MITSUBISHI BA01232 User Manual

MITSUBISHI SEMICONDUCTOR

1.2

Preliminary BA01232

Specifications are subject to change without notice. HBT HYBRID IC

DESCRIPTION

The BA01232 is GaAs RF amplifier designed for

W-CDMA hand-held phone.

OUTLINE DRAWING

①

FEATURES

Low voltage Vcc=3.5V
High power Po=26.5dBm @1920∼1980MHz
High gain Gp=27.5dB @Po=26.5dBm
2stage amplifier
Internal input and output matching
Small size package 4x4x1.2mm

②

③ ④

4.00 1.40

APPLICATION

W-CDMA(UTRA/FDD) mobile transmitter
(UE Power Class 3).

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Symbol

Parameter Condition Ratings* Unit

Vcc Supply voltage of HPA 6 V

Pin Input power ZG=ZL=50Ω 7 dBm

Tc(op)

Operating case temp. -20 ∼ +85 °C

Unit : millimeters

⑥

⑤

①Pin

②Vc1

③Vc2

4.00

④Pout

⑤Vcb

⑥Vref

Tstg Storage temp. -30 ∼ +95 °C

*Note : Each maximum rating is guaranteed independently .

ELECTRICAL CHARACTERISTICS(Ta=25°C)

Symbol

Parameter

Test conditions**

f Frequency 1920

Limits

MIN TYP MAX

1980 MHz

Icqt Idle current No RF input 35 mA

Ict Total current 252 mA

PAE Power added efficiency 50 %

Pin Input Power -1.0 dBm

ρin Return loss -6 dB

Adjacent channel leakage power

at 5MHz

ACLR

Adjacent channel leakage power

at 10MHz

2Sp/3Sp

2nd/3rd harmonics -30 dBc

Po=26.5dBm

Vc1=Vc2=3.5V

Vref=2.9V

Vcb=2.9V

-41 -38 dBc

-54 -48 dBc

Unit

RX noise

RX band noise

-140

dBm/Hz

**NOTE : ZG=ZL=50Ω

3.84Mcps spreading, HPSK.

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility
that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.

MITSUBISHI ELECTRIC CORP.

Feb.,04