

L L L L

Op-Code, Mode-Add

MRS ILLEGAL

WRITE RECOVERING

H X X X X DESEL NOP

L H H H X NOP NOP L H H L BA TBST ILLEGAL*2 L H L X BA, CA, A10 READ / WRITE ILLEGAL*2 L L H H BA, RA ACT ILLEGAL*2 L L H L BA, A10 PRE / PREA ILLEGAL*2

L L L H X REFA ILLEGAL

L L L L

Op-Code, Mode-Add

MRS ILLEGAL

MITSUBISHI ELECTRIC

MITSUBISHI LSIs

SDRAM (Rev.1.3)

Mar98

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

FUNCTION TRUTH TABLE(continued)

Current State /CS /RAS /CAS /WE Address Command Action

RE-

FRESHING

MODE

SETTING

H X X X X DESEL NOP (Idle after tRC) L H H H X NOP NOP (Idle after tRC)

L H H L BA TBST ILLEGAL L H L X BA, CA, A10 READ / WRITE ILLEGAL L L H H BA, RA ACT ILLEGAL L L H L BA, A10 PRE / PREA ILLEGAL L L L H X REFA ILLEGAL

L L L L

H X X X X DESEL NOP (Idle after tRSC) L H H H X NOP NOP (Idle after tRSC) L H H L BA TBST ILLEGAL L H L X BA, CA, A10 READ / WRITE ILLEGAL

L L H H BA, RA ACT ILLEGAL L L H L BA, A10 PRE / PREA ILLEGAL L L L H X REFA ILLEGAL

L L L L

Op-Code, Mode-Add

MRS ILLEGAL

ABBREVIATIONS: H=High Level, L=Low Level, X=Don't Care BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No OPeration

NOTES:

1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.

2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of that bank.

3. Must satisfy bus contention, bus turn around, write recovery requirements.

4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.

5. ILLEGAL if any bank is not idle.

ILLEGAL = Device operation and/or data-integrity are not guaranteed.

MITSUBISHI ELECTRIC

SDRAM (Rev.1.3)

Mar98

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

FUNCTION TRUTH TABLE for CKE

MITSUBISHI LSIs

Current State

SELF-

REFRESH*1

POWER

DOWN

ALL BANKS

IDLE*2

CKE

n-1

H X X X X X X INVALID

L H H X X X X Exit Self-Refresh (Idle after tRC) L H L H H H X Exit Self-Refresh (Idle after tRC)

L H L H H L X ILLEGAL L H L H L X X ILLEGAL L H L L X X X ILLEGAL L L X X X X X NOP (Maintain Self-Refresh)

H X X X X X X INVALID

L H X X X X X Exit Power Down to Idle

L L X X X X X NOP (Maintain Self-Refresh) H H X X X X X Refer to Function Truth Table H L L L L H X Enter Self-Refresh

H L H X X X X Enter Power Down H L L H H H X Enter Power Down H L L H H L X ILLEGAL

/CS /RAS /CAS /WE Add Action

H L L H L X X ILLEGAL H L L L X X X ILLEGAL

L X X X X X X Refer to Current State =Power Down

ANY STATE

other than

listed above

ABBREVIATIONS: H=High Level, L=Low Level, X=Don't Care

NOTES:

1. CKE Low to High transition will re-enable CLK and other inputsasynchronously. A minimum setup time must be satisfied before any command other than EXIT.

2. Power-Down and Self-Refresh can be entered only from the All Banks Idle State.

3. Must be legal command.

H H X X X X X Refer to Function Truth Table H L X X X X X Begin CLK Suspend at Next Cycle*3

L H X X X X X Exit CLK Suspend at Next Cycle*3 L L X X X X X Maintain CLK Suspend

MITSUBISHI ELECTRIC

SDRAM (Rev.1.3)

Mar98

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

SIMPLIFIED STATE DIAGRAM

MITSUBISHI LSIs

SELF

REFRESH

REFS

REFSX

WRITE

SUSPEND

MODE

MRS

SET

CLK

SUSPEND

CKEH

TBST (for Full Page)

WRITE READ

CKEL

WRITE

CKEH

CKEL

ROW

ACTIVE

WRITEA

WRITE

IDLE

ACT

READA

READ

REFA

CKEL

CKEH

TBST (for Full Page)

READ

AUTO

REFRESH

POWER

DOWN

CKEL

READ

SUSPEND

CKEH

WRITEA

SUSPEND

POWER APPLIED

WRITEA READA

CKEL

CKEH

POWER

WRITEA

PRE PRE

PRE

CHARGE

PRE

READA

MITSUBISHI ELECTRIC

CKEL

READA

SUSPEND

CKEH

Automatic Sequence Command Sequence

MITSUBISHI LSIs

SDRAM (Rev.1.3)

Mar98

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

POWER ON SEQUENCE

Before starting normal operation, the following power on sequence is necessary to prevent a SDRAM

from damaged or malfunctioning.

1. Apply power and start clock. Attempt to maintain CKE high, DQM high and NOP condition at the inputs.

2. Maintain stable power, stable clock, and NOP input conditions for a minimum of 200µs.

3. Issue precharge commands for all banks. (PRE or PREA)

4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.

5. Issue a mode register set command to initialize the mode register.

After these sequence, the SDRAM is idle state and ready for normal operation.

MODE REGISTER

Burst Length, Burst Type and /CAS Latency can be programmed by setting the mode register (MRS). The mode register stores these data until the next MRS command, which may be issued when both banks

are inÅ@idle state. After tRSC from a MRS command, the SDRAM is ready for new command.

A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0BA1BA0

LATENCY

MODE

0 0 0 0 0 1

0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1

0 0

/CAS LATENCY

0 0

R R

2 3 R R R R

LTMODE BT BL

BURST

LENGTH

CLK /CS /RAS /CAS /WE

BA0,1 A11-A0

0 0 0 0 0 1 0 1 0 0 1 1 1 0 0

1 0 1 1 1 0 1 1 1

BT= 0 BT= 1

1 2 4 8 R

R R

1 2 4 8 R

R R R

WRITE

MODE

BURST

SINGLE BIT

BURST

TYPE

R: Reserved for Future Use

FP: Full Page

MITSUBISHI ELECTRIC

SEQUENTIAL INTERLEAVED

SDRAM (Rev.1.3)

Mar98

CLK

MITSUBISHI LSIs

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

Command

Address

CL= 3 BL= 4

Initial Address BL

A2 A1 A0

0 0 0 0 0 1 0 1 0 0 1 1

1 0 0

Read

Q0 Q1 Q2 Q3

/CAS Latency Burst Length Burst Length

Burst Type

Column Addressing

Sequential Interleaved

0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 1 2 3 4 5 6 7 0 1 0 3 2 5 4 7 6 2 3 4 5 6 7 0 1 2 3 0 1 6 7 4 5 3 4 5 6 7 0 1 2 3 2 1 0 7 6 5 4

4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3

Write

D0 D1 D2 D3

1 0 1 1 1 0

1 1 1

- 0 0

- 0 1

- 1 0

- 1 1

- - 0

- - 1

5 6 7 0 1 2 3 4 5 4 7 6 1 0 3 2 6 7 0 1 2 3 4 5 6 7 4 5 2 3 0 1

7 0 1 2 0 1 2 3 1 2 3 0

2 3 0 1 3 0 0 1

1 0

3 4 5 6 3 2 1 0

1 2

7 6 5 4 0 1 2 3 1 0 3 2

2 3 0 1 3 2 0 1

1 0

MITSUBISHI ELECTRIC

SDRAM (Rev.1.3)

Mar98

[ /CAS LATENCY ]

/CAS latency, CL, is used to synchronize the first output data with the CLK frequency, i.e., the speed of CLK determines which CL should be used. First output data is available after CL cycles from READ command.

/CAS Latency Timing(BL=4)

CLK

MITSUBISHI LSIs

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

Command

Address

DQ Q0 Q1 Q2 Q3

ACT READ

tRCD

CL=2

CL=3

[ BURST LENGTH ]

The burst length, BL, determines the number of consecutive writes or reads that will be automatically performed after the initial write or read command. For BL=1,2,4,8, the output data is tristated (Hi-Z) after the last read. For BL=FP (Full Page), the TBST (Burst Terminate) command must be used to stop the output of data.

Burst Length Timing( CL=2 )

tRCD

CLK

CL=2

CL=3

Command

Address

DQ Q0 DQ Q0 Q1 DQ Q0 Q1 Q2 Q3 DQ Q0 Q1 Q2 Q3

DQ Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 Q8 Qm Q0 Q1

ACT

X Y

READ

Q4 Q5 Q6 Q7

M5M4V64S20A : m=1023 M5M4V64S30A : m=511 M5M4V64S40A : m=255

Full Page counter rolls over and continues to count.

MITSUBISHI ELECTRIC

BL=1 BL=2

BL=4 BL=8 BL=FP

MITSUBISHI LSIs

SDRAM (Rev.1.3)

Mar98

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

OPERATIONAL DESCRIPTION

BANK ACTIVATE

The SDRAM has four independent banks. Each bank is activated by the ACT command with the bank addresses (BA0,1). A row is indicated by the row addresses A11-0. The minimum activation interval between one bank and the other bank is tRRD.Maximum 2 ACT commands are allowed within tRC, although the number of banks which are active concurrently is not limited.

PRECHARGE

The PRE command deactivates the bank indicated by BA0,1. When multiple banks are active, the precharge

all command (PREA, PRE + A10=H) is available to deactivate them at the same time. After tRP from the precharge, an ACT command to the same bank can be issued.

Bank Activation and Precharge All (BL=4, CL=3)

CLK

2 ACT command / tRCmin

tRCmin

Command

A0-9

A10

A11 Xa Xb Xb

BA0,1

ACT

tRRD

tRCD

ACT

READ

PRE

tRAS tRP

Qa0 Qa1 Qa2 Qa3

Precharge all

ACT

READ

After tRCD from the bank activation, a READ command can be issued. 1st output data is available after the /CAS Latency from the READ, followed by (BL -1) consecutive data when the Burst Length is BL. The start address is specified by A8-0(X8), A9-0(X4) and the address sequence of burst data is defined by the Burst Type. A READ command may be applied to any active bank, so the row precharge time (tRP) can be hidden behind continuous output data by interleaving the multiple banks. When A10 is high at a READ command, the auto-precharge (READA) is performed. Any command (READ, WRITE, PRE, ACT) to the same bank is inhibited till the internal precharge is complete. The internal precharge starts at BL after READA. The next ACT command can be issued after (BL + tRP) from the previous READA.

MITSUBISHI ELECTRIC

SDRAM (Rev.1.3)

Mar98

CLK

MITSUBISHI LSIs

M5M4V64S20ATP-8A,-8L,-8, -10L, -10

64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

Multi Bank Interleaving READ (BL=4, CL=3)

Command

A0-9

A10

ACT

tRCD

A11 Xa Xb

BA0,1

READ with Auto-Precharge (BL=4, CL=3)

CLK

Command

A0-9

ACT

tRCD tRP

READ

ACT

/CAS latency

READ

Qa0 Qa1 Qa2 Qa3 Qb0 Qb1 Qb2

Burst Length

BL + tRP

PRE

ACT

A10

A11

BA0,1

CLK

Command

CL=3

CL=2

Xa Xa

Qa0 Qa1 Qa2 Qa3

Internal precharge start

READ Auto-Precharge Timing (BL=4)

ACT READ

Qa1 Qa2 Qa3Qa0

Internal Precharge Start Timing

MITSUBISHI ELECTRIC

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